18JUN Search Results

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S REVISIO N S RESERVED. LTR A D E S C R IP T IO N R E V IS E D PER ECO- DATE 314471 18JUN09

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION 20 LOC F ALL RIGHTS RESERVED. BY - 20 2 3 1 REVISIONS DIST 00 P DESCRIPTION LTR A DATE REDRAW CLARIFICATION DWN APVD JT 18JUN2013 YP D D SCALE 1:1 8.2 2 0.8µm MIN AU OVER NICKEL 2 4µm MIN Sn, OVER Cu UNDERLAYER

JIS 3406

Contextual Info: 108-5262 Product Specification 製品規格 18JUN2013 Rev. C6 エコノシール J マーク II+ コネクタ 1. 適用範囲 1.1 内容 本規格はエコノシール J マークⅡ＋コネクタの製品性能試験方法、品質保証の必要条件を規定している。

Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV 8 23SX83-H340 DOCUMENT C H A N G E D BY 0053519 SSK 18JUN09 CHECK CMH PRODUCT CODE VDP5720 •.O 30 *.0 10 SPHER R — .063 DIA A B .32 OPERATING POSITION 1 B F 350*.010 i. .090*.0l0 T .270 t.OIO-ì" 0 3 0 *0

341581

Abstract: PT1132
Contextual Info: 4 DRAWING HADE IN THIRD ANGLE PROJECTION U N PU B LIS H ED . RELEASED SV C COPYRIGHT 19 AM P FOR PU B LIC A TIO N INCORPORATED. LOC ,1 9 DIST G ALL INTERNATIONAL RIGHTS RESERVED. 14 R EV IS IO N S P F ZONE LTR DESCRIPTION F REV / 0720-0953-96 DATE 18JUN96

Oil 00037

Abstract: trane trane 00037 D3455 lube C6065
Contextual Info: Product Specification 108-2008 18Jun09 Rev E All Paragraphs Revised Cluster Block Assembly 1. SCOPE 1.1. Content This specification covers the general description and perform ance requirem ents for Tyco Electronics cluster block assem blies designed to connect with herm etic headers having 2.29 and 3.18 m m [.090

HXNV01600

Contextual Info: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC CM ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR E DESCRIPTION DATE REVISE PER ECR-13-003272 DWN APVD KH 18JUN2013 TM 1. UNIT ACCEPTS 1.14 [.045] SQUARE OR ROUND POST.

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. REVISIONS DIST HJ - P LTR DESCRIPTION E F F1 F2 New Coplanarity, Solder Pad Layout Printing REVISED PER ECO-11-005150 REVISED PER ECO-13-009645 18JUN2013 3 4° 0.9+0.3 A 2006 4° 3 4.9 Coplanarity<=0.10mm 6.7 16+0.5 -0.5

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION B3 B4 B5 C DWN DATE Printing New HF3 46E ECR-12-003906, New HF3 43I S REVISED PER ECO-13-009645 HD BK AK AK UKo UKo UKo UKo 09JUL2010 12JAN2012 29FEB2012 18JUN2013 APVD Mark 1)

INNER CARTON LABEL

Abstract: 912-050
Contextual Info: 107-68160 Packaging Specification 18Jun07 Rev H 2.5 mm Single Mate Conn on Tape Header 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5 mm Single Mate Conn on Tape Header product. 订定 2.5 mm Single Mate Conn on Tape Header 产品之包装规格及包装方式。

912-050

Contextual Info: 107-68159 Packaging Specification 18Jun07 Rev K ON TAPING RADIAL 2.5MM PITCH MIS 1. PURPOSE 目的 Define the packaging specifiction and packaging method of ON TAPING (RADIAL) 2.5MM PITCH MIS products. 订定 ON TAPING (RADIAL) 2.5MM PITCH MIS 产品之包装规格及包装方式。

Contextual Info: 4 DRAWING MADE IN THIRD ANGLE 3 PROJECTION THIS DRAWING IS UNROBE I SHED . C COPYRIGHT 19 REDEASED FOR ROBDI 0AT I ON AMP BY INCORPORATED. ALL 2 <3> , 19 INTERNATIONAL RIGHTS LOC Ah RESERVED. REV I 5IONS DI ST 50 P F LTR ZONE H DESCRIPTION DATE APPD 18JUN02 JR/ND

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION —,— LOC BY TYCO ELECTRONICS CORPORATION. REVISIONS DI5T AD 00 ALL RIGHTS RESERVED. LTR N +.002 0 2 5 T Y P -, TYP DESCRIPTION DATE REV PER 0G3C—031 3 —03 OWN APVD MB JO 18JUN03

567243

Contextual Info: Lock All Fields Dimensioning and tolerancing per ASME Y14.5M-2009 N1 REPLACED BY CUSTOMER ACCESSIBLE PRODUCTION DRAWING 18JUN2012 XZ SX SE &86720(5$&&(66,%/(  PRODUCTIO1DRAWING 567243 X. ZHAO S.XI S.XI SIDE FEED HDM APPLICATOR 567243 N1

c920

Abstract: c746
Contextual Info: 4 DRAWING C ANGLE PRO JECTIO N IS UNPUBLISHED. COPYRIGHT RELEASED BY 19 AMP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIO NAL LOC ,19 RIG H TS DIST G RESERVED. 14 REVISIONS P F ZONE LTR N DESCRIPTIO N DATE REV / 0 7 2 0 - 0 9 5 3 - 9 6 18JUN96 D

Contextual Info: 4 DRAWING MADE IN THIRD ANGLE 3 PROJECTION THIS DRAWING IS UNROBE I SHED . C COPYRIGHT 19 REDEASED FOR ROBDI 0AT I ON AMP BY INCORPORATED. ALL 2 <3> , 19 INTERNATIONAL RIGHTS LOC Ah RESERVED. REV I 5IONS DI ST 50 P F LTR ZONE H DESCRIPTION DATE APPD 18JUN02 JR/ND

7812 1A

Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV 9 PLASTIC PLUNGER 6SX7-T DOCUMENT 0053519 CHANGED BY CHECK MBN 18JUN09 CM H PRODUCT CODE VDH0710 I88±.0I0 .I20±.0!0 DIA .090 MAX DIA MTG H O L E /T \ B 1 .32 O P E R A T IN G i — .030+.0I0 R B -.063 DIA m ~T

Contextual Info: FO-551I8-B 10 9 7 8 6 ^ 2 3 4 5 H O N E Y WE L L PART NUMBER 2PB1000 CHARACTERISTICS: REV DOCUMENT C 0066505 I CH A NG E D BY SSK 18JUN10 CHECK CMH IJ i/32-32 UNS THREAD TO WITHIN .0 9 4 OF SHOULDER .072 WIDE X .038 OPERATING FORCE: 1 1/2 LB APPROX BLACK PLASTIC PLUNGER

SI4431CDY

Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

SIHS36N50D

Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SQ4940EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.055 ID (A)

s0913

Contextual Info: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature