1N4150
Abstract: 1N4151 MAM246 1n4150 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151 High-speed diodes Product specification Supersedes data of 1996 Sep 03 1999 Jun 01 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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Original
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M3D176
1N4150;
1N4151
DO-35)
1N4150
1N4151
115002/03/pp8
MAM246
1n4150 philips
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PDF
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1N4150
Abstract: 1N4151 1N4150 Philips 1N4153 MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153
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Original
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M3D176
1N4150;
1N4151;
1N4153
DO-35)
1N4150,
1N4151,
1N4150
1N4151
1N4150 Philips
1N4153
MAM246
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PDF
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1N4150
Abstract: 1N4151 1N4153 1n4150 philips MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 19 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153
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Original
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M3D176
1N4150;
1N4151;
1N4153
DO-35)
1N4150,
1N4151,
1N4150
1N4151
1N4153
1n4150 philips
MAM246
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PDF
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range
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Original
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1N4149,
1N4151-1N4154,
1N4446-1N4449
1N4149
1N4151
1N4152
1N4153
1N4154
1N4447
1N4448
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PDF
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Untitled
Abstract: No abstract text available
Text: SCS WILLAS 1N4151 1N4151 SIGNAL DIODE Pb Free Product Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated .012 .022 0.55 .018(0.45) .076 (1.95) .100 (2.55) C .059 (1.5) .087(2.2) .067(1.7)
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Original
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1N4151
1N4151
DO-35)
DO-35
OD-323
SC-76)
100Forward
100mA
1N4151)
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PDF
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1N4150
Abstract: 1N4153 1N4153-1 1N4151
Text: Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N4150,1N 4151, 1N4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically seated leaded glass
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OCR Scan
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1N4150;
1N4151;
1N4153
1N4150
1N4151,
1N4153
DO-35)
1N4150:
1N4151
1N4153-1
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PDF
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1N4148 DO-34
Abstract: 1N4532 BB112 vhf diode BB212 bb809 BB910 SOD-69 1N4148 1N4149
Text: N AUER PHILIPS/DISCRETE 2SE D • bbSBTBl OOlbiaa 3 ■ T '-O 'S -O 'I 1o Small Signal Devices SWITCHING DIODES ; TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS11 BAV10 BAV18 BAV19 BAV20
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OCR Scan
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1N914
DO-35
1N914A
1N914B
1N916
1N916A
1N4148 DO-34
1N4532
BB112
vhf diode
BB212
bb809
BB910
SOD-69
1N4148
1N4149
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 • T ' O ^ - O 0! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20
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OCR Scan
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1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4148
1N4149
1N4150
1N4151
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.
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OCR Scan
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1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4151
IN4153
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PDF
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1n4148-phi
Abstract: 1n4148ph AAP153 BA479 BA482 BAS32 1N4148 minimelf 1N4148 1N4151 BAS216
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 nepeKnronaro^Me Kofl: m yHMBepcanbHbie BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 V r » [B] 30 35 50 75 75 100 100 [A]“ 0,05 0,1 0,2 0,2 0,2 0,15 0,075 V f npw [B]
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OCR Scan
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BA479
BA482
1N4151
1N4148
1N4148-PHI
1N4448
1N914
AAP153
TMMBAT42
TMMBAT43
1n4148ph
BAS32
1N4148 minimelf
BAS216
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151 FEATURES DESCRIPTION • H erm etically sealed leaded glass S O D 27 D O -35 package The 1N 4150 and 1N 4151 are high-speed sw itching diodes fabricated in planar technology, and encapsulated in herm etically sealed leaded glass S O D 27
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OCR Scan
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1N4150;
1N4151
MAM246
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PDF
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1N4151
Abstract: No abstract text available
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 1N4151 Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 75 Volt Silicon Epitaxial Diode Maximum Ratings • • • DO-35 Operating Temperature: -55°C to +150°C
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1N4151
500mW
DO-35
1N4151
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PDF
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SL415
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 SURGE PART NUMBER •■■■ Peak Reverse voltage VRM 1N914 :,:v -v 100 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 Forwan Voltage wmmm» % 75 75 75 75 50 50 25 75 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
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OCR Scan
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250mW/500mW
DO-35
1N914
1N914A
1N914B
1N4148
1N4150
1N4151
1N4154
1N4448
SL415
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PDF
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d1n914
Abstract: bb204b BAV10
Text: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35
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OCR Scan
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DO-35
d1n914
bb204b
BAV10
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Planar Passivated Metallurgically bonded Construction Moisture Sensitivity Level 1
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1N4151
1N4154
500mW
DO-35
1N4154
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features l Planar Passivated l Metallurgically bonded Construction l Moisture Sensitivity Level 1
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Original
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1N4151
1N4154
500mW
DO-35
1N4154
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PDF
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1N4151
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Planar Passivated Metallurgically bonded Construction Moisture Sensitivity Level 1
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Original
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1N4151
1N4154
500mW
DO-35
25oCUnless
1N4151
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PDF
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1N4151
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 75 Volt Silicon Epitaxial Diode Maximum Ratings
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Original
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1N4151
500mW
DO-35
1N4151
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PDF
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1N4154
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Planar Passivated Metallurgically bonded Construction Moisture Sensitivity Level 1
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Original
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1N4151
1N4154
500mW
DO-35
1N4154
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PDF
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1N4151
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N4151 Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 75 Volt Silicon Epitaxial Diode Maximum Ratings
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Original
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1N4151
500mW
DO-35
1N4151
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PDF
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1n4154
Abstract: 1n4151
Text: MCC 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features l Planar Passivated l Metallurgically bonded Construction l DO-35 500mW Silicon Switching Diode Maximum Ratings o o
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1N4151
1N4154
500mW
DO-35
1N4154
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • • • • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)
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Original
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1N4151
J-STD-020C
500mW
DO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • • Low Current Leakage Compression Bond Construction Low Cost Marking : Cathode band and type number
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Original
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1N4151
500mW
DO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • • Low Current Leakage Compression Bond Construction Low Cost Marking : Cathode band and type number
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Original
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1N4151
500mW
DO-35
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PDF
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