Untitled
Abstract: No abstract text available
Text: 25C D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 -SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2 2 1 8 ,2 N 2 2 1 9 ,2 N 2 2 1 8 A, and 2 N 2 2 1 9 A a re epitaxial NPN silicon Planartransistors
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OCR Scan
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IM2219
fl23SbOS
102mA
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PDF
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2sk303
Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4
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OCR Scan
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2SA1256
2SA1343
2SA1655
2SK2167
2SK2168
2SK2170
2SK2171
2SK2260
2SK2218
2SK2219
2sk303
2SK283
sk184
SK174
2SK436
2SK848
P/N146071
2sd22
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PDF
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Untitled
Abstract: No abstract text available
Text: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec
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OCR Scan
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2N2218A,
2N2219A,
2N2221A
2N2222A
2N2218A
2N2219A)
2N2222A)
2N2218A/2N2219A
2N2221A/2N2222A
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PDF
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N2222A
Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
Text: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec
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OCR Scan
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2N2218A,
2N2219A,
2N2221A
2N2222A
2N2218A
2N2219A)
2N2222A)
2N2218A/2N2219A
2N2221A/2N2222A
N2222A
PW 2N
218A
n2222a2
2N2219A
ip 2222A
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PDF
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transistor array high frequency
Abstract: hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203
Text: Amplifiers/Buffers 2 A NALOG S IGNAL P ROCESSING Low Power pg. 2-27 Transistor Arrays (pg. 2-41) Bandwidth >1GHz (pg. 2-2) VOS <25µV (pg. 2-15) IS <10µA (pg. 2-27) UHF NPN Only (pg. 2-41) Bandwidth >500MHz (pg. 2-2) VOS <100µV (pg. 2-15) IS <100µA
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Original
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500MHz
100MHz
10MHz
HA-4900
HA-4902
HA-4905
150nA,
200nA,
180ns
transistor array high frequency
hfa11001
transistor 2620 SOT-23
EL5308
CA3083 receiver
EL5611
EL8188
EL8203
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PDF
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A 933 S transistors
Abstract: N 2222 2N222 2221-2N TE 2221
Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors
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OCR Scan
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CK886
A 933 S transistors
N 2222
2N222
2221-2N
TE 2221
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PDF
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RXT2907A
Abstract: marking R2F MMST2907A PN2907A SST2907A T106 T110 UMT2907A transistor Marking code t03 Part marking SC70 bc
Text: Transistors PNP Medium Power Transistor Switching i UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A 0 F e a tu re s # E x te rn a l dimensions (Units : mm) 1 ) B V ceo C —4 0 V ( l c = — 10m A ) UMT2907A 2 ) C o m p le m e n ts the U M T 2 2 2 2 A /S S T 2 2 2 2 A /M M S T 2 2 2 2 A /
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OCR Scan
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UMT2907A
SST2907A/MMST2907A
RXT2907A
PN2907A
UMT2Z2ZA/SST2222A/MMST2222
RXT2222A/PN2222A.
SST2907A
MMST2907A
marking R2F
PN2907A
T106
T110
transistor Marking code t03
Part marking SC70 bc
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PDF
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A 933 S transistors
Abstract: br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573
Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 D NPN Silicon Planar Transistors 2 N 2220 2 N 2221 2 N 2222 'S IE M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41 8 7 6 . The collector is electrically connected to the case. The transistors
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OCR Scan
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623SbOS
CK886
Q68000-A4573
Q62702-F134
Q62702-F135
A 933 S transistors
br 2222 npn
npn 2222
N 2222
2221-2N
2N2222
2N2221
Q62702-F134
Q62702-F135
Q68000-A4573
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PDF
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B0415
Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2
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OCR Scan
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BD239
O-220
BD240
BD239A
BD240A
BD239B
BD240B
BD240
B0415
b0416
B0633
b0636
MH8106
B0635
BD415
BD416
BD417
b063
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PDF
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d1189f
Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Text: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)
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OCR Scan
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2SB1188
2SB1182
2SB1188)
2SB1182)
2SB891)
2SB1188/2SB1182/2SB1240/2SB891F/
2SB822/2SB1277/2SB911M
2SB891
d1189f
2SB891
d1758
2SB891F
2sb1188
2sb1277
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i= 2 2 k i2 , R 2= 2 2 k iì TT UT Pin Configuration W Ds 1 = B II CO Q 6 2 7 0 2 -C 2 2 8 8 Package o Marking Ordering Code
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OCR Scan
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833SbDS
fl23Sb05
012074E
Q12G743
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PDF
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E6327
Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!
