13N60C Search Results
13N60C Price and Stock
IXYS Corporation IXKP13N60C5MOSFET N-CH 600V 13A TO220AB |
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IXKP13N60C5 | Tube |
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IXYS Corporation IXKP13N60C5MMOSFET N-CH 600V 6.5A TO220ABFP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXKP13N60C5M | Tube | 50 |
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IXKP13N60C5M | 450 | 1 |
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13N60C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
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13N60C5M O-220 20080310b | |
13n60c
Abstract: 13n60
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13N60C5 O-220 20090209c 13n60c 13n60 | |
MA660Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
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13N60C5M O-220 MA660 | |
Contextual Info: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol |
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13N60C5 O-247 O-220 20080310a | |
13n60c
Abstract: 13N60
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13N60C5M O-220 20090209d 13n60c 13N60 | |
13N60
Abstract: 13N60C5M
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13N60C5M O-220 20080523c 13N60 13N60C5M | |
13N60C5
Abstract: 13N60 13n60c
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13N60C5 13N60C5 O-247 O-220 13N60 13n60c | |
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol |
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13N60C5M O-220 20070704a | |
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions |
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13N60C5M O-220 | |
Contextual Info: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
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13N60C5M O-220 | |
Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
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13N60C5M O-220 20090209d | |
13N60
Abstract: 13n60c5 13n60c L-14045
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13N60C5 O-220 20080523b 13N60 13n60c5 13n60c L-14045 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 |