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    1MX4 DRAM SOJ Search Results

    1MX4 DRAM SOJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CY7C429-20VC Rochester Electronics LLC FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28, 0.300 INCH, SOJ-28 Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy

    1MX4 DRAM SOJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F224BJ1 KMM374F224BJ1 EDO Mode without buffer 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224BJ1 is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F224BJ1


    Original     		PDF KMM374F224BJ1 KMM374F224BJ1 1Mx16 2Mx72bits 1Mx16bits 400mil 300mil 168-pin

    ds573

    Abstract: 722056-D51G14JL D51G1
    Text: 2M x 72 Bit 5V BUFFERED FPM DIMM Fast Page Mode FPM DRAM DIMM 722056-D51G14JL 168 Pin 2Mx72 FPM DIMM buffered, 1k Refresh, 5V with SPD General Description The 722056-D51G14JL is a 2Mx72 bit, 14 chip, 5V, 168 Pin DIMM module consisting of (8) 1Mx16 (SOJ) DRAM, (4) 1Mx4 (SOJ) DRAM and (2)buffers.


    Original     		PDF 722056-D51G14JL 2Mx72 1Mx16 168-pin 1Mx16 1024-cycle DS573-0 ds573 D51G1

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F224CJ1 KMM374F224CJ1 EDO Mode without buffer 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224CJ1 is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F224CJ1 consists of eight CMOS 1Mx16bits DRAMs


    Original     		PDF KMM374F224CJ1 KMM374F224CJ1 1Mx16 2Mx72bits 1Mx16bits 400mil 300mil 168-pin

    UG6M23621PBG

    Abstract: edo dram 50ns 72-pin simm DQ18-DQ25
    Text: • UG6M23621PBG T 8M Bytes (2M x 36 ) DRAM 72Pin SIMM w/Parity based on 1M X 16 General Description Features The UG6M23621PBG(T) is a 2,097,152 bits by 36 SIMM module.The UG6M23621PBG(T) is assembled using 4 pcs of 1Mx16 1K refresh and 2 pcs of 1Mx4 Quad CAS DRAM SOJ package,


    Original     		PDF UG6M23621PBG 72Pin 1Mx16 1000mil) edo dram 50ns 72-pin simm DQ18-DQ25

    DS469

    Abstract: TAA 762 72 simm function
    Text: 2M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 362006-S51m06JG 72 Pin 2Mx36 FPM SIMM Unbuffered, 1k Refresh, 5V Pin Assignment General Description The module is a 2Mx36 bit, 6 chip, 5V, 72 Pin SIMM module consisting of (4) 1Mx16 (SOJ) DRAM (2) 1Mx4 QUAD CAS DRAMs.


    Original     		PDF 362006-S51m06JG 2Mx36 1Mx16 72-pin 1Mx16 1024-cycle DS469-05f DS469 TAA 762 72 simm function

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    ODQ35

    Abstract: KM44C1003CJ
    Text: Preliminary KMM5362203BW/BWG DRAM MODULE KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin ODQ35 KM44C1003CJ

    1Mx4

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The


    OCR Scan     		PDF KMM5361203W/WG 1Mx36 1Mx16 KMM5361203W 42-pin 24-pin 72-pin 1Mx4

    km44c1003cj

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES


    OCR Scan     		PDF KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 KMM5361203BW 42-pin 24-pin 72-pin km44c1003cj

    km44c1003cj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS


    OCR Scan     		PDF KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KMM5361233AW km44c1003cj

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 5361203BW KMM5361203BW cycles/16m KMM5361203BW

    KMM5362203AW-6

    Abstract: kmm5362203aw
    Text: DRAM MODULE 8 Mega Byte KMM5362203AW/AWG Fast Page Mode 7 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1 Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 Dynamic RAM high density memory module. The • Performance Range:


    OCR Scan     		PDF KMM5362203AW/AWG 2Mx36 KMM5362203AW 1Mx16 42-pin 24-pin 72-pin KMM5362203AW-6

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124BJ KMM372F124BJ Fast Page with EDO Mode 1M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124BJ is a 1Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F124BJ


    OCR Scan     		PDF KMM372F124BJ KMM372F124BJ 1Mx16 1Mx72bits 1Mx16bits 400mil 300mil 16bits

    KMM5322000-10

    Abstract: KMM5322000
    Text: KMM532200QAV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


    OCR Scan     		PDF KMM532200QAV/AVG KMM5322000AV- KMM5322000AV-10 130ns 150ns 180ns KMM532200QAV bitsx32 KMM5322000AV KMM5322000-10 KMM5322000

    Untitled

    Abstract: No abstract text available
    Text: KMM374F124BJ ELECTR O NICS DRAM Module KMM374F124BJ EDO Mode without buffer 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F124BJ is a IM bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM374F124BJ KMM374F124BJ 1Mx72 1Mx16 1Mx16bit 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS


    OCR Scan     		PDF KMM372F124AJ KMM372F124AJ 1Mx72 1Mx16 1Mx16bit 400mil 300mil 16bits

    KMM5361000

    Abstract: "soj 26" dram 80 ns G392
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit


    OCR Scan     		PDF KMM536100QA/AG/A1 KMM5361 bitsX36 20-pin 72-pin KMM5361000 "soj 26" dram 80 ns G392

    Untitled

    Abstract: No abstract text available
    Text: KMM5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000AV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


    OCR Scan     		PDF KMM5321000AV/AVG 1Mx32 KMM5321000AV- KMM5321000AV-10 100ns 130ns 150ns 180ns KMM5321000AV

    5362203

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5362203W/WG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 BAN DRAM and 1Mx4 Quad CAS DRAM G E N E R A L DESCRIPTIO N FEATURES • Performance Range. The Sam sung KM M 5362203W is a 2M bit x 36 D ynam ic RAM high density m em ory m odule The


    OCR Scan     		PDF KMM5362203W/WG 2Mx36 1Mx16 362203W 72-pin KMM5322203W 5362203

    KM48C2100AJ

    Abstract: No abstract text available
    Text: DRAM MODULE y 8 Mega Byte KMM5362209AU/AUG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 2Mx8 B/W DRAM and 1Mx4 Quad CAS DRAM with AND Gate GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5362209AU is a 2M bit x 36 Dynam ic RAM high de nsity m em ory module. The


    OCR Scan     		PDF KMM5362209AU/AUG 2Mx36 5362209AU 362209A 24-pin 16-pin 72-pin KM48C2100AJ, KM44C1003CJ KM48C2100AJ

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 1Mx16 KMM5362203BW 2Mx36bits 1Mx16bits 42-pin 24-pin 72-pin

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung KMM5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS


    OCR Scan     		PDF M5362203AW/AWG M5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW 5362203AW 24-pin 72-pin 362203A KMM5362203AW KM416C1200AJ

    KM44V1004CJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V G EN ERA L DESCRIPTIO N FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS


    OCR Scan     		PDF KMM372F124AJ KMM372F124AJ 1Mx72 1Mx16 1Mx16bit 400mil 300mil 16bits KM44V1004CJ