20090209C Search Results

Contextual Info: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode

IXKH35N60C5

Contextual Info: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings

13n60c

Abstract: 13n60
Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS

Contextual Info: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings

Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings

10N60C

Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS

E72873

Contextual Info: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode