as4c1m16e5-60jc
Abstract: as4c1m16e5-50jc
Text: $6&0 $XJXVW 9 0î &026 '5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ
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Original
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42-pin
44/50-pin
AS4C1M16E5-60)
as4c1m16e5-60jc
as4c1m16e5-50jc
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PDF
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as4c1m16e5
Abstract: AS4C1M16E5-60TC AS4LC1M16E5 as4c1m16e5-50jc
Text: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 16 bits • High speed - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout
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Original
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AS4C1M16E5
42-pin
44/50-pin
AS4C1M16E5)
AS4LC1M16E5)
AS4C1M16E5-60)
as4c1m16e5
AS4C1M16E5-60TC
AS4LC1M16E5
as4c1m16e5-50jc
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PDF
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AS4LC1M16E5
Abstract: AS4LC1M16E5-50JC
Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time
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Original
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AS4LC1M16E5
42-pin
44/50-pin
AS4LC1M16E5)
AS4LC1M16E5
AS4LC1M16E5-50JC
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PDF
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AS4LC1M16E5-60TC
Abstract: No abstract text available
Text: $6/&0 90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time
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Original
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42-pin
44/50-pin
AS4LC1M16E5)
AS4VC1M16E5)
AS4SC1M16E5)
AS4LC1M16E5-50JC
AS4LC1M16E5-50JI
AS4LC1M16E5-50TC
AS4LC1M16E5-60TC
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PDF
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RR 113001
Abstract: 1M16E5
Text: Advance information •■ 1M16E5 A 2.5V lM x 16 CMOS lntelliwatt,v DRAM EDO Features 1 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh 1Read-modify-write
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OCR Scan
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AS4VC1M16E5
42-pin
44/50-pin
AS4VC1M16E5-100JC
AS4VC1M16E5-100TC
1M16E5
RR 113001
1M16E5
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PDF
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4C1M16E5
Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time
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Original
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AS4LC1M16E5
42-pin
44/50-pin
AS4LC1M16E5)
4C1M16E5
AS4LC1M16E5-60TC
AS4LC1M16E5
4C1M1
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PDF
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G1117S
Abstract: MT4LC1M165
Text: ADVANCE ft 1M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44
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OCR Scan
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MT4LC1M16E5
024-cycle
225mW
44/50-Pin
MT4lCtMt6E54S)
L111S41
G1117S
MT4LC1M165
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PDF
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Untitled
Abstract: No abstract text available
Text: A 1M16E5 3V 1Mx 16 CMOS DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • High speed •TTL-com patible, three-state DQ ■JEDEC standard package and pinout - 5 0 / 6 0 ns RAS access time - 2 0 /2 5 ns hyper page cycle time - 1 2 /1 5 ns CAS access time
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OCR Scan
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42-pin
AS4LC1M16E5)
AS4VC1M16E5)
AS4SC1M16E5)
M16E5
42-pin
AS4LC-1M16E5-50JCAS4LC-1M
16E5-50JI
AS4LC1M16E5-60JC
AS4LC1M16E5-60JI
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PDF
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as4c1m16e5-60jc
Abstract: as4c1m16e5 AS4C1M16E5-45JC
Text: $6&0 90ð&026'5$0 ('2 HDWXUHV • Organization: 1,048,576 words x 16 bits • High speed • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time
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Original
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42-pin
44/50-pin
AS4C1M16E5-60)
AS4C1M16E5)
AS4LC1M16E5)
AS4VC1M16E5)
AS4SC1M16E5)
AS4C1M16E5-45JC
as4c1m16e5-60jc
as4c1m16e5
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PDF
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Untitled
Abstract: No abstract text available
Text: $GYDQFHLQIRUPDWLRQ $66&0 90ð&026,QWHOOLZDWW'5$0 ('2 HDWXUHV • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh • Read-modify-write
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Original
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42-pin
44/50-pin
1DQ15
AS4SC1M16E5-100JC
AS4SC1M16E5-100TC
1M16E5
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PDF
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AS4LC1M16E5-60TC
Abstract: AS4LC1M16E5 AS4LC1M16E5-60JC
Text: 1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time
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Original
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AS4LC1M16E5
42-pin
44/50-pin
AS4LC1M16E5)
AS4LC1M16E5-60TC
AS4LC1M16E5
AS4LC1M16E5-60JC
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh
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OCR Scan
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42-pin
42-pin
AS4SC1M16E5-100JC
44/50-pin
AS4SC1M16E5-100TC
1M16E5
44/50-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 1M16E5 5V 1Mx16 CMOS DRAM EDO Features - RAS-only or CAS-before-RAS refresh or self-refresh • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout
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Original
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AS4C1M16E5
42-pin
44/50-pin
AS4C1M16E5)
AS4LC1M16E5)
AS4C1M16E5-60)
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PDF
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