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    200B103 Price and Stock

    Kyocera AVX Components 200B103KT50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103KT50XT1K Digi-Reel 5,719 1
    • 1 $8.66
    • 10 $6.017
    • 100 $4.6125
    • 1000 $4.04104
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    200B103KT50XT1K Cut Tape 5,719 1
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    200B103KT50XT1K Reel 5,000 1,000
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    Avnet Americas 200B103KT50XT1K Tape w/Leader 24 Weeks 1,000
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    Mouser Electronics 200B103KT50XT1K
    • 1 $4.17
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    Richardson RFPD 200B103KT50XT1K 1,000
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    Kyocera AVX Components 200B103KTN50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103KTN50XT1K Cut Tape 3,888 1
    • 1 $6.57
    • 10 $4.493
    • 100 $3.3886
    • 1000 $2.93968
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    200B103KTN50XT1K Digi-Reel 3,888 1
    • 1 $6.57
    • 10 $4.493
    • 100 $3.3886
    • 1000 $2.93968
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    200B103KTN50XT1K Reel 2,000 1,000
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    Avnet Americas 200B103KTN50XT1K Tape w/Leader 24 Weeks 1,000
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    Mouser Electronics 200B103KTN50XT1K
    • 1 $5.55
    • 10 $4.26
    • 100 $3.2
    • 1000 $2.6
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    Richardson RFPD 200B103KTN50XT1K 1,000
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    • 1000 $2.48
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    Kyocera AVX Components 200B103MT50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103MT50XT1K Digi-Reel 2,747 1
    • 1 $6.37
    • 10 $4.348
    • 100 $3.2734
    • 1000 $2.83654
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    200B103MT50XT1K Cut Tape 2,747 1
    • 1 $6.37
    • 10 $4.348
    • 100 $3.2734
    • 1000 $2.83654
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    200B103MT50XT1K Reel 2,000 1,000
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    Richardson RFPD 200B103MT50XT1K 1,000
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    • 10000 $1.76
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    Kyocera AVX Components 200B103MW50XT1K

    CAP CER 10000PF 50V BX 1111
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    DigiKey 200B103MW50XT1K Cut Tape 1,220 1
    • 1 $5.36
    • 10 $3.624
    • 100 $2.7004
    • 1000 $2.32502
    • 10000 $2.32502
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    200B103MW50XT1K Digi-Reel 1,220 1
    • 1 $5.36
    • 10 $3.624
    • 100 $2.7004
    • 1000 $2.32502
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    200B103MW50XT1K Reel 1,000 1,000
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    Kyocera AVX Components 200B103NW50XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 200B103NW50XTV)
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    Avnet Americas 200B103NW50XTV Tape w/Leader 24 Weeks 500
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    Find more 200B103 price and stock on Findchips.com

    200B103 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    200B103KT50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103KT50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B103KTN50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103KTN50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B103MT50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103MT50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF
    200B103MW50XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10000PF 50V BX 1111 Original PDF
    200B103MW50XT1K American Technical Ceramics Ceramic Capacitor 10000PF 50V BX 1111 Original PDF

    200B103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


    Original     		PDF TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener

    TB222

    Abstract: PH smd transistor PH
    Text: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W


    Original     		PDF TB222A 1-1000MHz 48Vdc GX141 2N1893 U5305 MAX881 100nF MIC7300 TB222 PH smd transistor PH

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    TB223

    Abstract: amidon BN-61-202
    Text: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A


    Original     		PDF TB223 20-35MHz 24Vdc L2701 TB223 24Vdc, 17-turn, 850mu amidon BN-61-202

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6

    TAJE226M035

    Abstract: 200B103MW
    Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 TAJE226M035 200B103MW

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    A211801E

    Abstract: 200B103 LM7805 PTFA211801E
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F 180-watt, 2140dangerous A211801E 200B103 LM7805

    rogers

    Abstract: No abstract text available
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 rogers

    marking Z4

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TB200

    Abstract: amidon BN-61-202 c12 ph zener diode
    Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200


    Original     		PDF TB200 20-1000MHz LB401 TB200 28Vdc, 20Mhz 200B104KW50X 100B100GW500X amidon BN-61-202 c12 ph zener diode

    TB224

    Abstract: D02BZ2 Amidon ferrite
    Text: October 31, 2012 TB224 Frequency=30-512MHz Pout=1.5W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=13-18% SP201 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com October 31, 2012 TB224 Pout/Gain vs Pin: Freq=30MHz, Vds=28Vdc, Idq=0.2A


    Original     		PDF TB224 30-512MHz 28Vdc SP201 TB224 30MHz, 28Vdc, 250MHz, D02BZ2 Amidon ferrite

    210451

    Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 210451 smd marking f2 smd transistor marking l6 BDS31314 PTF210451E

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 MRF5P20180HR6

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    Untitled

    Abstract: No abstract text available
    Text: PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA211801E PTFA211801E 180-watt, H-36260-2

    PTFA211801E

    Abstract: a211 BCP56 LM7805 PTFA211801F
    Text: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA211801E PTFA211801F PTFA211801E PTFA211801F 180-watt, a211 BCP56 LM7805

    PTF210451E

    Abstract: PTF210451F 200B1
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1

    200B

    Abstract: AN1955 MRF5P20180HR6
    Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5P20180HR6 200B AN1955 MRF5P20180HR6

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F 45-watt PTF210451F*