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    1SS27 Search Results

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    1SS27 Price and Stock

    Toshiba America Electronic Components 1SS272TE85LF

    DIODE ARRAY GP 80V 100MA SC61B
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    DigiKey 1SS272TE85LF Cut Tape 21,085 1
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    1SS272TE85LF Digi-Reel 21,085 1
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    1SS272TE85LF Reel 18,000 3,000
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    Mouser Electronics 1SS272TE85LF 138,866
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    Quest Components 1SS272TE85LF 796
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    ComSIT USA 1SS272TE85LF 6,000
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    Win Source Electronics 1SS272TE85LF 34,000
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    Rochester Electronics LLC 1SS270-E

    DIODE FOR HIGH SPEED SWITCHING
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    DigiKey 1SS270-E Bulk 13,172
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    Rochester Electronics LLC 1SS270TD-E

    DIODE FOR HIGH SPEED SWITCHING
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    DigiKey 1SS270TD-E Bulk 13,172
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    Rochester Electronics LLC 1SS270-90RX

    DIODE FOR HIGH SPEED SWITCHING
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    DigiKey 1SS270-90RX Bulk 2,029
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    Rochester Electronics LLC 1SS270JTA-E

    DIODE FOR HIGH SPEED SWITCHING
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    1SS27 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS27 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS27 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS270 Hitachi Semiconductor Small Signal Original PDF
    1SS270 Hitachi Semiconductor SILICON EPITAXIAL PLANAR DIODE FOR HIGH SPEED SWIT Original PDF
    1SS270 Leshan Radio Company SWITCHING DIODES Original PDF
    1SS270 Renesas Technology Diode, Silicon Epitaxial Planar Diode For High Speed Switching Original PDF
    1SS270 Renesas Technology Silicon Epitaxial Planar Diode for High Speed Switching Original PDF
    1SS270 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS270 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS270A EIC Semiconductor High Speed Switching Diodes Original PDF
    1SS270A Hitachi Semiconductor SILICON EPITAXIAL PLANAR DIODE FOR HIGH SPEED SWIT Original PDF
    1SS270A Hitachi Semiconductor Small Signal Original PDF
    1SS270A Renesas Technology Diode, Silicon Epitaxial Planar Diode For High Speed Switching Original PDF
    1SS270A Renesas Technology Silicon Epitaxial Planar Diode for High Speed Switching Original PDF
    1SS270A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS270A Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS271 Kexin VHF UHF Mixer Applications Original PDF
    1SS271 Toshiba Japanese - Diodes Original PDF
    1SS271 TY Semiconductor VHF UHF Mixer Applications - SOT-23 Original PDF
    1SS271 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    1SS27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 Unit: mm ○超高速度スイッチング用 z 順方向が良い。 : VF 3 = 0.92V (標準) z 逆回復時間が短い。 : trr = 1.6ns (標準) z 端子間容量が小さい。


    Original     		PDF 1SS272

    1S1555

    Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
    Text: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300


    Original     		PDF 1N4148 1N4148 1S1553 1S1555 1SS133 1SS176 1SS270 DO-35 DO-34 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555

    Untitled

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS277WT BAND SWITCHING DIODE Applications • Low loss band switching in VHF television tuners • Surface mount band switching circuits PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 L Top View Marking Code: "L" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS277WT OD-523 OD-523

    Hitachi DSA002788

    Abstract: No abstract text available
    Text: 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-166A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS270A ADE-208-166A 1SS270A 1SS270 DO-34 Hitachi DSA002788

    1SS270

    Abstract: Hitachi DSA002788
    Text: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-165A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS270 ADE-208-165A 1SS270 DO-34 Hitachi DSA002788

    Untitled

    Abstract: No abstract text available
    Text: 1SS277WT BAND SWITCHING DIODE Applications • Low loss band switching in VHF television tuners • Surface mount band-switching circuits Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Continuous Reverse Voltage VR 35 V Continuous Forward Current


    Original     		PDF 1SS277WT OD-523

    1ss270a

    Abstract: Hitachi DSA0014
    Text: ADE-208-166A Z 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching Rev. 1 Aug. 1995 Features Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF ADE-208-166A 1SS270A DO-34 1ss270a Hitachi DSA0014

