1SS24 Search Results

Contextual Info: TOSHIBA {DISCR ET E/ O PTO } Í? 9097250 TOSHIBA DISCRETE/OPTO ]>ÊJ^ 7 2 5 0 67C 0 9 3 4 9 000^34^ 7 f D Y - 0 1SS242 7 - 0 T Silicon EpitaxiaLSchottky Barrier Type Diode UHF BAND MIXER APPLICATIONS. Unit in mm + Q25 L5-Q15 / / 0.65 û6±ai MAXIMUM RATINGS (Ta=25°C)

ISV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 176 - - fe * m Vr r m £ V 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 ÄS ÄS ÄS 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 am um BM 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1S V 121 1S V 122 1SV128 1SV156 1 S V 157 1 SV 172 1 S V 178

1SV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 1 76 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1SV237 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: 176 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1sv128 1SV156 ISV80 MA555 1S2186 1SS238 1SS241 1SS364 1SV26
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

0A90

Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
Contextual Info: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y

T72 diode of 45 kv

Abstract: diode T-77 1SS244 diode T77 77-1 T-77 T-72 diode
Contextual Info: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS244 Features • • • • • • 300mW Switching Diode 250 Volts High voltage switching General purpos e rectification

1SS244

Abstract: diode MSD3 diode 1ss244
Contextual Info: Diodes High–voltage switching diode 1SS244 Switching diodes FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăGlass sealed envelope. (MSD) 3)ăVRM=250V Guaranteed. FConstruction Silicon epitaxial planar FAbsolute maximum ratings (Ta = 25°C)

T72 diode of 45 kv

Contextual Info: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3

diode t87

Abstract: t85 diode DO-35 BLUE CATHODE t77 c.3 1SS245 SC-40 T-77 diode T-77 diode t85 ROHM 1SS245
Contextual Info: 40E ]> ROHM CO LTD 7 a 2 ñ clcicl OOObSIS b IRH tl -f Tf— K / D io d e s 1SS245 -F O Z -O l 1 S ilico n Epitaxial Planar H ig h-V o ltag e Sw itching Diode #-Jë\J"jÈ|3iI/Dimensions Unit : mm • W * 1 1) n l i B E T ' $ > & o 2) ¡ g i f H S T ' * « o

1SS241

Contextual Info: TOSHIBA {DISCRETE/OPT0> 9097250 TO SHIBA W? DE I ^ 7 2 5 0 D I S C R E T E /OPTO 1SS241 £. 67C 000^3 47 3 | ~ 093^7 T ~ o ~ f- Silicon Epitaxial ^Planar TypeDiode VHF TUNER BAND SWITCH APPLICATIONS. Unit in mm +Û 23 1 .6 -0 .1 5 g Nrt dei +1 FEATURES:

1SS244

Contextual Info: 1SS244 Diodes Switching diode 1SS244 !External dimensions Units : mm !Applications High voltage switching General purpose rectification CATHODE BAND (BLACK) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) VRM=250V guaranteed. 3) High reliability.

1SS245

Contextual Info: Diode, switching, leaded 1SS245 Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿0.5±0. I Features I • available in DO-35 package • part marking, see following table

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS244 Features • • • • • 300mW Switching Diode 250 Volts High voltage switching General purpos e rectification VRM=250V guaranteed.

1SS241

Abstract: 1sv128 1SV187 1S2186 1SS238 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: 176 - - fe * m Vr r m £ V 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 ÄS ÄS ÄS 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 am um BM 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1S V 121 1S V 122 1SV128 1SV156 1 S V 157 1 SV 172 1 S V 178

1sv196

Abstract: 1SV80 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

diode t87

Contextual Info: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.

W 9522

Abstract: 1SS245
Contextual Info: 1SS245 High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V Applications High voltage switch and general purpose rectification Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS244 Features Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)

1SS244

Abstract: CPF00
Contextual Info: 1SS244 K / D io d e s 1SS244 Silicon Epitaxial Planar High-Voltage Switching Mini-Diodes • &> & 1 \H iE ]/D im e n s io n s Unit : mm) o 2) (JEDEC : DO34) „ • Features 1) High reliability. 2) Glass sealed type (JEDEC : DO34). • ÎÈ ÎÎÜ I^ /È fê /'A b s o lu te Maximum Ratings (Ta=25°C)

1SS244

Abstract: SEMTECH 1SS244
Contextual Info: 1SS244 SILICON EPITAXIAL PLANAR DIODE HIGH VOLTAGE SWITCHING GENERAL PURPOSE RECTIFICATION APPLICATIONS Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Limits Unit Peak Reverse Voltage VRM 250 V DC Reverse Voltage VR 220 V Peak Forward Current IFM 625

Contextual Info: 1SS244 High-voltage switching diode Features 1. Small surface mounting type 2. High reliability 3. VRM=250V Applications High voltage switch and general purpose rectification Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1SS244

Contextual Info: 1SS244 SILICON EPITAXIAL PLANAR DIODE HIGH VOLTAGE SWITCHING GENERAL PURPOSE RECTIFICATION APPLICATIONS Features • Glass sealed envelope. MSD • VRM = 250V guaranteed. • High reliability. Absolute Maximum Ratings (Ta = 25oC) Parameter Symbol Limits