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Original
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OT-343
O-220-3-1
O-220-2-2
OT-89
OT-23
OT-23
OT-89
OT-343
SC-74
SC-79
E6327
transistor bc 588
transistor bc 855
BAV99E6327
BGX50AINCT-ND
BAS70E6327
BC 194 TRANSISTORS
BC847A-E6327
smbd7000E6327
BAV199E6327
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PDF
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2n6700
Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA
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OCR Scan
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2N6700
2N6714
2N6726
2N6715
2N6727
2N6724
2N6725
2N6716
2N6728
2N6717
2N6718
2N6729
2N6724
2N6725
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PDF
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Untitled
Abstract: No abstract text available
Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5 + /- . + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2
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Original
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PDF
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2sc2275
Abstract: 2SC2275A 2sC985 2SA985 25A98 2SC985A
Text: 2 S A 9 8 5 ,9 8 5 A 2 S C 2 2 7 5 ,2 2 7 5 A 2 S A 9 8 5 ,9 8 5 A /2 S C 2 2 7 5 ,2 2 7 5 A PNP/NPNi e 9 P N P /N P N Silicon Epitaxial Transistor Audio Frequency P ow er A m plifier. '> • = 1 > t High Froquency P ow er Am plifier FEATURES « • » 0 /P A C K A G E DIMENSIONS
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OCR Scan
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2SA985
2SC985A
2SC2275
2SC2275A
2SA985A
75/2SC2275A
2SA985.
2SA985A/2SC2275,
2SC2275A
2sc2275
2sC985
2SA985
25A98
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 141S NPN Silicon Digital Transistor Array ►Switching circuit, inverter, interface, driver circuit • T w o galvanic internal isolated Transistors in on e package > Built in bias resistor (R -|= 2 2 k il, R 2= 2 2 k fl) W Ds Q 6 2 7 0 2 -C 2 4 1 6
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OCR Scan
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PDF
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2sb526
Abstract: 2SB529 2SC789 2SA816 2SD331 2SB513A 2SB514 2SB515 2SB523 2SB566AK
Text: Power Transistors TYPE NO. IC mA VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE MENTARY TYPE # # ft ft ft 1 1 1 0.5 0.3 3 2 2 4 4 1 1 1 2 1 2 2 2 1.5 0.3 8+ 8+ - 2SD366A 2SD330 2SD331 - ft 4 4 5 2 4 1 1 1.5 1.4 10 1.5 1 3 2 2 - - # # # 0.5 1 0.5 0.5
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OCR Scan
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2SB513A
O-220
2SD366A
2SB514
2SD330
2SB515
2SD331
2SB523
2sb526
2SB529
2SC789
2SA816
2SD331
2SB566AK
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PDF
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP T 2 9347963 D F | ^ 3 4 7 c] b 3 U N I T R O D E CORP 92D 10624 POWER MOSFET TRANSISTORS D G lG b S M D U F N 2 2 0 U F N 2 2 1 200 Volt, 0.8 Ohm N-Channel U F N 2 2 2 U F N 2 2 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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OCR Scan
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UFN220
UFN221
UFN222
UFN223
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PDF
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2m2222
Abstract: 2N2222 2N2222Metal 2N2221 2221 2N 2222 2221-2N 222-1 2N2218 br 2222 npn
Text: 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN • 2222 H IG H - S P E E D S W IT C H E S The 2N 2 2 1 8 , 2N Jedec T O -3 9 fo r m etal cases. T he y to 5 0 0 m A , and 2 2 1 9 , 2N 2221 and 2N 2 2 2 2 are silico n p lanar e p ita xia l NPN transistors in 2 N 2 2 1 8 and 2N 2 2 1 9 and in Jedec T C I-1 8 ( fo r 2N 2221 and 2N 2222)
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OCR Scan
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PDF
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VP0300M
Abstract: VP0300B
Text: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2
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OCR Scan
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VP0300B/L/M,
VQ2001J/P
VP0300B
VP0300L
VP0300M
VQ2001J
VQ2001P
P-38283--
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PDF
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N2219
Abstract: 2N2219 F133 2N2218 2N2218A Q62702-F109 Q62702-F133 Q62702-F59 Q62702-S29 siemens 2218
Text: 2SC D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 - SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2218,2 N 2219,2 N 2218 A, and 2 N 2219 Aare epitaxial NPN silicon Planartransistors
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OCR Scan
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AKTIENGESELLSCHAF-2N2218A
Q62702-F109
Q62702-F133
Q62702-S29
Q62702-F59
2N2218
2N2219
fl235J
/cc-30
102mA
N2219
F133
2N2218A
Q62702-F59
siemens 2218
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PDF
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2sb1569a
Abstract: No abstract text available
Text: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )
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OCR Scan
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2SB1275
2SB1236A
2SB1569A
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E
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OCR Scan
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s2502L1V
PS2502L-1
PS2502L-2
PS2502L-4
b427525
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PDF
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2SD1189F
Abstract: 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M
Text: Transistors Medium Power Transistor 32V, 2A 2 S D 1 7 6 6 /2 S D 1 7 5 8 /2 S D 1 8 6 2 /2 S D 1 1 8 9 F / 2 S D 1 0 5 5 /2 S D 1 9 1 9 /2 S D 1 2 2 7 M •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0.16V (Typ.) 2SD1766
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OCR Scan
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2SD1766/2SD1758/2SD1862/2SD1189F/
2SD1055/2SD1919/2SD1227M
2SB1188/2SB1182/2SB1240/2SB
891F/2SB822/2SB1277/2SB911M
2SD1758
SC-63
2SD1189F
O-126FP
2SD1919
2SD1766
2SD1189F
2SB1240
LL1000 g
2SD1758
2SD1766
2SD1862
2SD1919
2SD1055
2SD1227M
2SB911M
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PDF
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