SI4501DY Search Results
SI4501DY Price and Stock
Vishay Intertechnologies SI4501DY-T1-E3 |
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SI4501DY-T1-E3 | 2,315 |
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Vishay Intertechnologies SI4501DY-T1TRANSISTOR,MOSFET,HALF BRIDGE,COMPLEMENTARY,30V V(BR)DSS,9A I(D),SO |
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SI4501DY-T1 | 2,000 |
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Vishay Siliconix SI4501DY-T1TRANSISTOR,MOSFET,HALF BRIDGE,COMPLEMENTARY,30V V(BR)DSS,9A I(D),SO |
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SI4501DY-T1 | 1,040 |
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Vishay Intertechnologies SI4501DYTRANSISTOR,MOSFET,HALF BRIDGE,COMPLEMENTARY,30V V(BR)DSS,9A I(D),SO |
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SI4501DY | 50 |
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Vishay Siliconix SI4501DYTRANSISTOR,MOSFET,HALF BRIDGE,COMPLEMENTARY,30V V(BR)DSS,9A I(D),SO |
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SI4501DY | 29 |
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SI4501DY Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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Si4501DY | Vishay Intertechnology | Complementary MOSFET Half-Bridge (N- and P-Channel) | Original | |||
SI4501DY | Vishay Siliconix | Complementary MOSFET Half-Bridge (N- and P-Channel) | Original | |||
Si4501DY SPICE Device Model |
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Complementary MOSFET Half-Bridge (N- and P-Channel) | Original |
SI4501DY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si4501DY
Abstract: Si4501DY-T1-E3
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Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 11-Mar-11 | |
Si4501DY
Abstract: Si4501ADY Si4501ADY-T1
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Si4501ADY Si4501DY Si4501ADY--E3 Si4501ADY-T1 Si4501DY-T1 Si4501ADY-T1--E3 | |
Si4501DY
Abstract: Si4501ADY Si4501ADY-T1 SI4501DY-T1
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Si4501ADY Si4501DY Si4501ADY-E3 Si4501ADY-T1 Si4501DY-T1 Si4501ADY-T1-E3 | |
SI4501DY-T1-E3Contextual Info: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2 |
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Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si4501DYContextual Info: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N Channel N-Channel 30 P Channel P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = - 4.5 V "6.2 0.060 @ VGS = - 2.5 V |
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Si4501DY S-61812--Rev. 19-Jul-99 | |
Si4501DY
Abstract: si4501
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Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 18-Jul-08 si4501 | |
Si4501DYContextual Info: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = –4.5 V "6.2 0.060 @ VGS = –2.5 V |
Original |
Si4501DY S-61812--Rev. 19-Jul-99 | |
Si4501DYContextual Info: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = –4.5 V "6.2 0.060 @ VGS = –2.5 V |
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Si4501DY S-61812--Rev. 19-Jul-99 | |
Si4501DYContextual Info: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2 Pb-free |
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Si4501DY Si4501DY-T1 Si4501DY-T1-E3 18-Jul-08 | |
Si4501DY
Abstract: 71461
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Si4501DY 07-May-01 71461 | |
Contextual Info: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 RDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2 |
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Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si4501DYContextual Info: SPICE Device Model Si4501DY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4501DY 18-Jul-08 | |
Si4501DYContextual Info: Si4501DY Vishay Siliconix Complementary MOSFET N- and P-Channel PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V ±9 0.027 at VGS = 4.5 V ± 7.4 0.042 at VGS = - 4.5 V ± 6.2 0.060 at VGS = - 2.5 V ± 5.2 Pb-free |
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Si4501DY Si4501DY-T1 Si4501DY-T1-E3 08-Apr-05 | |
Si4501DYContextual Info: Si4501DY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY VDS (V) N Channel N-Channel 30 P Channel P-Channel -8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9 0.027 @ VGS = 4.5 V "7.4 0.042 @ VGS = - 4.5 V "6.2 0.060 @ VGS = - 2.5 V |
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Si4501DY 08-Apr-05 | |
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 | |
power supply ATX12v SCHEMATICS
Abstract: n82802ac8 2100C888 transistor b1099 intel 845g chipset motherboard layout b1099 power supply ATX12v SERVICE MANUAL MBT3904DUAL pc motherboard schematics intel 82801db ich4 intel 82845g chipset motherboard layout
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845GV UDMA100 power supply ATX12v SCHEMATICS n82802ac8 2100C888 transistor b1099 intel 845g chipset motherboard layout b1099 power supply ATX12v SERVICE MANUAL MBT3904DUAL pc motherboard schematics intel 82801db ich4 intel 82845g chipset motherboard layout |