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    17MAR09 Search Results

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    0603-LED

    Abstract: No abstract text available
    Text: VLMS11P2Q2 Vishay Semiconductors Standard 0603 SMD LED 18562 DESCRIPTION The new 0603 LED series has been designed in the smallest SMD package. This innovative 0603 LED technology opens the way to • smaller products of higher performance • more design in flexibility


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    PDF VLMS11P2Q2 18-Jul-08 0603-LED

    e 1429

    Abstract: CVCO33CL-1394-1429
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1394 MHz 2.1 VDC 1429 MHz Tuning Voltage: 0.4 Supply Voltage: 2.85 3.0 3.15 VDC +2.5 5.0 dBm 15 mA Pushing: 2.0 MHz/V Pulling, all Phases:


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    PDF 10kHz 100kHz CVCO33CL-1394-1429 17-Mar-09 e 1429 CVCO33CL-1394-1429

    transistor 2440

    Abstract: CVCO55CC-2425-2440
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2425 MHz 4.7 VDC 2440 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +3.0 +5.0 +7.0 dBm 40 mA Supply Current:


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    PDF 10kHz 100kHz CVCO55CC CVCO55CC-2425-2440 17-Mar-09 transistor 2440 CVCO55CC-2425-2440

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: PA66 FLAMABILITY RATING: UL94-V0 COLOR: GREEN CONTACT PIN: BRASS CuZn SOLDER TAIL PLATING: TIN ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL CURRENT RATING:


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    PDF UL94-V0 300VAC 20-FEB-09 17-MAR-09

    Voltage Detector SOT-89 marking

    Abstract: No abstract text available
    Text: CAT808 Low-Power Precision Voltage Detector FEATURES DESCRIPTION „ Ultra Low Current Consumption 2.4µA The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0V and 3.5V are


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    PDF CAT808 TSOT-23 OT-89 CAT808 MD-3024 Voltage Detector SOT-89 marking

    CVCO55CC-0860-0960

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 860 MHz 4.5 VDC Lower Frequency: Upper Frequency: 960 Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC +3.0 +6.0 dBm 20 30 mA Output Power: Supply Current: nd MHz


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    PDF 10kHz 100kHz CVCO55CC CVCO55CC-0860-0960 17-Mar-09 CVCO55CC-0860-0960

    22C10

    Abstract: CAT22C10 CAT22C10LI20 CAT22C10LI30 CAT22C10LI
    Text: CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES • Single 5V Supply ■ Low CMOS Power Consumption: –Active: 40mA Max. –Standby: 30µA Max. ■ Fast RAM Access Times: –200ns 300ns ■ JEDEC Standard Pinouts: –18-lead DIP –16-lead SOIC ■ Infinite EEPROM to RAM Recall


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    PDF CAT22C10 256-Bit 200ns 300ns 18-lead 16-lead CAT22C10 MD-1082, 22C10 CAT22C10LI20 CAT22C10LI30 CAT22C10LI

    MOSFET 4407

    Abstract: 4407 4407 mosfet CIRCUIT 4407 AN609
    Text: Si7613DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF Si7613DN AN609, 17-Mar-09 MOSFET 4407 4407 4407 mosfet CIRCUIT 4407 AN609

    mar 617

    Abstract: mosfet 4414 AN609 Si8447DB
    Text: Si8447DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF Si8447DB AN609, 17-Mar-09 mar 617 mosfet 4414 AN609

    Untitled

    Abstract: No abstract text available
    Text: CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES • Single 5V Supply ■ Low CMOS Power Consumption: –Active: 40mA Max. –Standby: 30µA Max. ■ Fast RAM Access Times: –200ns 300ns ■ JEDEC Standard Pinouts: –18-lead DIP –16-lead SOIC ■ Infinite EEPROM to RAM Recall


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    PDF CAT22C10 256-Bit 200ns 300ns 18-lead 16-lead CAT22C10 MD-1082,

    Untitled

    Abstract: No abstract text available
    Text: VFB2028N Ultra-High-Precision Z-Foil Ball Grid Array BGA Surface-Mount Resistor 4R Network features • Temperature coefficient of resistance (TCR) – Absolute: ± 0.05 ppm/°C typical (0 °C to + 60 °C) – Tracking: 0.1 ppm/°C typical • Power coefficient of resistance (PCR) tracking (“∆R due to self heating”): 5 ppm at


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    PDF VFB2028N 17-Mar-09 VMN-PT0163-0903

    CVCO55CC-1515-1600

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 1515 MHz 10.0 VDC 5.0 5.25 VDC Lower Frequency: Upper Frequency: 1600 Tuning Voltage: 0.5 Supply Voltage: 4.75 Output Power: -3.0 MHz +3.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic :


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    PDF 10kHz 100kHz CVCO55CC CVCO55CC-1515-1600 17-Mar-09 CVCO55CC-1515-1600

    CVCO55CC-2275-2290

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2275 MHz 4.5 VDC 2290 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +4.5 +7.0 dBm 40 mA Supply Current:


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    PDF 10kHz 100kHz CVCO55CC CVCO55CC-2275-2290 17-Mar-09 CVCO55CC-2275-2290

