Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    200 AMPERE TRANSISTOR Search Results

    200 AMPERE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    200 AMPERE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original     		PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    MJL3281A MJL1302A

    Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original     		PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    MJ3281A

    Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
    Text: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS


    Original     		PDF MJ3281A/D MJ3281A* MJ1302A* MJ3281A MJ1302A 204AA MJ3281A/D* Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor

    CHM640NGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CHM640NGP CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK


    Original     		PDF CHM640NGP CHM640NGP

    CHM630PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM630PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM630PAGP O-252) CHM630PAGP

    CHT2000ZGP

    Abstract: cht2000
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2000ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 200 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT2000ZGP SC-73/SOT-223 100uA; 160mA; 100uA 160mA CHT2000ZGP cht2000

    160MA

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2000ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 200 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. SC-73/SOT-223


    Original     		PDF CHT2000ZPT SC-73/SOT-223 100uA; 160mA; 100uA 160mA 160MA

    MJ10021 equivalent

    Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
    Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for


    Original     		PDF MJ10020 MJ10021 MJ10020 MJ10021 r14525 MJ10020/D MJ10021 equivalent SUS CIRCUIT 1N4937 tektronix 475

    200 ampere MOSFET datasheet

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM630PAPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original     		PDF CHM630PAPT O-252A O-252A) 200 ampere MOSFET datasheet

    TIP36

    Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —


    Original     		PDF MJ410 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP36 BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364

    MJ410

    Abstract: NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes
    Text: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.


    Original     		PDF MJ410/D* MJ410/D MJ410 NPN 200 VOLTS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR transistor 400 volts.50 amperes

    mje15033 replacement

    Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.


    Original     		PDF MJE341 MJE344 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje15033 replacement BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100

    2n6031

    Abstract: No abstract text available
    Text: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.


    Original     		PDF 2N6031 200mA 500kHz 100kHz 27-August

    1N4937

    Abstract: MJ10020 MJ10021 AN222A
    Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS


    Original     		PDF 204AE 1N4937 MJ10020 MJ10021 AN222A

    BU806

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    Original     		PDF 220AB BU806

    1N4937

    Abstract: MJ10020 MJ10021
    Text: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS


    Original     		PDF MJ10020/D* MJ10020/D 1N4937 MJ10020 MJ10021

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJ4502 High−Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


    Original     		PDF MJ4502 100-Watts MJ802

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326

    BIPOLAR M 846

    Abstract: 0/JL3281A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IIP II M JL3281A* Designer's Data Sheet PNP M JL1302A* Com plem entary NPN-PNP Silicon Power Bipolar Transistor *M o torcia Preferred Devio* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    OCR Scan     		PDF JL3281A* JL1302A* MJL3281A MJL1302A BIPOLAR M 846 0/JL3281A

    MJ410

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.


    OCR Scan     		PDF MJ410/D MJ410 O-204AA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    OCR Scan     		PDF BU806/D BU806 -220A 21A-06 O-220AB

    mje341

    Abstract: MJE-344 mje344
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium -Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high f f such as converters and extended range amplifiers.


    OCR Scan     		PDF MJE341 MJE344 MJE344 -225AA MJE-344

    MP3731

    Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
    Text: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed


    OCR Scan     		PDF MP2100A, MP2200A, MP2300A, MP2400A MP2000A MP3730 MP3731 MP3730 MP3731 MP2200A O446 Motorola germanium transistor pnp MP2100A MP2300A MP2400A germanium transistors PNP