SI4814BDY Search Results

SI4814BDY Price and Stock

Filter by Manufacturer


Vishay Siliconix SI4814BDY-T1-E3 MOSFET 2N-CH 30V 10A/10.5A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4814BDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4814BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.25	Get Quote
Vishay Siliconix SI4814BDY-T1-GE3 MOSFET 2N-CH 30V 10A/10.5A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4814BDY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI4814BDYE3 DUAL N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4814BDYE3		950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4814BDY-T1-GE3 Transistor MOSFET Array Dual NChannel 30V 75A78A 8Pin SOIC N TR (Alt: SI4814BDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SI4814BDY-T1-GE3			143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI4814BDY Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4814BDY-T1-E3		Vishay	Dual N-channel 30-v (d-s) Mosfet With Schottky Diode		Original	PDF
SI4814BDY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC		Original	PDF
SI4814BDY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 10A 8SOIC		Original	PDF

SI4814BDY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4814DY Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3 Contextual Info: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:	Original	Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814DY-T1 IDM-40	PDF
Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
475224 Abstract: 6803 AN609 92360 75574n Contextual Info: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4814BDY AN609 02-Mar-06 475224 6803 92360 75574n	PDF
SI4814DY-T1-E3 Abstract: 56 pF CH Si4814BDY-T1-E3 Si4814DY Si4814DY-T1 Contextual Info: Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Dual N-Channel, 30 V D-S MOSFET with Schottky Diode Package: SO-8 Pin Out: Identical Part Number Replacements: Si4814BDY-T1-E3 Replaces Si4814DY-T1-E3 Si4814BDY-T1 Replaces Si4814DY-T1	Original	Si4814BDY Si4814DY Si4814BDY-T1-E3 Si4814DY-T1-E3 Si4814BDY-T1 Si4814DY-T1 10-Nov-06 56 pF CH	PDF
CH21212 Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5	Original	Si4814BDY S-50342--Rev. 28-Feb-05 CH21212	PDF
si4814b Abstract: Si4814BDY-T1-E3 si4814bdy Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	Si4814BDY 18-Jul-08 si4814b Si4814BDY-T1-E3	PDF
4535A Contextual Info: SPICE Device Model Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4814BDY 18-Jul-08 4535A	PDF
Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5	Original	Si4814BDY Si4814BDY--E3 Si4814BDY-T1--E3 08-Apr-05	PDF
Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	Si4814BDY Si4814BDY-T1-E3 18-Jul-08	PDF
Contextual Info: New Product Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) Channel-1 30 Channel-2 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	Si4814BDY Si4814BDY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4814BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	Si4814BDY Si4814BDY-T1-E3 Si4814BDY-T1-GE3 11-Mar-11	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF