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    180N20 Search Results

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    180N20 Price and Stock

    Littelfuse Inc IXFH180N20X3

    MOSFET N-CH 200V 180A TO247
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    DigiKey IXFH180N20X3 Tube 542 1
    • 1 $12.65
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    RS IXFH180N20X3 Bulk 8 Weeks 30
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    Littelfuse Inc IXFT180N20X3HV

    MOSFET N-CH 200V 180A TO268HV
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    DigiKey IXFT180N20X3HV Tube 29 1
    • 1 $16.65
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    Newark IXFT180N20X3HV Bulk 300
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    RS IXFT180N20X3HV Bulk 8 Weeks 30
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    Littelfuse Inc IXFN180N20

    MOSFET N-CH 200V 180A SOT-227B
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    DigiKey IXFN180N20 Tube 300
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    RS IXFN180N20 Bulk 8 Weeks 10
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    IXYS Corporation IXFE180N20

    MOSFET N-CH 200V 158A SOT227B
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    DigiKey IXFE180N20 Tube 10
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    Mouser Electronics IXFE180N20
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    Infineon Technologies AG DD180N20SHPSA1

    DIODE MOD GP 2000V 226A BGPB34SB
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    DigiKey DD180N20SHPSA1 Tray
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    Rochester Electronics DD180N20SHPSA1 16 1
    • 1 $22.5
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    • 100 $21.15
    • 1000 $19.13
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    TME DD180N20SHPSA1 1
    • 1 $37.66
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    Find more 180N20 price and stock on Findchips.com

    180N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixfn 180n20

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200


    Original     		PDF 180N20 OT-227 ixfn 180n20

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200


    Original     		PDF 180N20 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 180N20 VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data Sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 180N20 728B1 123B1 728B1 065B1

    ixfn 180n20

    Abstract: 180n20
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200


    Original     		PDF 180N20 OT-227 E153432 ixfn 180n20 180n20

    180n20

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 180N20 VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data Sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 180N20 728B1 123B1 728B1 065B1 180n20

    ixfn 180n20

    Abstract: 180N20
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 180N20 OT-227 E153432 ixfn 180n20 180N20

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    IXFN180N20

    Abstract: No abstract text available
    Text: BIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 180N20 v DSS ^D25 P DS on *rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS Tj =25°Cto150°C 200 V VD0R Tj = 25° C to 150° C; RGS= 1 M ii


    OCR Scan     		PDF IXFN180N20 Cto150 OT-227 E153432 IXFN180N20

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET 180N20 V,DSS 200 D25 180 R,DS on t N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr V A 10 mQ 250 ns s Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C


    OCR Scan     		PDF IXFN180N20

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10