16MX32BIT Search Results

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

H55S5132DFR

Abstract: H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram H55S5122DFR
Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY5S7B2ALFP

Abstract: RA12
Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb 16Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

BC939

Abstract: aj17 cc 166 3p3 am2 1 10u 3p3 TP021 AMD ATHLON 64 X2 AM2 pin out Socket AM2 C51M rtl8111b 1U22 pmt R663
Contextual Info: 5 MSI 4 MS-16352 3 2 1 Ver:0A AMD S1 PROCESSOR 638-Pin uFCPGA 638 D UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR2 400 / 533 / 667 MHz 200-PIN DDR2 SODIMM UNBUFFERED DDR2 FAR SODIMM GDDR3 16MX32bit*4PCS 16 X 16 Bit D 9,10 200-PIN DDR2 SODIMM HyperTransport Link North Bridge

KMM53216004BK

Abstract: KMM53216004BKG
Contextual Info: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs

AS4C16M32MD1

Contextual Info: AS4C16M32MD1 512M 16M x32 bit Mobile DDR SDRAM Confidential (Rev. 1.0, July. /2014) LPDDR MEMORY 512M (16Mx32bit) Mobile DDR SDRAM Revision History Revision No 1.0 Description Initial Release Date 2014/07/18 AS4C16M32MD1 512M (16M x32 bit) LP Mobile DDR SDRAM

H55S512

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

CI-300

Abstract: MS-16382 c51p rtl8111b nvidia c51mv MAX8774GTL RN0402 MCP51M AMD ATHLON 64 X2 AM2 pin out Socket AM2
Contextual Info: 5 MSI 4 MS-16382 3 2 1 Ver:0B AMD S1 PROCESSOR 638-Pin uFCPGA 638 D UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR2 400 / 533 / 667 MHz 200-PIN DDR2 SODIMM UNBUFFERED DDR2 FAR SODIMM GDDR3 16MX32bit*4PCS 16 X 16 Bit D 9,10 200-PIN DDR2 SODIMM HyperTransport Link North Bridge

VSC8601

Abstract: VSX8601 MEPA 240KR1 MCP51M MAX8774GTL MS-16332 buf c043 R029 Socket AM2
Contextual Info: 5 MSI 4 MS-16332 3 2 1 Ver:0A AMD S1 PROCESSOR 638-Pin uFCPGA 638 D UNBUFFERED DDR2 NEAR SODIMM 9,10 DDR2 400 / 533 / 667 MHz 200-PIN DDR2 SODIMM UNBUFFERED DDR2 FAR SODIMM GDDR3 16MX32bit*4PCS 16 X 16 Bit D 9,10 200-PIN DDR2 SODIMM HyperTransport Link North Bridge

HY5S7B2A

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

ENE3910

Abstract: AM612 alc882 SMD D62 Socket AM2 Socket 754 "Socket 754" CMC 1039 RTL8101L 47K-0402
Contextual Info: 5 MSI 4 3 2 1 MS-1039 Ver:0A D D D D R 333/400 AMD K8 Socket 754 GDDR3 16MX32bit*4PCS Clock Generator 3~6 17 15~16 7 8 HT D D R SODIMM * 2 LCD LVDS C DVI TV OUT RGB 26 North Bridge PCIE ATI M56-P 32 NEW CARD PCI-E/USB PCI-E PCIE VGA 32 12~14 C ATI RX480

alc882

Abstract: LG-2413S-1 GDDR3 512MBITS CMC 1039 LG2413S LM358 121-1040 Socket AM2 Socket 754 "Socket 754"
Contextual Info: 5 MSI 4 3 2 1 MS-1039 Ver:0B D D DDR 333/400 AMD K8 Socket 754 GDDR3 16MX32bit*4PCS Clock Generator 3~6 17 15~16 7 8 HT DDR SODIMM * 2 LCD LVDS VGA 32 C DVI TV OUT RGB 26 North Bridge PCIE ATI M56-P 32 NEW CARD PCI-E/USB PCI-E PCIE 12~14 ATI RX480 LAN RTL8111B

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

M53216

Abstract: 16Mx32-bit
Contextual Info: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification

H5MS5122DFR

Abstract: H5MS5122DFR-J3M DDR333 DDR400 h5ms H5MS5132DFR
Contextual Info: 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb 16Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY5S7B2ALFP

Abstract: RA12 HY5S7B2A
Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

KMM53216000BK

Abstract: KMM53216000BKG
Contextual Info: DRAM MODULE KMM53216000BK/BKG KMM53216000BK/BKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs

HSD16M32D4

Abstract: HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12
Contextual Info: HANBit HSD16M32D4 Synchronous DRAM Module 64Mbyte 16Mx32-Bit , 100pin DIMM, 4Banks, 8K Ref., 3.3V Part No. HSD16M32D4 GENERAL DESCRIPTION The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.

Contextual Info: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

DAC335

Abstract: RE110 p10 LED display single color module schematic BTA 139 m932 schematic diagram of bluetooth headphone SYNCFLASH DAC3550A ISP1105W DB9 RS232 stereo JAck 2.5mm
Contextual Info: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. M9328MXLADSUM/D Rev 3 February 19, 2004 M9328MXLADS/A Application Development System User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com

PS3 computer motherboard circuit diagram

Abstract: Ps3 MOTHERBOARD CIRCUIT diagram MPC5200 gigabyte 865 MOTHERBOARD CIRCUIT diagram gigabyte 945 motherboard electrical diagram FX mode ethernet refernce design mea8 Micron 512MB NOR FLASH microprocessor bosch AC97
Contextual Info: Freescale Semiconductor Users Manual MPC5200 Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. MPC5200UG

KMM53216004BK

Abstract: KMM53216004BKG
Contextual Info: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

Contextual Info: Freescale Semiconductor Users Manual MPC5200 Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2005. All rights reserved. MPC5200UG