16AUG2007 Search Results
16AUG2007 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N963B
Abstract: MARKING 182 DO-35 zener diode IN 963 B zener diode
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1N957B 1N979B 1N979B DO-35 1N958B 1N959B 1N960B 1N961B 1N963B MARKING 182 DO-35 zener diode IN 963 B zener diode | |
Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted |
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BCW66G 500mA. OT-23 150degrees BCW66G | |
diode do35 C 4148
Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
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914/A/B 916/A/B LL-34 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A diode do35 C 4148 diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914 | |
Contextual Info: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage |
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FDC640P FDC640P NF073 | |
FDC633N marking conventionContextual Info: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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FDC633N NF073 FDC633N marking convention | |
MARKING 182 DO-35 zener diodeContextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200 |
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1N957B 1N979B 1N979B DO-35 1N958B 1N959B 1N960B 1N961B MARKING 182 DO-35 zener diode | |
transistor BC 458
Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
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BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor BC 458 BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor | |
20SSOP
Abstract: LCD Backlight Inverter Drive IC FAN7310 LCD Monitor Inverter
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FAN7310 30kHz 250kHz AN-4143: FAN7310) FAN7310G FAN7310GX 20SSOP LCD Backlight Inverter Drive IC FAN7310 LCD Monitor Inverter | |
Contextual Info: FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate |
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FDC699P FDC699P | |
4N29 APPLICATION NOTE
Abstract: optocoupler base resistor low voltage optocoupler ic 6-pin
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4N32M 4N29 APPLICATION NOTE optocoupler base resistor low voltage optocoupler ic 6-pin | |
1V5KEContextual Info: 1V5KE6V8 C A - 1V5KE440(C)A Transient Voltage Suppressors 1V5KE6V8(C)A - 1V5KE440(C)A Features • • • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. |
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1V5KE440 E210467. DO-201AE DO-201AE 1V5KE62A 1V5KE | |
marking 606
Abstract: diode marking EY
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FDC606P FDC606P NF073 marking 606 diode marking EY | |
2N 6517 TRANSISTOR
Abstract: 6517 transistor
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2N6517 625mW 2N6520 2N6515 2N6517 O-92-3 2N6517BU 2N6517CBU 2N6517CTA 2N 6517 TRANSISTOR 6517 transistor | |
Fairchild 4N32
Abstract: 4n29 optocoupler 4n33s fairchild
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E90700, P01101067 4N33300 4N33300W 4N333S 4N333SD 4N33M 4N33S 4N33SD 4N33W Fairchild 4N32 4n29 optocoupler 4n33s fairchild | |
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fdh400Contextual Info: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics. |
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FDH400 FDLL400 DO-35 LL-34 MMBD1401-1405 FDH/FDLL400 FDH400TR | |
Contextual Info: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value |
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BSR18B OT-23 BSR18B | |
Marking 638Contextual Info: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain |
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FDC638P FDC638P NF073 Marking 638 | |
BCW71 FAIRCHILD
Abstract: sot23 mark E coding
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BCW71 OT-23 BCW71 ND87Z BCW71 FAIRCHILD sot23 mark E coding | |
BF240
Abstract: BF240 CEB CEB npn DATE CODE FAIRCHILD
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BF240 25Budgetary BF240 ND74Z BF240 CEB CEB npn DATE CODE FAIRCHILD | |
BC182L
Abstract: IC DATE Code Identification bc 458 c 182l
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BC182L 100mA. BC182L IC DATE Code Identification bc 458 c 182l | |
55C 3V0 ZENER DIODE
Abstract: marking 5c diode zener diode 5C 3v3 5C diode bzx55c5v6 55C 6v8 ZENER DIODE Marking 5c 55C 3V9 ZENER DIODE 5C MARKING BZX55-C24
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BZX55C2V4 BZX55C56 BZX55C56 DO-35 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 55C 3V0 ZENER DIODE marking 5c diode zener diode 5C 3v3 5C diode bzx55c5v6 55C 6v8 ZENER DIODE Marking 5c 55C 3V9 ZENER DIODE 5C MARKING BZX55-C24 | |
2N5210Contextual Info: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol |
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2N5210/MMBT5210 OT-23 2N5210 O-92-3 2N5210BU 2N5210NMBU 2N5210TA 2N5210TAR 2N5210TF | |
APPLICATION OF BC548 transistor
Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
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BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 APPLICATION OF BC548 transistor Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input | |
CYN17
Abstract: 08-if
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CNY17X, CNY17FX, MOC810X CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CYN17 08-if |