    CAT808

    Abstract: CAT808NTDI-27GT3 CAT808NTDI-32GT3 CAT808NTFI-27-T1 MO-193 MD-3024
    Text: CAT808 Low-Power Precision Voltage Detector FEATURES DESCRIPTION „ Ultra Low Current Consumption 2.4 µA The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0 V and 3.5 V are


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    PDF CAT808 CAT808 MD-3024 CAT808NTDI-27GT3 CAT808NTDI-32GT3 CAT808NTFI-27-T1 MO-193

    AN609

    Abstract: 957-1000
    Text: Si7228DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF Si7228DN AN609, 17-Mar-09 AN609 957-1000

    MICROSMP DIODE

    Abstract: No abstract text available
    Text: New Product MSS1P2U & MSS1P3U Vishay General Semiconductor Ultra Low VF Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 0.68 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power


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    PDF J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 MICROSMP DIODE

    TIA-455-32

    Abstract: EIA-455 TIA-455-42A EIA-455-B TIA-455-3A GR-326-CORE EIA-455-13A EIA-455-13 EIA-455-4C
    Text: Design Objectives 108-2128 Rev O6 Non-Latching Refractive Plate Switch DESIGN OBJECTIVES The product described in this document has not been fully tested to ensure conformance to the requirements outlined below. Therefore Tyco Electronics makes no representation or warranty, express or implied, that the product will comply with these requirements. Further, Tyco


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    PDF TIA/EIA-455-20A. 17Mar09 TIA-455-32 EIA-455 TIA-455-42A EIA-455-B TIA-455-3A GR-326-CORE EIA-455-13A EIA-455-13 EIA-455-4C

    marking 15k

    Abstract: V0356 resistor 15k V0008
    Text: VFB2028N Vishay Foil Resistors Ultra High Precision Z-Foil BGA Surface Mount Resistor 4R Network, Temperature Coefficient Tracking 0.1 ppm/°C, Load Life Ratio Stability to ± 0.01 % 100 ppm , ESD Immunity to 25 kV FEATURES INTRODUCTION Bulk Metal Z-foil technology out-performs all other resistor


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    PDF VFB2028N VFB2028N 18-Jul-08 marking 15k V0356 resistor 15k V0008

    transistor 6822

    Abstract: transistors 6822 6822 transistor on 4409 on 4409 6822 equivalent 6822 transistor 4409 AN609
    Text: Si5456DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF Si5456DU AN609, 17-Mar-09 transistor 6822 transistors 6822 6822 transistor on 4409 on 4409 6822 equivalent 6822 transistor 4409 AN609

    CVCO33CL-1400-1500

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1400 MHz 4.7 VDC 1500 MHz Tuning Voltage: 0.3 Supply Voltage: 2.85 3.0 3.15 VDC Output Power: +3.0 +5.0 +7.0 dBm 8.0 15 mA Harmonic Suppression 2 Harmonic :


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    PDF 10kHz 100kHz CVCO33CL-1400-1500 17-Mar-09 CVCO33CL-1400-1500

    CVCO55CC-1845-1855

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1845 MHz 4.7 VDC 1855 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC +2.5 +5.0 dBm Output Power: Supply Current: 20 nd mA


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    PDF 10kHz 100kHz CVCO55CC CVCO55CC-1845-1855 17-Mar-09 CVCO55CC-1845-1855

    Untitled

    Abstract: No abstract text available
    Text: R E V IS IO N S TH IRD AN G LE PROJ. NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, GOLD PLATING(.000010 ” MIN.) CONTACT - BRASS, GOLD PU\TING(.000030” MIN.) INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE:


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    PDF 24-Mar-05 17-Mar-09 24-Mar-05 Mar-05 SMB1421A1 -316U 121421AAA36GM5F \DWG\SMB\1421 \316U-50\10GT30G-CSZ

    406372-5

    Abstract: Tyco RJ45 dual 406372-2 T568A T568B 40637 110 modular jack assembly BOWMAN amp T568A
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST HM 00 LTR DESCRIPTION D REV; EC 0B 4 0—0068-01 REV-EC O -07-000357 REV-ECO-08-031415 COLOR CODE 1 10 BLOCK


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    PDF REV-ECO-07-000357 REV-ECO-08-03K15 I2APR01 13APR07 17MAR09 T568A T568B 31MAR2000 406372-5 Tyco RJ45 dual 406372-2 40637 110 modular jack assembly BOWMAN amp T568A

    Untitled

    Abstract: No abstract text available
    Text: 4 TH IS DRAWING IS U N PU BLISH ED . 2 RELEASED FOR A LL COPYRIGHT PUBLICATIO N RIGH TS JU NE ,2 0 04 . REVISIO N S RESERVED. E 2004 LTR DATE DESCRIPTIO N REVI SED PER 3 1MAR ECO— 1 1- 0 0 5 0 3 3 DWN 11 A PV D RK HMR NOTES D /l \ SINGLE PACK IN ACCORDANCE WITH AMP S P E C


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    PDF 17MAR09