1L3000 Search Results

Contextual Info: À U ujüP M 1 \ 1 < » H Ili h! î Hc Li V-s 11 ( ; is i h - l i t f S !I ; H i l! i vj Advance information Features •A utom atic an d direct precharge 1 Burst read, single w rite • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 8 bits x 2 banks (2M x8) 3 2 4 ,2 8 8 w ords x 16 bits x 2 banks

16F5

Abstract: 4c1m16
Contextual Info: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh

Contextual Info: A S4L C 16M 4S0 A S4L C 8M 8S0 A S4L C 4M 16S0 H ig h p e r f o r m a n c e 16 M x 4 / 8 M X 8 /4 M X 16 CMOS DRAM A 6 4 M egabit CMOS synchronous DRAM Advance information Features • O rg a n iz a tio n - 4 ,1 9 4 ,3 0 4 w ords X 4 bits X 4 banks 16MX4

Contextual Info: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its

AS4C256K16F0-60JC

Abstract: sem 2105 16 pin
Contextual Info: Preliminary information Features • R e a d -m o d ify -w r ite • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s b y 16 b its • T T L ~ com p atib le, th r e e -s ta te 1 / O • H ig h s p e e d • JEDEC stan d ard p a ck a g es - 5 0 / 6 0 ns RAS access tim e