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1M16E5 Price and Stock

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BURNDY YAD31M16E58 300-350KCM FLEX 5/8 STUD \| BURNDY YAD31M16E58
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	YAD31M16E58	Bulk			10	1 - 10 $35.64 100 $35.64 1000 $35.64 10000 $35.64	Get Quote
Micron Technology Inc MT4C1M16E5DJ-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4C1M16E5DJ-6		938			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MT4C1M16E5DJ-6		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4C1M16E5TG-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4C1M16E5TG-6		725			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MT4C1M16E5TG-6		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4LC1M16E5TG-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4LC1M16E5TG-6		410			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MT4LC1M16E5TG-6		51		1	1 $6.72 10 $4.368 100 $3.1362 1000 $3.1362 10000 $3.1362	Buy Now
Micron Technology Inc MT4LC1M16E5DJ-5:Z
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4LC1M16E5DJ-5:Z		390			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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1M16E5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
as4c1m16e5-60jc Abstract: as4c1m16e5-50jc Text: $6&0 $XJXVW 9 0î &026 '5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ	Original	PDF	42-pin 44/50-pin AS4C1M16E5-60) as4c1m16e5-60jc as4c1m16e5-50jc
as4c1m16e5 Abstract: AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc Text: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 16 bits • High speed - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	Original	PDF	AS4C1M16E5 42-pin 44/50-pin AS4C1M16E5) AS4LC1M16E5) AS4C1M16E5-60) as4c1m16e5 AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc
AS4LC1M16E5 Abstract: AS4LC1M16E5-50JC Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	PDF	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) AS4LC1M16E5 AS4LC1M16E5-50JC
AS4LC1M16E5-60TC Abstract: No abstract text available Text: $6/&0 90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time	Original	PDF	42-pin 44/50-pin AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) AS4LC1M16E5-50JC AS4LC1M16E5-50JI AS4LC1M16E5-50TC AS4LC1M16E5-60TC
4C1M16E5 Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1 Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	PDF	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) 4C1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
as4c1m16e5-60jc Abstract: as4c1m16e5 AS4C1M16E5-45JC Text: $6&0 90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time	Original	PDF	42-pin 44/50-pin AS4C1M16E5-60) AS4C1M16E5) AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) AS4C1M16E5-45JC as4c1m16e5-60jc as4c1m16e5
Untitled Abstract: No abstract text available Text: $GYDQFHLQIRUPDWLRQ $66&0 90ð&026,QWHOOLZDWW'5$0 ('2 HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh • Read-modify-write	Original	PDF	42-pin 44/50-pin 1DQ15 AS4SC1M16E5-100JC AS4SC1M16E5-100TC 1M16E5
AS4LC1M16E5-60TC Abstract: AS4LC1M16E5 AS4LC1M16E5-60JC Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time	Original	PDF	AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) AS4LC1M16E5-60TC AS4LC1M16E5 AS4LC1M16E5-60JC
Untitled Abstract: No abstract text available Text: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features - RAS-only or CAS-before-RAS refresh or self-refresh • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	Original	PDF	AS4C1M16E5 42-pin 44/50-pin AS4C1M16E5) AS4LC1M16E5) AS4C1M16E5-60)
RR 113001 Abstract: 1M16E5 Text: Advance information •■ 1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write	OCR Scan	PDF	AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-100JC AS4VC1M16E5-100TC 1M16E5 RR 113001 1M16E5
G1117S Abstract: MT4LC1M165 Text: ADVANCE ft 1M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44	OCR Scan	PDF	MT4LC1M16E5 024-cycle 225mW 44/50-Pin MT4lCtMt6E54S) L111S41 G1117S MT4LC1M165
Untitled Abstract: No abstract text available Text: A 1M16E5 3V 1Mx 16 CMOS DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • High speed •TTL-com patible, three-state DQ ■JEDEC standard package and pinout - 5 0 / 6 0 ns RAS access time - 2 0 /2 5 ns hyper page cycle time - 1 2 /1 5 ns CAS access time	OCR Scan	PDF	42-pin AS4LC1M16E5) AS4VC1M16E5) AS4SC1M16E5) M16E5 42-pin AS4LC-1M16E5-50JCAS4LC-1M 16E5-50JI AS4LC1M16E5-60JC AS4LC1M16E5-60JI
Untitled Abstract: No abstract text available Text: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh	OCR Scan	PDF	42-pin 42-pin AS4SC1M16E5-100JC 44/50-pin AS4SC1M16E5-100TC 1M16E5 44/50-pin