3020 transistor
Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing
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MPM3002
MPM3012
3020 transistor
4707 N Channel MOSFETs
MPM3012
P channel MOSFET 10A schematic
P-channel MOSFET 100V, 10 Amps
p-channel power mosfet 14A
S 170 MOSFET TRANSISTOR
P-channel MOSFET 100V, 20 Amps
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3020 transistor
Abstract: P-channel MOSFET 100V, 10 Amps P-channel MOSFET 100V, 20 Amps
Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing
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MPM3002
MPM3012
3020 transistor
P-channel MOSFET 100V, 10 Amps
P-channel MOSFET 100V, 20 Amps
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P-channel MOSFET 100V, 10 Amps
Abstract: 3020 transistor 4707 N Channel MOSFETs P-channel MOSFET 100V, 20 Amps 150 amp H-bridge Mosfet MPM3002 MPM3012 MSK3020 drive motor 10A with transistor P channel MOSFET 100V H-bridge Mosfet
Text: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing
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MPM3002
MPM3012
P-channel MOSFET 100V, 10 Amps
3020 transistor
4707 N Channel MOSFETs
P-channel MOSFET 100V, 20 Amps
150 amp H-bridge Mosfet
MPM3012
MSK3020
drive motor 10A with transistor P channel MOSFET
100V H-bridge Mosfet
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3020 transistor
Abstract: P-channel MOSFET 100V, 20 Amps P-channel MOSFET 100V, 10 Amps 4707 N Channel MOSFETs drive motor 10A with transistor 14a 50v p-channel mosfet MPM3002 MPM3012 20 amp MOSFET transistor 100v P-Channel MOSFET
Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing
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MPM3002
MPM3012
3020 transistor
P-channel MOSFET 100V, 20 Amps
P-channel MOSFET 100V, 10 Amps
4707 N Channel MOSFETs
drive motor 10A with transistor
14a 50v p-channel mosfet
MPM3012
20 amp MOSFET transistor
100v P-Channel MOSFET
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3020 transistor
Abstract: No abstract text available
Text: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing
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MPM3002
MPM3012
3020 transistor
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IRFN9140
Abstract: No abstract text available
Text: SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 –100V –14A Ω 0.020Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN9140
220SM
300ms,
IRFN9140
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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IRFN9140SMD
Abstract: No abstract text available
Text: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN9140SMD
00A/ms
300ms,
IRFN9140SMD
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Untitled
Abstract: No abstract text available
Text: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN9140SMD
IRFN914"
IRFN9140SMD
IRFN9140SMD-JQR-B
O276AB)
1400pF
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2E12
Abstract: 2N7271D 2N7271H 2N7271R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 14A, 100V, RDS(on) = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM130
2N7271D,
2N7271R
2N7271H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
2N7271D
2N7271H
2N7271R
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14n05l
Abstract: FP14N05L RFD14N05LSM9A 14N05
Text: RFD14N05L, RFD14N05LSM, RFP14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD14N05L,
RFD14N05LSM,
RFP14N05L
AN7254
AN7260,
14n05l
FP14N05L
RFD14N05LSM9A
14N05
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14n05l
Abstract: 14N05LSM RFD14N05L
Text: is HARFRIS U U R F D 14N 0 5 L , R F D 14N 0 5 L S M , R F P 1 4 N 0 5 L. S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D EC TO-22QAB • 14A , 50V • ^DS{ON = 0.10012
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OCR Scan
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PDF
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O-22QAB
-251A
89e-3
13e-5)
1e-30
18a-4
53e-6)
45e-3
14n05l
14N05LSM
RFD14N05L
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14N05
Abstract: FT4N05 F14N05
Text: f f ï H A ^ 8 E“ ' R R RFD14N05, RFD14N05SM, RFP14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel
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RFD14N05,
RFD14N05SM,
RFP14N05
-220A
75e-5
84e-10
15e-1
21e-5)
1e-30
14N05
FT4N05
F14N05
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FP14N
Abstract: No abstract text available
Text: H A R f r is May 1991 R F D 1 4 N 5 R F P / 1 5 4 S N M 5 N-Channel Enhancement Mode Power Field Effect Transistors MegaFETs Packages Features T O -22 0 A B TOP VIEW • 14A, 50V • RDS(on) = ° - 1 fl DRAIN (FL A N G E ) • UIS SOA Rating Curve (Single Pulse)
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RFD14N05,
RFD14N05SM,
RFP14N05
FP14N
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30ym
Abstract: No abstract text available
Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 14A, 100V, RDS<on) - 0.180Q TQ-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM130
2N7271D,
2N7271R
2N7271H
TQ-204AA
300KRAD
3000KRAD
35MeV/mg/cm*
631UIS
FMI30PH0
30ym
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Untitled
Abstract: No abstract text available
Text: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q
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FRM130
2N7271U,
2N7271H
2N7271H
43D2271
GD4Sh72
100KRAD
300KRAD
1000KRAD
3000KRAD
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BU271
Abstract: TA9770
Text: BUZ71 intefeil Ju n e 1999 D ata S h e e t F ile N u m b e r 2 4 1 8 .2 Features 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET • 14A, 5 0V This is an N -Channel enhancem ent mode silicon gate power • rDS ON = 0.100S2 field effect transistor designed for applications such as
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BUZ71
100S2
TA9770.
BU271
TA9770
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12v transformer
Abstract: No abstract text available
Text: SI H A R R IS S E M I C O N D U C T O R FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features TO-204AA • 14A, 100V, RDS on = 0.180Q • Second Generation Rad Hard MOSFET Results From New Design Concepts
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PDF
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FRM130D,
FRM130R,
FRM130H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
AN-8831,
12v transformer
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ROA 500V
Abstract: tda 2200 FAP-450
Text: FU JI e iu M s u 'iJ t ìU K FAP-450 N-channel MOS-FET FAP-IIS Series 500V 14A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5 iE > Applications - Switching Regulators
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OCR Scan
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FAP-450
ROA 500V
tda 2200
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE FK14VS-9 • V d s s . 450V • rDS ON (MAX) .0 .6 5 Q • I D .14A
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FK14VS-9
150ns
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Tc = 25°C Ratings Unit V dss Symbol Drain-source voltage Parameter Vgs = OV 450 V V gss Gate-source voltage
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FK14UM-9
150ns
O-220
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1 R 10E 3C, diode
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q
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FK14SM-9
150ns
1 R 10E 3C, diode
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Untitled
Abstract: No abstract text available
Text: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package TO-204AA • 14A, 100V, RDS on = 0.180£i • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRM130D,
FRM130R,
FRM130H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
has45
O-204AA
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FS14SM16A
Abstract: FS14SM-16A
Text: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w q w e r V d s s . 8 0 0 V
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FS14SM-16A
FS14SM16A
FS14SM-16A
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