Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17805B_ E2G 0047-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 17805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17805B achieves high integration, high-speed operation, and low-power
|
OCR Scan
|
PDF
|
17805B_
152-Word
MSM5117805B
28-pin
cycles/32
|
m11t
Abstract: No abstract text available
Text: HB56UW 264DB-7B/8B Preliminary 2,097,152-Word x 64-Bit High Density Dynamic RAM Module HITACHI The H B56UW 264D B is a 2M x 64 dynamic R A M Sm all Outline Dual In-line Memory Module S.O .D IM M , mounted 8 pieces of 16-Mbit D R A M (HM 51W 17805BTT) sealed in T SO P package and
|
OCR Scan
|
PDF
|
HB56UW
264DB-7B/8B
152-Word
64-Bit
B56UW
16-Mbit
17805BTT)
24C02)
264DB
m11t
|
Untitled
Abstract: No abstract text available
Text: H B 56U W 264D B -6B L /7B L /8B L 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-523B Z Rev.2.0 Apr. 19,1996 Description The HB56UW 264DB is a 2M x 64 dynam ic RAM Sm all O utline Dual In-line M em ory M odule (S.O.DIMM), mounted 8 pieces of 16-Mbit DRAM (HM51W 17805BLTT) sealed in TSOP package and 1
|
OCR Scan
|
PDF
|
152-word
64-bit
ADE-203-523B
HB56UW
264DB
16-Mbit
HM51W
17805BLTT)
24C02)
HB56UW264DB
|
Untitled
Abstract: No abstract text available
Text: VG26 V (S)17805B 2,097,152 x 8-Bit CMOS Dynamic RAM V7SH Description The device is CMOS Dynamic RAM organized as 2,097,152 words x 8 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low
|
OCR Scan
|
PDF
|
17805B
28-pin
|
Sj70
Abstract: No abstract text available
Text: SIEMENS HYB 17805BSJ -50/-60/-70 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n • 2 0 9 7 152 w o rd s b y 8-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
|
OCR Scan
|
PDF
|
5117805BSJ-50/-60/-70
Sj70
|
17805P
Abstract: No abstract text available
Text: IBM0117805 IBM0117805M 17805B IBM0117805P 2 M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0117805
IBM0117805M
IBM0117805B
IBM0117805P
17805P
|
Untitled
Abstract: No abstract text available
Text: 17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi 17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17805B offers
|
OCR Scan
|
PDF
|
HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
|
Untitled
Abstract: No abstract text available
Text: H B 56U W 272E -6B /7B /8B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-519 A (Z) Preliminary - Rev. 0.1 May 22, 1996 Description The H B56U W 272E belongs to 8 Byte DIMM (Dual In-line M emory M odule) fam ily, and has been
|
OCR Scan
|
PDF
|
152-word
72-bit
168-pin
ADE-203-519
17805BTT)
16-bit
74LVT16244)
HB56UW
|
VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
|
OCR Scan
|
PDF
|
256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 2M x 72-Bit EDO-DRAM Module ECC-Module 168 pin buffered DIMM Module HYM 72V2005GS-50/-60 Advanced Inform ation • 168 pin JEDEC Standard, buffered 8 ByteDual In-Line M em ory Module for PC main m em ory applications • 1 bank 2M x 72 organization
|
OCR Scan
|
PDF
|
72-Bit
72V2005GS-50/-60
AE35I
|
DQ45D
Abstract: No abstract text available
Text: HB56UW272EJN-6B/7B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI ADE-203-586A Z Preliminary Rev. 0.1 May. 23,1996 Description The HB56UW 272EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
|
OCR Scan
|
PDF
|
HB56UW272EJN-6B/7B
152-word
72-bit
168-pin
ADE-203-586A
HB56UW
272EJN
16-Mbit
DQ45D
|
27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
|
OCR Scan
|
PDF
|
512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
|
MN4117400BSJ
Abstract: MN4117405BSJ MN4117405-BSJ 4117405BTT 4117400BTT 4117400b 4117405BSJ 4117405
Text: MOS Memories • Dynamic RAMs # 16M DRAM s 5V version Maximum Supply Current Organization Access time max (ns) Cycle time min (ns) Refresh (cycles/ms) M N4116400BTT 50/60/70 90/110/130 4096/64 80/70/60 - TSOP026-P-0300B M24 Fast page mode M N4117400BSJ 50/60/70
