1SS27 Search Results

Contextual Info: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 Unit: mm ○超高速度スイッチング用 z 順方向が良い。 : VF 3 = 0.92V (標準) z 逆回復時間が短い。 : trr = 1.6ns (標準) z 端子間容量が小さい。

1S1555

Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

0A90

Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
Contextual Info: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y

Contextual Info: 1SS277WT BAND SWITCHING DIODE Applications • Low loss band switching in VHF television tuners • Surface mount band switching circuits PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 L Top View Marking Code: "L" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC

Hitachi DSA002788

Contextual Info: 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-166A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS270

Abstract: Hitachi DSA002788
Contextual Info: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-165A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

Contextual Info: 1SS277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI ADE-208-301B Z Rev. 2 Sept. 1, 1998 Features • Low forward resistance. (rf = 0.5Î2 max) • Ultra small glass package (UMD) enables easy mounting and high reliability. Ordering Information

Contextual Info: 1SS277WT BAND SWITCHING DIODE Applications • Low loss band switching in VHF television tuners • Surface mount band-switching circuits Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Continuous Reverse Voltage VR 35 V Continuous Forward Current

Contextual Info: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-165A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1ss270a

Abstract: Hitachi DSA0014
Contextual Info: ADE-208-166A Z 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching Rev. 1 Aug. 1995 Features Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS270A

Contextual Info: 1SS270A SILICON EPITAXIAL PLANAR HIGH SPEED SWITCHING DIODE Features • Low capacitance. C=3.0pF max. • Short reverse recovery time. (trr = 3.5ns max.) • High reliability. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage

Contextual Info: 1SS270 High-speed switching diode Features 1. Low capacitance 2. Short reverse recovery time trr≤3.5 ns 3. Small glass package (DO-34) 4. High reliability Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings (Tj=25℃)

1SS270

Contextual Info: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-165A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.

Contextual Info: ADE-208-166A Z 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev. 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all glass package (M H D ) en ab les easy

1S2473

Abstract: 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED
Contextual Info: Diodes Quick reference I Molded Application Vr V MSR ( ^ 2 .5 ) I SIP9Pin j I TO-220FD 35 High-speed Ultra High-speed Low-leakage High-voltage ^ P a g e .1 6 0 ea Glass types Package I DO-35 M 1.8) Part No. 1SS2787 CD DO-34 (<>1.8) USD ( ¿ 1 .8 ) DO-41 ! ¿2.7)

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

1SS270

Abstract: GRZZ0002ZC-A
Contextual Info: 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0566-0300 Previous: ADE-208-165B Rev.3.00 Mar 24, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.

1SS270A

Abstract: GRZZ0002ZC-A
Contextual Info: 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0567-0300 Previous: ADE-208-166B Rev.3.00 Mar 24, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.

Contextual Info: TOSHIBA 1SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE WÊÊF • WÊÊF m Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-61 : Vjr 3 = 0.92V (Typ.) : tj* ^ 1.6ns (Typ.)

f1 smd marking

Abstract: marking A1 1SS272 smd marking A1
Contextual Info: Diodes SMD Type Ultar High Speed Switching Applications 1SS272 Unit: mm Features Low Forward Voltage:VF 3 =0.92 V(Typ.) Fast Reverse Recovery Time:trr = 1.6 ns (Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) Absolute M axim um R atings T a = 25 P aram eter

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)

1SS271

Contextual Info: TOSHIBA 1SS271 TOSHIBA DIODE V H F- U H F M IXER APPLICATION • • • 1 SS271 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) M A X IM U M RATINGS (Ta = 25°C)

1SS270

Abstract: marking code 2 SOD523
Contextual Info: 1SS270 SILICON EPITAXIAL PLANAR DIODE Band Swithing Diode Features • Extremely small surface mounting type • High reliability PINNING DESCRIPTION PIN Applications • High frequency switching 1 Cathode 2 Anode 2 1 K Top View Marking Code: "K" Simplified outline SOD-523 and symbol