SI4350DY Search Results

SI4350DY Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4350DY		Vishay Siliconix	MOSFETs		Original	PDF
Si4350DY SPICE Device Model		Vishay	Dual N-Channel 20-V (D-S) MOSFET		Original	PDF

SI4350DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4350DY Abstract: Si4350DY-T1 Text: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V	Original	PDF	Si4350DY SO-14 Si4350DY-T1 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V	Original	PDF	Si4350DY SO-14 Si4350DY-T1 08-Apr-05
Si4350DY Abstract: No abstract text available Text: SPICE Device Model Si4350DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4350DY 0-to-10V 12-Nov-03
c 5705 Abstract: AN609 Si4350DY Text: Si4350DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4350DY AN609 23-Dec-05 c 5705
Si4350DY Abstract: Si4350DY-T1 CH248 Text: Si4350DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.0075 @ VGS = 10 V 15 0.010 @ VGS = 4.5 V	Original	PDF	Si4350DY SO-14 Si4350DY-T1 S-32514--Rev. 08-Dec-03 CH248
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	PDF	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS