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    Rochester Electronics LLC FDC633N

    MOSFET N-CH 30V 5.2A SUPERSOT6
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    onsemi FDC633N

    MOSFET N-CH 30V 5.2A SUPERSOT6
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    DigiKey FDC633N Digi-Reel 1
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    Quest Components FDC633N 636
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    onsemi FDC633N_F095

    MOSFET N-CH 30V 5.2A SUPERSOT6
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    Fairchild Semiconductor Corporation FDC633N

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    Bristol Electronics FDC633N 2,050 4
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    Quest Components FDC633N 2,313
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    FDC633N 2,192
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    FDC633N 1,640
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    FDC633N 1,517
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    FDC633N 1,044
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    Others FDC633N

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    FDC633N Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDC633N_F095 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.2A 6-SSOT Original PDF
    FDC633N_NF073 Fairchild Semiconductor 30V N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N_NL Fairchild Semiconductor 30V N-Channel Enhancement Mode Field Effect Transistor Original PDF

    FDC633N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDC633N marking convention

    Abstract: No abstract text available
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC633N NF073 FDC633N marking convention

    FDC633N

    Abstract: SOIC-16
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC633N OT-23 FDC633N SOIC-16

    FDC633N

    Abstract: SOIC-16
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC633N OT-23 FDC633N SOIC-16

    Q3 TRANSISTOR

    Abstract: FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC
    Text: XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out Schematic Vin 4.5V to 5.5V 0.22uF C1 C2 10uF IN D1 HSD BST Q1 FDC633N DH 0.1uF R1 680pF 130k 0.9V-1.8V/ 0.2A-1.8A 6.8uH APS Power LX Q2 COMP MAX1954 C6 DL To 5Vin 150uF C4 18mOhm FDC633N GND CL Load C5


    Original     		PDF FDC633N 680pF MAX1954 150uF 18mOhm MMBT3904 C0603C180M3GAC RLF7030-6R8M2R8 Q3 TRANSISTOR FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC

    FDC633N

    Abstract: SOIC-16
    Text: October 1997 PRELIMINARY FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDC633N OT-23 FDC633N SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate


    Original     		PDF FDC6327C

    Untitled

    Abstract: No abstract text available
    Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W


    Original     		PDF FDC5612

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
    Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		PDF FDC602P SSOT-6 CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527

    P-Channel MOSFET code L1A S

    Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v
    Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state


    Original     		PDF FDC6324L P-Channel MOSFET code L1A S CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v

    CBVK741B019

    Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
    Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.


    Original     		PDF MMPQ3906 SC70-6 SOIC-16 FFB3906 FMB3906 FMB3906 FFB3906 CBVK741B019 F63TNR FDG6302P MMPQ3906 SC70-6 SOIC-16 4977 gm

    FDC6331L

    Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
    Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		PDF FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR

    Supersot6

    Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
    Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5


    Original     		PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN

    SC70-6 SSOT6

    Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		PDF SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A

    CBVK741B019

    Abstract: F63TNR FDC3512 FDC633N
    Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDC3512 CBVK741B019 F63TNR FDC3512 FDC633N

    Untitled

    Abstract: No abstract text available
    Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.


    Original     		PDF Si3455DV

    Untitled

    Abstract: No abstract text available
    Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDC3512

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: 19-5250; Rev 1; 9/10 KIT ATION EVALU E L B AVAILA 12-Channel/8-Channel EEPROM-Programmable System Managers with Nonvolatile Fault Registers The MAX16047A/MAX16049A EEPROM-configurable system managers monitor, sequence, and track multiple system voltages. The MAX16047A manages up to twelve


    Original     		PDF 12-Channel/8-Channel MAX16047A/MAX16049A MAX16047A MAX16049A MAX16047A/MAX16049A

    FDC637AN

    Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV
    Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    Original     		PDF FDC637AN SI3446DV FDC637AN marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV

    CBVK741B019

    Abstract: F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16

    scw 52 transistor

    Abstract: No abstract text available
    Text: F /\IR G H II_ D March 1998 M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDC633N scw 52 transistor

    FDC633N

    Abstract: SOIC-16
    Text: FAIRCHILD ìm ic d n d u c t o M arch 1998 - r FDC633N N-Channel Enhancement Mode Field Effect Transistor Features General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF FDC633N OT-23 FDC633N SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H I L D M arch 1998 S E M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDC633N FDC633N

    Untitled

    Abstract: No abstract text available
    Text: June 1997 FAIRCHILD M IC O N D U C T O R m FDC633N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF FDC633N