1SS31 Search Results

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

Diode marking TY

Abstract: IR switch smd diode marking um marking ty TY SMD diode 1SS314
Contextual Info: Diodes SMD Type VHF TUNER BAND SWITCH APPLICATIONS 1SS314 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small packag Small Total capacitance: CT = 1.2pF Max. Low series resistance: rs = 0.5 +0.1 2.6-0.1 1.0max (Typ.) 0.375

1SS312

Contextual Info: 1SS312 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS312 ○ VHF チューナバンドスイッチ用 単位: mm • 外形が小さい。 • 容量が小さい。 : CT = 1.2 pF 最大 • 順抵抗が小さい。 : rs = 0.6 Ω (標準)

Contextual Info: Product specification 1SS314 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small packag Small Total capacitance: CT = 1.2pF Max. Low series resistance: rs = 0.5 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 A b s o lu te M a x im u m R a tin g s T a = 2 5

Contextual Info: Product specification 1SS312 Features Small packag Small Total capacitance: CT = 1.2pF Max Low series resistance: rs = 0.6 (Typ.) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a r a m e te r S ym bol R a tin g R e v e r s e V o lta g e VR 30 V F o rw a rd C u rre n t

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm .1 . 2 +0.2 5 - 0. IL iM O -H in CM Nr— Nh i M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current

Contextual Info: 1SS314 TO SHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5H (Typ.) +0.2 1.2 5 - 0. IL SYMBOL Vr

Contextual Info: TOSHIBA 1SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s

1SS314

Contextual Info: 1SS314 SILICON EPITAXIAL PLANAR DIODE Applications • VHF Tuner Band Switch PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 TY Top View Marking Code: "TY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit

1SS312

Abstract: EIAJ standards
Contextual Info: 1SS312 TOSHIBA 1SS312 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. U n i t in m m 2.1 ± 0.1 1.25±0.1 • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) OO +I

Contextual Info: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -55~125 °C Maximum (peak) reverse voltage

Contextual Info: 1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications • Small package. · Small total capacitance: CT = 1.2 pF max · Low series resistance: rs = 0.5 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: Diodes SMD Type VHF TUNER BAND SWITCH APPLICATIONS 1SS312 Features Small packag Small Total capacitance: CT = 1.2pF Max Low series resistance: rs = 0.6 (Typ.) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a r a m e te r S ym bol R a tin g R e v e r s e V o lta g e

0A90

Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
Contextual Info: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y

1SS319

Contextual Info: TOSHIBA 1SS319 TO SHIBA DIODE 1SS319 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-61 Ln Ln «- p

1SS314

Contextual Info: 1SS314 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS31 4 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.50 (Typ.) 0 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications • Unit: mm Small package. • Small total capacitance: CT = 1.2 pF max • Low series resistance: rs = 0.5 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics

1SS314

Contextual Info: 1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications • Unit: mm Small package. • Small total capacitance: CT = 1.2 pF max • Low series resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics

TOSHIBA Semiconductor Reliability Handbook

Abstract: 1SS315
Contextual Info: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg −55~125

1SS319

Contextual Info: 1SS319 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS319 ○ 低電圧高速スイッチング用 単位: mm : SC-61 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z リーク電流が小さい。

Contextual Info: 1SS313 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • 2.1 ± 0.1 Small Package. Small Total Capacitance : Ct = 1.2pF Max. Low Series Resistance : rs = 0.6i2 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

1SS311

Contextual Info: 1SS311 SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm . L o w Forward Voltage VF=0.94V Typ. . High Voltage V r = 4 0 0 V ( M i n .) . Fast Reve r s e Recovery Time trr= l- 5*is(Typ.) . Small Total Capacitance C t = 3 •2 p F ( T y p .)

1SS312

Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SS312 VHF TUNER BAND SWITCH APPLICATIONS Unit in mm . Small Package. 1.25±0.1 . Small Total Capacitance : C t = 1 •2pF Max. 3. Low Series Resistance MAXIMUM : rs=0 .6n(Typ.) RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: 1SS313 TOSHIBA 1 SS31 3 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS. • • • 2.1 ± 0.1 Small Package. Small Total Capacitance : Ct = 1.2pF Max. Low Series Resistance : rs = 0.6fl (Typ.) 1. 2 5 ± 0.1 3 OO