1N457
Abstract: No abstract text available
Text: 1N457 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N457 Availability Online Store Diodes
|
Original
|
PDF
|
1N457
1N457
STV3208
LM3909N
|
equivalent diode for 1n457
Abstract: 1N457 1N457 equivalent 1N457A JAN1N457 marking blue
Text: FEATURES 1N457 • • • • • 1N457 AVAILABLE AS 1N457A, & AS JAN1N457 PER MIL-PRF-19500/193 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine, 8.3mS:
|
Original
|
PDF
|
1N457
1N457
1N457A,
JAN1N457
MIL-PRF-19500/193
225mA
500mW
0256mA/
PRF-19500/193
equivalent diode for 1n457
1N457 equivalent
1N457A
marking blue
|
1n457
Abstract: No abstract text available
Text: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg
|
Original
|
PDF
|
1N457/A
DO-35
1N457
1N457A
1N457/A,
|
1N457
Abstract: equivalent diode for 1n457 1n457 equivalent 7121 1N457A
Text: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg
|
Original
|
PDF
|
1N457/A
DO-35
1N457
equivalent diode for 1n457
1n457 equivalent
7121
1N457A
|
diode cross reference 1N457
Abstract: 1n457
Text: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg
|
Original
|
PDF
|
1N457/A
DO-35
1N457
DO-35
1N457TR
diode cross reference 1N457
|
Untitled
Abstract: No abstract text available
Text: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg
|
Original
|
PDF
|
1N457/A
DO-35
|
1N457
Abstract: 1N SERIES DIODE
Text: 1N457/A 1N457/A DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage Parameter 70 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg
|
Original
|
PDF
|
1N457/A
DO-35
1N457ATR
DO-35
1N457A
1N457
1N SERIES DIODE
|
Untitled
Abstract: No abstract text available
Text: 1N457+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current75m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage70 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)20m @Temp. (øC) (Test Condition)
|
Original
|
PDF
|
1N457
Current75m
Voltage70
Current25n
StyleDO-35
|
equivalent diode for 1n457
Abstract: 1N457 equivalent 1n457a equivalent JESD282-B 1N457 1N458A
Text: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds
|
Original
|
PDF
|
1N457A
1N459A
MIL-PRF-19500/193
1N457
1N459
DO-35
1N459A
1N457
1N458
equivalent diode for 1n457
1N457 equivalent
1n457a equivalent
JESD282-B
1N458A
|
1N5426
Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current
|
Original
|
PDF
|
00000S3
DO-35
400mW
1N4150
1N4152
1N4153
1N4305
DO-35
1N5426
1N5208
AMERICAN POWER DEVICES 1n914
|
equivalent diode for 1n457
Abstract: No abstract text available
Text: 1N457A thru 1N459A Qualified Level: JAN Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/193 DESCRIPTION These popular 1N457 – 1N459 series of JEDEC registered switching/signal diodes are metallurgically bonded. These small low capacitance diodes with very fast switching speeds
|
Original
|
PDF
|
1N457A
1N459A
MIL-PRF-19500/193
1N457
1N459
DO-35
1N459A
T4-LDS-0023,
equivalent diode for 1n457
|
ALL4150
Abstract: 1N4606
Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current
|
Original
|
PDF
|
00000S3
DO-35
ALL4152
ALL4153
ALL4450
ALL4451
ALL4453
ALL4454
500mW
ALL4150
1N4606
|
1N457 tempco
Abstract: 1n457 equivalent equivalent diode for 1n457 925 pin-compatible 2N2219 2N2905 2N3964 AMS3100 AMS3100AM AMS3100BM
Text: Advanced Monolithic Systems AMS3100 ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE RoHS compliant FEATURES APPLICATIONS • Adjustable from 1.24V to 5.30V • Operating Current 10µA to 20mA • 1% and 2% Initial Tolerance • 1Ω Dynamic Impedance • Low Temperature Coefficient
