Untitled
Abstract: No abstract text available
Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V
|
Original
|
Si4503DY
S-20894--Rev.
17-Jun-02
|
PDF
|
Si4310BDY
Abstract: No abstract text available
Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14
|
Original
|
Si4310BDY
SO-14
08-Apr-05
|
PDF
|
Si4814DY
Abstract: No abstract text available
Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V
|
Original
|
Si4814DY
S-03951--Rev.
26-May-03
|
PDF
|
Si4376DY
Abstract: Si4376DY-T1 Si4830DY
Text: Si4376DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 7.5 0.0275 @ VGS = 4.5 V 6.5 0.019 @ VGS = 10 V 7.5 0.023 @ VGS = 4.5 V
|
Original
|
Si4376DY
Si4830DY
08-Apr-05
Si4376DY-T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V
|
Original
|
Si4814DY
S-31421â
07-Jul-03
|
PDF
|
CI 3060 elsys
Abstract: Si4310BDY
Text: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14
|
Original
|
Si4310BDY
SO-14
18-Jul-08
CI 3060 elsys
|
PDF
|
Si4350DY
Abstract: Si4350DY-T1
Text: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V
|
Original
|
Si4350DY
SO-14
Si4350DY-T1
18-Jul-08
|
PDF
|
Si4924DY-T1
Abstract: Si4924DY
Text: Si4924DY Vishay Siliconix Asymetrical Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0105 @ VGS = 10 V 11.5 0.0145 @ VGS = 4.5 V 10 D1
|
Original
|
Si4924DY
Si4924DY-T1
18-Jul-08
|
PDF
|
CH21212
Abstract: No abstract text available
Text: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5
|
Original
|
Si4814BDY
S-50342--Rev.
28-Feb-05
CH21212
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V
|
Original
|
SiA519EDJ
2002/95/EC
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
65176
Abstract: S0926 SIA519
Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V
|
Original
|
SiA519EDJ
2002/95/EC
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
65176
S0926
SIA519
|
PDF
|
TA-3264
Abstract: ENN6973
Text: Ordering number : ENN6973 MCH6618 N-Channel and P-Channel Silicon MOSFETs MCH6618 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6618] 0.3 4 5 6 3 2 0.65 1 0.15 0.25 0.07 The MCH6618 encapsulates an N-channel MOSFET and a P-channel MOSFET that feature low
|
Original
|
ENN6973
MCH6618
MCH6618]
MCH6618
TA-3264
ENN6973
|
PDF
|
65176
Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V
|
Original
|
SiA519EDJ
2002/95/EC
SC-70-6
18-Jul-08
65176
SiA519EDJ-T1-GE3
|
PDF
|
Si4340DY
Abstract: Si4340DY-T1
Text: Si4340DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0115 @ VGS = 4.5 V
|
Original
|
Si4340DY
SO-14
S-32273--Rev.
03-Nov-03
Si4340DY-T1
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TPCP8407 MOSFETs Silicon P-/N-Channel MOS U-MOS /U-MOS TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small, thin package (2) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.)
|
Original
|
TPCP8407
|
PDF
|
si4814
Abstract: Si4814DY-T1 Si4814DY
Text: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 D LITTLE FOOTr Plus Integrated Schottky
|
Original
|
Si4814DY
18-Jul-08
si4814
Si4814DY-T1
|
PDF
|
A07 mosfet
Abstract: Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N
Text: TSM4544D 30V Dual N & P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 5. Drain 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V 1 1 2 2 N-Channel 30 P-Channel -30 Features RDS(on)(mΩ) ID (A) 30 @ VGS = 10V 7 44 @ VGS = 4.5V
|
Original
|
TSM4544D
TSM4544DCS
A07 mosfet
Dual p-Channel MOSFET SOP8
P-Channel MOSFET code 1A
P-CHANNEL
Dual N & P-Channel
Dual P-Channel MOSFET 30v
Dual N & P-Channel MOSFET
Dual N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING
|
Original
|
2N7336
250mA
FOR25
CER-DIP-14
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
MCH6626
MCH6626]
MCH6626
ENN7918
MCH6626/D
|
PDF
|
NDS9942
Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
Text: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3
|
OCR Scan
|
bSD1130
NDS9942
NDS9943*
NDS9952
NDS9958*
National Semiconductor Discrete catalog
SOIC-8
NDS9943
NDS9958
P channel
SOIC8
|
PDF
|
lm358 current sense
Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
Text: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201
|
OCR Scan
|
PWR-NCH201
OTO70°
PWR-NCH201BNC1
16-PIN
PWR-NCH201BNC2
PWR-NCH201BNC3
lm358 current sense
lm358 16pin diagram
LM324 noise
Enhancement Mode MOSFET Array
pin configuration of LM358
disadvantages of mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TC0205AD Vishay Siliconix New Product Dual N- and P-Channel ±20-V Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS V N-Channel 20 r D S (o n) 2.0 @ VGs P-Channel lD(mA) (Q) = 4-5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @Vq s = -4 .5 V -1 8 0 5.0 @V qs = "2 .5 V
|
OCR Scan
|
TC0205AD
SC-70,
S-0427
16-Jui-01
TC0205AD
S-04279--
16-Jul-01
|
PDF
|
25S16
Abstract: No abstract text available
Text: SÌ4542DY - SNicönix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) (-2) I d (A) 0.025 @ VGS = 10 V ± 6 .9 30 0.035 @ VGS = 4.5 V
|
OCR Scan
|
4542DY
S-56944--
ov-98
25S16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: _ Si4500DY VISHAY Vishay Siliconix New Product Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V D S (V ) N-Channel 20 P-Channel -2 0 r D S (o n ) ( ) Id (A ) 0.030 @ VGS = 4.5 V ± 7 .0 0.040 @ VGS = 2.5 V ± 6 .0
|
OCR Scan
|
Si4500DY
S2SM735
DD17flflT
|
PDF
|
