2 SD 427 TRANSISTOR Search Results

Contextual Info: SIEMENS BSP 17 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 4.0 V Type Vbs b f l DS(on) Package Marking BSP 17 50 V 3.2 A 0.1 ß SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 Tape and Reel Information

FLS2- transistor

Contextual Info: r i 7 ^ 7# . S G S - T H O M S O N M M » [ IC T [ » ! ] [ 1 §_ S D 1728 (T H 4 30 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS > IMD - 30 dB ■ GOLD METALLIZATION . COMMON EMITTER

Contextual Info: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current

Contextual Info: mu t i CEP4060A/CEB4060A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , RDS ON =85m Q @ V gs=10V. • Super high dense cell design for extremely low R ds (on). • High power and current handling capability. • TO-220 & TO-263 package.

sd 431 transistor

Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
Contextual Info: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS

mod400a

Contextual Info: CX*S ilicon ix Jm m MOD400A/400B/400C in c o r p o r a te d 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V ) rDS(ON) •d <«> (A) LEADFORM OPTION MOD400A 400 0.35 15 Straight MOD400B 400 0.35 15

BSS110 Siemens

Contextual Info: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode 2 , sty • Logic Level I • ^GS th = -0.8.-2.0 V ^ 3 ^ VPT05158 Pin 1 Pin 2 S Type BSS 110 VDS -50 V b -0.17 A Type BSS 110 BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S489

f3205

Contextual Info: interrii HRF3205, HRF3205S D a ta S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: f Z #7. SGS-THOMSON KM@[j[L[i TE»n©§_ SD 1726 T H A I 5 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION P out = 150 W PEP MIN. WITH 14 dB GAIN

2SD774

Abstract: transistor 2sb734 transistor 2sd774 2SD774, transistor 2SB734 2SD774 transistor
Contextual Info: NEC NPN SILICON TRANSISTOR 2 SD 7 7 4 DESCRIPTION The 2S D 774 is designed for use in driver and output stages of PACKAGE DIMENSIONS audio frequency amplifiers. in millimeters inches FEATURES 7.0 MAX. (0 .27 5 MAX.) Py : 1.0 W (Ta = 25 °C) • High Totai Power Dissipation

Contextual Info: SIEMENS BUZ 71 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds Id ^DS on Package Ordering Code BUZ 71 50 V 14 A 0.1 Q TO-220 AB C67078-S1316-A2 Maximum Ratings Parameter Symbol Continuous drain current

PA1910

Abstract: PA1910TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent

diode BFT 99

Abstract: ot 306 buz71a Transistor BFT 99 Transistor BFT 44 IR4060
Contextual Info: SIEMENS BUZ 71 A N ot fo r new design SiPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 A Vbs 50 V b 13 A ^DS on 0.12 ß Package Ordering Code TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter Symbol Values Continuous drain current

PA1910

Abstract: PA1910TE SC-95
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

SD1728 M177

Abstract: Transistor TH430 D
Contextual Info: fry SGS-THOMSON ^ 7 / SD 1728 T H 4 3 0 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD - 30 dB GOLD METALLIZATION COMMON EMITTER P o u t — 250 W PEP WITH 14.5 dB GAIN

Contextual Info: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

14n50

Abstract: TL 424 TRANSISTOR sth14n50
Contextual Info: SGS-THOMSON «^ miOTrifMOOi STH14N50 STH14N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH14N50 STH14N50FI . . . . . V dss RDS(on Id 500 V 500 V 0.45 Q 0.45 £2 14.1 A 8 .8 A AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED

SmD TRANSISTOR a77

Abstract: smd marking code SSs
Contextual Info: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 current switching applications. FEATURES

7652n

Abstract: 2n6766
Contextual Info: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l

SLN-286

Contextual Info: ¿¡3 Stanford Microdevices Product Description SLN-287 Stanford M icrodevices’ SLN-287 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a j low-cost plastic drop-in package. A Darlington configuration is used for broadband performance from DC-3.5 GHz.

Contextual Info: Figure 19. IR M I 030 detail drawings with optional side view or top view mounting *MIN. ,008 .20 Photoimageable solder mask recommended between pads to prevent bridging -0 .0 8 1 (2 .0 6 ) Recommended " keep out area R 0 .05 2(R 1 .3 2 h -0.323 (8.21)r 0.001 (0.03) |

2SK2982

Abstract: 2SK2982-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 5.0±0.2 • Low On-Resistance 2.3±0.2