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IXYS Corporation IXKP10N60C5 MOSFET N-CH 600V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKP10N60C5	Tube			50	1 - 10 - 100 $1.8528 1000 $1.8528 10000 $1.8528	Buy Now
IXYS Corporation IXKP10N60C5M MOSFET N-CH 600V 5.4A TO220ABFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKP10N60C5M	Tube			50	1 - 10 - 100 $1.8528 1000 $1.8528 10000 $1.8528	Buy Now

10N60C5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
10N60C5M		IXYS	CoolMOS Power MOSFET		Original	PDF

10N60C5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220	PDF
10N60C Abstract: IXKP10N60C5 Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080523b 10N60C IXKP10N60C5	PDF
Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20090209d	PDF
10N60C Abstract: GS54 Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET	Original	10N60C5M O-220 20070704a9 10N60C GS54	PDF
Contextual Info: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080310a	PDF
10N60C Abstract: c16tj 10N60C5M Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M	PDF
10N60C Contextual Info: IXKP 10N60C5 Advanced Technical Information ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220 10N60C	PDF
Contextual Info: IXKP 10N60C5M COOLMOS * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20080310b	PDF
Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	10N60C5 O-220 20090209c	PDF
10N60C5M Abstract: kw0649 IGBT GS c16tj 10N60C Contextual Info: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions	Original	10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C	PDF
10N60C Abstract: C3525 Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET	Original	10N60C5M O-220 10N60C C3525	PDF
10N60C Contextual Info: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220 10N60C	PDF
10N60C Abstract: 10N60C5M Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20090209d 10N60C 10N60C5M	PDF
10N60C Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20090209c 10N60C	PDF

7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF