1N914F
Abstract: 1N916 1N914 transistor data sheet free download diode 1n914 1N914 data sheet MAM246 1N914
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 10 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES
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M3D176
1N914;
1N916
DO-35)
1N916
1N914F
1N914 transistor data sheet free download
diode 1n914
1N914 data sheet
MAM246
1N914
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1N914
Abstract: 1N914A 1N914B MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
1N914;
1N914A;
1N914B
DO-35)
1N914,
1N914A
1N914
1N914B
MAM246
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1N914
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
1N914
DO-35)
1N914
MAM246
115002/03/pp8
MAM246
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PDF
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1N916
Abstract: 1N914 MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES
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M3D176
1N914;
1N916
DO-35)
1N916
1N914
MAM246
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PDF
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1N914F
Abstract: 1N916 1N914 MAM246 diode 1N916
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N916 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES
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Original
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M3D176
1N914;
1N916
DO-35)
1N916
1N914F
1N914
MAM246
diode 1N916
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PDF
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1N916
Abstract: 1N914 diode 1N914
Text: Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N914; 1N916 are high-speed switching diodes fabricated in planar tecshnology, and encapsulated in hermetically sealed leaded glass SOD27
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1N914;
1N916
DO-35)
1N916
1N914 diode
1N914
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PDF
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diode cross reference 1n914
Abstract: 1n914 str 50113 sa marking axial diode philips 1n914a marking diode axial
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
1N914
DO-35)
1N914
MAM246
DO-35;
SC-40)
diode cross reference 1n914
str 50113
sa marking axial diode
philips 1n914a
marking diode axial
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SC4075
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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Original
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M3D176
1N914
DO-35)
1N914
MAM246
01-May-99)
SC4075
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PDF
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1N914
Abstract: No abstract text available
Text: FEATURES 1N914 • • • • • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS:
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1N914
1N914
MIL-PRF-19500/116
500mW
MILPRF-19500/116
DO-35
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PDF
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1n914 equivalent
Abstract: 1N914 JANTX IN914 1N914 D0-35
Text: • 1N914 AVAILABLE IN JAN, PER MIL-PRF-19500/116 JANTX, AND JANTXV 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
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1N914
MIL-PRF-19500/116
1N914
IN914
1n914 equivalent
1N914 JANTX
IN914
D0-35
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IN914
Abstract: No abstract text available
Text: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV 1N914 PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
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1N914
MIL-PRF-19500/116
1N914
20Vdc
IN914
IN914
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PDF
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MIL-PRF-19500/116
Abstract: 1N914 D0-35 IN914
Text: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
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1N914
MIL-PRF-19500/116
1N914
IN914
MIL-PRF-19500/116
D0-35
IN914
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N914 AVAILABLE IN JAN, JAN TX, AND JA N T X V 1N914 PER M1L-PRF-195D0/11G SWITCHING DIODE HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Operating Current: 75 mA @ T ^ = + 25°C
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1N914
M1L-PRF-195D0/11G
1N914
IN914
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PDF
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ico n d u cto rs P ro d u ct s p e cifica tio n High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package • High switching speed: max. 4 ns The 1N914; 1N916 are high-speed switching diodes fabricated in planar
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1N914;
1N916
DO-35)
1N916
1N914
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Untitled
Abstract: No abstract text available
Text: 1N914 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEM ICO N D U CTO R 4^ 43 TECHNICAL DATA_ TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES ' ‘ *
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1N914
IL-STD-202E,
N4148MJ
1N4148\
11N914
1N4454
1N4148
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 • T ' O ^ - O 0! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20
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1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148
1N4149
1N4150
1N4151
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1N914 CJ 4148
Abstract: No abstract text available
Text: 1N914 THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage
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1N914
DO-34
DO-35
MIL-STD-202E,
SbA766gDrSbA8
1N914 CJ 4148
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1N914 smd
Abstract: melf smd 1n914 1N4148 DL-35 1N4148 SMD sot23 PACKAGE 1N4148 DL-35 PACKAGE LL4148 SOd323 1N4148 SMD PACKAGE 1N4148 sod-323 BAS21 SOD323 ll4148 sod123
Text: SENSITRON SEMICONDUCTOR SMALL SIGNAL SWITCHING DIODES 1 Pd (mW) Package Device Family 200 250 300 350 410 1N4148WS 1N4448WS BAL99W BAS16W BAS16WS BAS19W – BAS21W BAS19WS – BAS21WS BAV70W BAV99W BAW56W MMBD4148W MMBD4448W MMDL6050 MMDL914 1N914 DL914
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1N4148WS
1N4448WS
BAL99W
BAS16W
BAS16WS
BAS19W
BAS21W
BAS19WS
BAS21WS
BAV70W
1N914 smd
melf smd 1n914
1N4148 DL-35
1N4148 SMD sot23 PACKAGE
1N4148 DL-35 PACKAGE
LL4148 SOd323
1N4148 SMD PACKAGE
1N4148 sod-323
BAS21 SOD323
ll4148 sod123
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1N914
Abstract: 1N914A 1N914B
Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 1N914(A)(B) Features • • • Low Current Leakage Metalurgically Bonded Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diode Maximum Ratings • • • DO-35 Operating Temperature: -65°C to +175°C
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1N914
500mW
DO-35
1N914A
1N914B
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1N4150
Abstract: 25 Ampere Silicon Power Diodes 1N4148M 1n914a-1
Text: HITANO ENTERPRISE CORP. 1N914 THRU 1N4148~1N4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING VOLTAGE RANGE -50 to 100 Volts DIODES CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low power loss, high efficiency * Low leakage
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1N914
1N4148
1N4454
DO-34
DO-35
MIL-STD-202E,
1N4150
1N4151
25 Ampere Silicon Power Diodes
1N4148M
1n914a-1
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PDF
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Untitled
Abstract: No abstract text available
Text: 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 1N914(A)(B) Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diode Maximum Ratings • • • DO-35 Operating Temperature: -65°C to +175°C
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1N914
500mW
DO-35
1N914A
1N914
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1N4150
Abstract: 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4148 1N4154 1N4448
Text: 1N914 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency
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1N914
DO-34
DO-35
MIL-STD-202E,
SbA766gDrSbA8
1N4150
1N914 CJ 4148
CJ 4148
1N914/1N4148
YC 746
1N4151
1n914a-1
1N4148
1N4154
1N4448
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PDF
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N914,A,B-1N916,A,B SWITCHING RECTIFIERS MAXIMUM RATINGS Symbol Value Units Maximum repetitive reverse voltage Parameter VRRM 100 V Average rectified forward current IF AV 200 mA Non-repetitive peak forward surge current Pulse width = 1.0 second
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1N914
B-1N916
1N914
1N916B
MIL-PRF-19500,
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1n4148-phi
Abstract: 1n4148ph AAP153 BA479 BA482 BAS32 1N4148 minimelf 1N4148 1N4151 BAS216
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 nepeKnronaro^Me Kofl: m yHMBepcanbHbie BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 V r » [B] 30 35 50 75 75 100 100 [A]“ 0,05 0,1 0,2 0,2 0,2 0,15 0,075 V f npw [B]
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BA479
BA482
1N4151
1N4148
1N4148-PHI
1N4448
1N914
AAP153
TMMBAT42
TMMBAT43
1n4148ph
BAS32
1N4148 minimelf
BAS216
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