FRE9260
Abstract: delta plc 1E14 2E12 FRE9260D FRE9260H FRE9260R 19A, 200V, P-Channel Power MOSFET Rad Hard in Fairchild for MOSFET
Text: FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRE9260D,
FRE9260R,
FRE9260H
-200V,
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRE9260
delta plc
1E14
2E12
FRE9260D
FRE9260H
FRE9260R
19A, 200V, P-Channel Power MOSFET
Rad Hard in Fairchild for MOSFET
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PDF
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delta plc
Abstract: 1E14 2E12 FRE9260D FRE9260H FRE9260R
Text: FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRE9260D,
FRE9260R,
FRE9260H
-200V,
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
delta plc
1E14
2E12
FRE9260D
FRE9260H
FRE9260R
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PDF
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FRE9260
Abstract: 100KRAD
Text: CK h U ü a r r is ••«'coKouco- FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs june 1998 Package Features • 19A, -200V, RDS on) = 0.210il TO-25BAA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRE9260D,
FRE9260R,
FRE9260H
-200V,
O-25BAA
210il
100KRAD
300KRAD
1000KRAD
FRE9260
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PDF
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Untitled
Abstract: No abstract text available
Text: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)
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OCR Scan
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FRE9260D,
FRE9260R,
FRE9260H
-200V,
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS 2N7331D, 2N7331R S E M I C O N D U C T O R PRELIMINARY REGISTRATION PENDING Currently Available as FRE9260 D, R, H . x. . . Radiation Hardened P-Channel Power MOSFETs January 1993 Package Features • 19A.-200V, RDS(on) = 0.21 Oil TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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2N7331D,
2N7331R
FRE9260
O-258
-200V,
300KRAD
1000KRAD
3000KRAD
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PDF
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KHB019N20P1
Abstract: KHB019N20F1
Text: KHB019N20P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB019N20P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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Original
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KHB019N20P1/F1
KHB019N20P1
KHB019N20P1
KHB019N20F1
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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Original
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KHB019N20P1/F1
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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Original
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
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PDF
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KHB019N20F1
Abstract: KHB019N20F2 KHB019N20P1
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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Original
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
KHB019N20F1
KHB019N20F2
KHB019N20P1
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PDF
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KHB019N20F2
Abstract: KHB019N20F1 KHB019N20P
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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Original
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
KHB019N20F2
KHB019N20F1
KHB019N20P
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PDF
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2N7331D
Abstract: 2E12 2N7331H 2N7331R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H 2N7331D, 2N7331R 2N7331H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 19A, -200V, RDS(on) = 0.210Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRE9260
2N7331D,
2N7331R
2N7331H
-200V,
O-258
100KRAD
300KRAD
1000KRAD
3000KRAD
2N7331D
2E12
2N7331H
2N7331R
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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Original
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KHB019N20P1/F1
KHB019N20P1
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PDF
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Untitled
Abstract: No abstract text available
Text: 4305271 GG53b4G 7H2 H H A S fS5 h a r r i s UU 2N7331D, 2N7331R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRE9260 D, R, H N 7 3 3 1 H . Radiation Hardened N-Channel Power MOSFETs A pril 1994 Package Features • 19A, -200V, RDS(on) = 0.210Q
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OCR Scan
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GG53b4G
2N7331D,
2N7331R
FRE9260
-200V,
O-258
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: ì li h a r r is U U I S E M IC O N D U C T O R FRE260D, FRE260R, FFÌE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 31 A, 200V, RDS on = 0.0800 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRE260D,
FRE260R,
E260H
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS SEfllCOND S E C T O R CSÎ h a f r f r is U U bSE T> m 4302271 OGNIDbb D O 6] H H A S 2N7302D, 2N7302R S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H juneigg3 Features . Radiation Hardened N-Channel Power MOSFETs
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OCR Scan
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2N7302D,
2N7302R
FRE260
O-258
100KRAD
300KRAD
1000KRAD
3000KRAD
O-258AA
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PDF
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1E14
Abstract: 2E12 2N7302D 2N7302H 2N7302R 2N7302
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H 2N7302D, 2N7302R 2N7302H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 31A, 200V, RDS(on) = 0.080Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts
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Original
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FRE260
2N7302D,
2N7302R
2N7302H
O-258
100KRAD
300KRAD
1000KRAD
3000KRAD
O-258AA
1E14
2E12
2N7302D
2N7302H
2N7302R
2N7302
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PDF
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1E14
Abstract: 2E12 FRE260D FRE260H FRE260R
Text: FRE260D, FRE260R, FRE260H 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31A, 200V, RDS on = 0.080Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRE260D,
FRE260R,
FRE260H
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRE260D
FRE260H
FRE260R
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PDF
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Untitled
Abstract: No abstract text available
Text: y*Rg*s FRE260D, FRE260R, FRE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31 A, 200V, RDS on = 0.080£i TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRE260D,
FRE260R,
FRE260H
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-258AA
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PDF
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Untitled
Abstract: No abstract text available
Text: H a rris 2N7331D, 2N7331R 21^733 1H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 19A, -200V, RDS(on) = 0.21Oft TO-258
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OCR Scan
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2N7331D,
2N7331R
FRE9260
O-258
-200V,
21Oft
100KRAD
300KRAD
1000KRAD
3000KRAD
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PDF
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star delta plc
Abstract: delta plc 1E14 2E12 FRE260D FRE260H FRE260R Rad Hard in Fairchild for MOSFET 214 fairchild transistor
Text: FRE260D, FRE260R, FRE260H 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31A, 200V, RDS on = 0.080Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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FRE260D,
FRE260R,
FRE260H
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
star delta plc
delta plc
1E14
2E12
FRE260D
FRE260H
FRE260R
Rad Hard in Fairchild for MOSFET
214 fairchild transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 4.4 1.0 5.45 5.45 0.6 If Q w . . 500V ' V ' rDS ON (M A X ). . 0.50Í2
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OCR Scan
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FK18SM-10
150ns
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PDF
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FK18SM-12
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 T O <t>3.2 5.45 0.6 4 Q w r V d s s .60 0 V rDS ON (MAX). 0.54Î2
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OCR Scan
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FK18SM-12
150ns
FK18SM-12
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PDF
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10lbxin
Abstract: classd audio amplifier
Text: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI
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Original
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IRFB4103PbF
O-220AB
O-220AB
10lbxin
classd audio amplifier
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PDF
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digital audio mosfet
Abstract: PN channel MOSFET 10A
Text: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI
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Original
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IRFB4103PbF
O-220AB
O-220AB
digital audio mosfet
PN channel MOSFET 10A
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PDF
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