    1SS270A

    Abstract: No abstract text available
    Text: 1SS270A SILICON EPITAXIAL PLANAR HIGH SPEED SWITCHING DIODE Features • Low capacitance. C=3.0pF max. • Short reverse recovery time. (trr = 3.5ns max.) • High reliability. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage


    Original     		PDF 1SS270A 1SS270A

    Untitled

    Abstract: No abstract text available
    Text: 1SS270 High-speed switching diode Features 1. Low capacitance 2. Short reverse recovery time trr≤3.5 ns 3. Small glass package (DO-34) 4. High reliability Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings (Tj=25℃)


    Original     		PDF 1SS270 DO-34) 1-Jun-2004

    1SS270

    Abstract: No abstract text available
    Text: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-165A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS270 ADE-208-165A 1SS270

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 1SS272

    1SS270

    Abstract: GRZZ0002ZC-A
    Text: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0566-0300 Previous: ADE-208-165B Rev.3.00 Mar 24, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS270 REJ03G0566-0300 ADE-208-165B) GRZZ0002ZC-A m5-900 Unit2607 1SS270 GRZZ0002ZC-A

    1SS270A

    Abstract: GRZZ0002ZC-A
    Text: 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0300 Previous: ADE-208-166B Rev.3.00 Mar 24, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS270A REJ03G0567-0300 ADE-208-166B) GRZZ0002ZC-A P5-900 Unit2607 1SS270A GRZZ0002ZC-A

    1SS272

    Abstract: No abstract text available
    Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)


    Original     		PDF 1SS272 SC-61 1SS272

    1SS270

    Abstract: marking code 2 SOD523
    Text: 1SS270 SILICON EPITAXIAL PLANAR DIODE Band Swithing Diode Features • Extremely small surface mounting type • High reliability PINNING DESCRIPTION PIN Applications • High frequency switching 1 Cathode 2 Anode 2 1 K Top View Marking Code: "K" Simplified outline SOD-523 and symbol


    Original     		PDF 1SS270 OD-523 OD-523 1SS270 marking code 2 SOD523

    0A90

    Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
    Text: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y


    OCR Scan     		PDF 1K34A 455KHz) lN34AfflS 40MHz) 1K110 1K188FM 1S188FMÃ 1K188FM-1 0A90 2-1K261 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G

    Untitled

    Abstract: No abstract text available
    Text: 1SS277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI ADE-208-301B Z Rev. 2 Sept. 1, 1998 Features • Low forward resistance. (rf = 0.5Î2 max) • Ultra small glass package (UMD) enables easy mounting and high reliability. Ordering Information


    OCR Scan     		PDF 1SS277 ADE-208-301B 1SS277 40815HITEC D-85622

    Untitled

    Abstract: No abstract text available
    Text: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-165A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


    OCR Scan     		PDF 1SS270 ADE-208-165A DO-34

    1SS270A

    Abstract: No abstract text available
    Text: 1SS270A-Silicon Epitaxial Planar Diode for High Speed Switching Features Outline • Low capacitance. C=3.0pF max • Short reverse recovery time, (trr =3.5ns max) • Sm all glass package (MHD) enables easy mounting and high reliability.


    OCR Scan     		PDF 1SS270A 1SS270A

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-166A Z 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev. 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all glass package (M H D ) en ab les easy


    OCR Scan     		PDF ADE-208-166A 1SS270A 1SS270A DO-34

    1S2473

    Abstract: 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED
    Text: Diodes Quick reference I Molded Application Vr V MSR ( ^ 2 .5 ) I SIP9Pin j I TO-220FD 35 High-speed Ultra High-speed Low-leakage High-voltage ^ P a g e .1 6 0 ea Glass types Package I DO-35 M 1.8) Part No. 1SS2787 CD DO-34 (<>1.8) USD ( ¿ 1 .8 ) DO-41 ! ¿2.7)


    OCR Scan     		PDF O-220FD DO-35 1SS2787 1S2473 1S2472 1S2471 1SS41 1SS94 1SS93 1SS92 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE WÊÊF • WÊÊF m Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-61 : Vjr 3 = 0.92V (Typ.) : tj* ^ 1.6ns (Typ.)


    OCR Scan     		PDF 1SS272 SC-61 SC-61

    1SS271

    Abstract: No abstract text available
    Text: TOSHIBA 1SS271 TOSHIBA DIODE V H F- U H F M IXER APPLICATION • • • 1 SS271 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS271 SC-59 1SS271