|
OCR Scan
|
PDF
|
N4116400BTT
N4117400BSJ
TSOP026-P-0300B
SOJ026-P-0300B
4117400BTT
4117405BSJ
4117405BTT
S0j026-P-0300B
MN4117400BSJ
MN4117405BSJ
MN4117405-BSJ
4117405BTT
4117400b
4117405
|
BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
|
OCR Scan
|
PDF
|
HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
|
|
|
64mb edo dram simm
Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt
|
OCR Scan
|
PDF
|
VQ264260BJ
4265BJ
264265BJ
17400CJ
17405CJ
174TGA
26418165BJGA
26418165BTGA
VE46417805BJGA
64mb edo dram simm
Dram 168 pin EDO 8Mx8
4Mx4 dram simm
|
Untitled
Abstract: No abstract text available
Text: HB56U W264EJN-6B/7B 2,097,152-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 BYTE DIMM HITACHI ADE-203-589 Z Preliminary - Rev. 0.0 May. 10, 1996 Description The H B56UW 264EJN belongs to 8 Byte DIMM (Dual In-line M emory Module) family, and has been
|
OCR Scan
|
PDF
|
HB56UW264EJN-6B/7B
152-word
64-bit
168-pin
ADE-203-589
HB56UW264EJN
56UW264EJN
16-Mbit
HM51W17805BJ)
24C02)
|
smd code marking yc 440
Abstract: siemens rw 152
Text: SIEMENS 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO 17805BJ/BSJ-50/-60 17805BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation
|
OCR Scan
|
PDF
|
HYB5117805BJ/BSJ-50/-60
HYB3117805BJ
HYB5117805
HYB3117805
117805B
P-SOJ-28-3
400mil)
PJ05699
P-SOJ-28-4
300mil)
smd code marking yc 440
siemens rw 152
|
D071521
Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
Text: SIEM EN S 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 17805BSJ -50/-60/-70 Prelim inary Information • • • 2 097 152 words by 8 -bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)
|
OCR Scan
|
PDF
|
5117805BSJ
A235bOS
5117805BSJ-50/-60/-70
I/01-I/08
fiE35bDS
0G71532
D071521
d0715
Q67100-Q1104
Q67100-Q1105
Q67100-Q1106
|
17805BTS-7
Abstract: No abstract text available
Text: 17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi 17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17805B offers
|
OCR Scan
|
PDF
|
HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
17805BTS-7
|
Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM 17805B-50/-60/-50L/-60 L CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu 17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The 17805B features a “hyper page” mode of operation whereby
|
OCR Scan
|
PDF
|
MB81V17805B-50/-60/-50L/-60
MB81V17805B
MB81V17805B
MB81V17805B-50/-60/-50L/-60L
28-pin
FPT-28P-M14)
|
Untitled
Abstract: No abstract text available
Text: HB56UW465EJN-6B/7B 4,194,304-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 BYTE DIMM HITACHI ADE-203-587 Z Preliminary Rev. 0.0 May. 10,1996 Description The HB56UW 465EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
|
OCR Scan
|
PDF
|
HB56UW465EJN-6B/7B
304-word
64-bit
168-pin
ADE-203-587
HB56UW
465EJN
16-Mbit
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 17805BSJ -50/-60/-70 Prelim inary Inform ation • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)
|
OCR Scan
|
PDF
|
5117805BSJ
5117805BSJ-50/-60/-70
23SbDS
DG71532
|
51W17805
Abstract: No abstract text available
Text: 17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi 17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17805B offers
|
OCR Scan
|
PDF
|
HM51W17805B
152-word
ADE-203-462B
28-pin
ns/70
51W17805
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Inform ation • 2 097 152 w ords by 32-bit organization • 1 m em ory bank • Fast access and cycle time 50 ns access time 84 ns cycle tim e -50 version 60 ns access time 104 ns cycle tim e (-60 version)
|
OCR Scan
|
PDF
|
32-Bit
322035S/GS-50/-60/-70
322035S/GS-50/-60/-70
|