|
Original
|
PDF
|
AMS3100
AMS3100
OT-23
OT-23
1N457 tempco
1n457 equivalent
equivalent diode for 1n457
925 pin-compatible
2N2219
2N2905
2N3964
AMS3100AM
AMS3100BM
|
1n456
Abstract: 25nA 1N458 1N457
Text: DIODE 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 Low Current FEATURES • Metallurgical Bond • Qualified to MIL-S-1950W193 • Planar Passivated Chip • DO-7 Package DESCRIPTION General purpose low current diode with high reliability characteristics
|
OCR Scan
|
PDF
|
1N456
1N457;
1N457
1N458;
1N458
1N459;
1N459
MIL-S-1950W193
25nA
|
|
|
diode IN457
Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Text: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September
|
OCR Scan
|
PDF
|
MIL-S-19500/193C
1N457,
1N458,
1N459
MIL-S-19500
5961-A371)
diode IN457
JYt marking
IC 4011 details
1N457
1N458
1N459
origin semiconductor rectifier
|
1n457
Abstract: n456a DSAIH00025333 1N456A
Text: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature
|
OCR Scan
|
PDF
|
1N456
1N456A
1N458A
1N457
1N459
1N457A
1N459A
1N458
500mW
1N456/A
n456a
DSAIH00025333
|
1N456A
Abstract: 1N457 1N459a N457 1N456 1N457A 1N458 1N458A 1N459 low leakage diodes
Text: B K C INTERN ATI ONA L □ 3E LOW LEAKAGE DIODES D I 117^^03 □□□□275 5 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ W IV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature
|
OCR Scan
|
PDF
|
Q57sT~
1N456
1N458
1N456A
1N458A
1N457
1N459
1N457A
1N459A
500mW
1N459a
N457
1N458
1N458A
1N459
low leakage diodes
|
1N456
Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
Text: Diode Data NATL SEMICOND DISCRETE HE D [ faSQliaO 0037GQ1 7 | Low Leakage Diodes Glass Package Device No. 1N456 Package No. DO-35 VRRM V Min •r nA Max 30 25 Vr V If mA C PF Max 1.0 40 10 VF v Min 25 ® Max 1N456A DO-35 30 25 25 1.0 100 1N457 DO-35 70
|
OCR Scan
|
PDF
|
fa5Q1130
0037GQ1
1N456
DO-35
1N456A
1N457
1N457A
1N458
1N458A
1N459
1N459A
Scans-0016000
|
fjt1101
Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125
|
OCR Scan
|
PDF
|
1N456
DO-35
1N456A
1N457
1N457A
1N458
fjt1101
FJT1102
1N459A
FJT1100
1N458A
|
23J2
Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30
|
OCR Scan
|
PDF
|
1N456
1N457
1N461
1N462
1N483
1N484
CB-26)
23J2
BAW32D
BAY18
1n484a
|
1N458B
Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
Text: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum
|
OCR Scan
|
PDF
|
00000H3
DO-35
1N456
1N456A
1N457
1N457A
1N458
1N458A
1N458B
1N619
1N5426
AMERICAN POWER DEVICES 1n914
1N5208
1N444
|
1N4848
Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Text: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70
|
OCR Scan
|
PDF
|
fa501J
T-01-01
1N456
DO-35
1N456A
1N457A
1N458
1N4848
1N4868
1N4828
1N484
1N4858
1N458A
|
FJT1
Abstract: FJT1100 1N456A FJT1102
Text: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A
|
OCR Scan
|
PDF
|
1N456
1N456A
1N457
1N457A
1N458
1N458A
1N459
1N459A
FDH300
DO-35
FJT1
FJT1100
FJT1102
|
1N459
Abstract: 1N456 1N457 IN456 IN457 J 1N456 1N458
Text: DIODE 1N456 JAN 1N457 JAN 1N458 JAN 1N459 Low Current DESCRIPTION G eneral p urp o se low c u rre n t d io d e w ith h ig h re lia b ility c h a ra c te ris tic s FEATURES • M e ta llu rg ic a l Bond • Q u a lifie d to MIL-S-19500/193 • P lanar P a ssivated C hip
|
OCR Scan
|
PDF
|
1N456
1N457
1N458
1N459
MIL-S-19500/193
1N456
1N457
1N458
1N459
IN456
IN457
J 1N456
|
