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    Microchip Technology Inc 1N5555

    TVS DIODE 30.5VWM 47.5VC DO13
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    Microchip Technology Inc JANTX1N5555

    TVS DIODE 30.5VWM 47.5VC DO13
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    Microchip Technology Inc 1N5555-TR

    TVS DIODE 30.5VWM 47.5VC DO13
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    Microchip Technology Inc JAN1N5555

    TVS DIODE 30.5VWM 47.5VC DO13
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    Microchip Technology Inc JANTXV1N5555

    TVS DIODE 30.5VWM 47.5VC DO13
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    1N5555 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5555 Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 30.5VWM 47.5VC DO13 Original PDF
    1N5555 Microsemi Transient Absorption Zener Scan PDF
    1N5555 Microsemi Data Book 1983 Scan PDF
    1N5555 Microsemi Transient Absorption Zener Scan PDF
    1N5555 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5555 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5555 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5555 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5555 New England Semiconductor 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES Scan PDF
    1N5555 Semitron Data Book 1991 Scan PDF
    1N5555/TR Microchip Technology TVS DIODE 30.5VWM 47.5VC DO13 Original PDF
    1N5555TR Microsemi 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR Original PDF

    1N5555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DO-202AA

    Abstract: 1N5555 military part marking symbols jan Diode 1N5555 1N5556 1N5557 1N5558 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS 1N5555 1N5557


    Original     		PDF MIL-PRF-19500/500 1N5555 1N5557 1N5556 1N5558 1N5555 1N5558 T4-LDS-0094 DO-13 DO-202AA military part marking symbols jan Diode 1N5555 1N5556 1N5557 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX

    Untitled

    Abstract: No abstract text available
    Text: 1N5555+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage33 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage31 I(PPM) Max.(A)Pk.Pulse Current32.0


    Original     		PDF 1N5555 Voltage33 Voltage31 Current32 Voltage47 StyleDO-13

    1N5629a

    Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
    Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		PDF 1N5555 1N5558 1N5907 1N5629A 1N5665A 1N5629A 1N5630A 1N5645A series 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A

    Untitled

    Abstract: No abstract text available
    Text: 1N5555 Transient Voltage Suppressor 6.98 Diodes Transient Suppressors Unidirectional . Page 1 of 1 Enter Your Part # Home Part Number: 1N5555 Online Store 1N5555 Diodes Transient Voltage Suppressor Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 1N5555 1N5555 DO-13 com/1n5555

    DO-202AA

    Abstract: 1N5555 JANTXV 1N5555 Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036
    Text: 1N5555 1N5557 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N5555 thru 1N5558 are JEDEC registered selections for unidirectional devices. All have the


    Original     		PDF 1N5555 1N5557 1N5556 1N5558 1N5555 IEC61000-4-5. DO-202AA 1N5555 JANTXV Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036

    Untitled

    Abstract: No abstract text available
    Text: 1N5555+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage33 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage31 I(PPM) Max.(A)Pk.Pulse Current32.0


    Original     		PDF 1N5555 Voltage33 Voltage31 Current32 Voltage47 StyleDO-13

    1N5646A JANTX

    Abstract: 1N5555UEJ diode 716 1N5645A JANTX 1N5635A
    Text: INCH-POUND MIL-PRF-19500/716 28 April 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH


    Original     		PDF MIL-PRF-19500/716 1N5555UEG 1N5558UEG, 1N5555UEJ 1N5558UEJ, 1N5629AUEG 1N5665AUEG, 1N5629AUEJ 1N5665AUEJ, 1N5907UEG, 1N5646A JANTX 1N5555UEJ diode 716 1N5645A JANTX 1N5635A

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5555-1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR MAXIMUM RATINGS 1500 Watts for 10/1000µs with repetition rate of 0.01% or less* at lead temperature TL 25°C Operating and Storage Temperatures -65 to +175°C Thermal Resistance


    Original     		PDF 1N5555-1N5558 DO-13, MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: 1N5555+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage33 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage31 I(PPM) Max.(A)Pk.Pulse Current32.0


    Original     		PDF 1N5555 Voltage33 Voltage31 Current32 Voltage47 StyleDO-13

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    D0-202AA

    Abstract: No abstract text available
    Text: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 DO-13 MIL-S-19500/500 D0-202AA

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 1N5555 1N5558 DO-13

    Untitled

    Abstract: No abstract text available
    Text: Microsemi Corp. SANTA ANA, CA SCOTTSDALE, A l For m ore inform ation call: 602 941-6300 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARM FUL TRANSIENTS • ABSORBS TRANSIENTS UP TO I500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF I PICO SECOND


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 MIL-S-19500/500

    1N5555

    Abstract: Diode 1N5555
    Text: 1N5555 asii TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5555 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. MAXIMUM RATINGS 200 A @ t = 8.33 mS Is REVERSE STAND OFF VOLTAGE 30.5V Vr


    OCR Scan     		PDF 1N5555 DO-13 1N5555 Diode 1N5555

    Untitled

    Abstract: No abstract text available
    Text: 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 1N5558 13n---------- 1N5556 1N5557

    TVS Transient Voltage Suppressors

    Abstract: 1N5557 bje fuse
    Text: TVS Transient Voltage Suppressors 1N5555 th r u 1N555B DESCRIPTION This specification sheet defines a series of 1500 Watt Silicon Transient Suppressors for use primarily in Airborne Equipment where large voltage transients can permanently damage voltage sensitive components. These TVS


    OCR Scan     		PDF 1N5555 1N555B MIL-S-19500/434. 2-431-22BB TVS Transient Voltage Suppressors 1N5557 bje fuse

    transient suppressor diodes

    Abstract: 1N5555
    Text: Back to Zener Diodes 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent


    OCR Scan     		PDF 1N5555 1N5556 1N5557 1N5558 1N5555 1N5556 1N5557 1N5558 transient suppressor diodes

    Untitled

    Abstract: No abstract text available
    Text: 1N5555 asi TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5555 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. .220" ± .005 DIA. " 5 . 5 8 t .127 DIA. mm .10" MAX. DIA. " 2 . 5 4 MAX. DIA. (mm)


    OCR Scan     		PDF 1N5555 DO-13 1N5555

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    diode IN5552

    Abstract: SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE 1N5550 1N5551 js 10 watt zener diode 1N5554
    Text: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. I N 5555 1N 5556 1N 5557 1N 5558 1N 5559 IN 5560 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0


    OCR Scan     		PDF 1N5550 1N5551 IN5552 1N5553 1N5554 1N5555 1N5556 1N5557' 1N5558 DO-13 diode IN5552 SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE js 10 watt zener diode

    1N5557

    Abstract: 1N5555
    Text: • f a ^ ^ ^ FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per M IL -S -19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested • • • • M A XIM U M R A TINGS 1500 W atts o f Peak Pulse P ow er d is ­


    OCR Scan     		PDF IL-S-19500/434. 1N5557 1N5555

    MIL-S-19500

    Abstract: MIL-S-19500-507 1N538 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent
    Text: MILITARY DEVICES The following table lists the device types available from Semicon Components Inc. which are manufactured and tested in accordance with the requirements of MIL-S-19500 Revision "G” and the appropriate indicated detail specification. TYPE NUMBER


    OCR Scan     		PDF MIL-S-19500 1N538 1N540 1N547 1N560 1N561 1N1124A& 1N1126AS 1N1128A& 1N3649 MIL-S-19500-507 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175