MIL-STD-750E
Abstract: STRH100N10 STRH100N10FSY1
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened
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STRH100N10
O-254AA
MIL-STD-750E
STRH100N10
STRH100N10FSY1
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ELECTRONIC BALLAST 150 W HID DIAGRAM
Abstract: CBB21 schematic diagram Electronic Ballast HID cbb21 capacitor schematic diagram of energy saving lamps 25 watts 70W hid ballast CL21 capacitor 400v ne555 SMD TDK CT101 L6385E
Text: AN2835 Application note 70 W HID lamp ballast based on the L6569, L6385E and L6562A Introduction This application note describes the electronic lamp ballast for 70 W high intensity discharge HID metal halide lamps (MHL) used for general indoor applications. The ballast is
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AN2835
L6569,
L6385E
L6562A
L6385E
L6569
ELECTRONIC BALLAST 150 W HID DIAGRAM
CBB21
schematic diagram Electronic Ballast HID
cbb21 capacitor
schematic diagram of energy saving lamps 25 watts
70W hid ballast
CL21 capacitor 400v
ne555 SMD
TDK CT101
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NAND512R3A2D
Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512R3A2D
NAND512W3A2D
NAND512W3A2
NI3087
t 0433 transistor
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Untitled
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened
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STRH100N10
O-254AA
SC30150
DocID17486
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STM4639
Abstract: No abstract text available
Text: SSG4639STM P-Ch Enhancement Mode Power MOSFET -14 A, -30 V, RDS ON 8.5 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). Rugged and reliable. Surface Mount Package. ESD Protected. SOP-8 B PRODUCT SUMMARY
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SSG4639STM
STM4639
13-May-2010
STM4639
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video decoder webcam circuit diagram
Abstract: RAW10 decoder webcam circuit diagram smia 65 camera module CAMERA SMIA STSMIA832 STSMIA832TBR CAMERA SMIA 85 SCHEMATIC webcam plane 1-21-74
Text: STSMIA832 1.8 V / 2.8 V high speed dual differential line receivers, standard mobile imaging architecture SMIA decoder deserializer Features • Sub-low voltage differential signaling inputs: VID = 100 mV min. with RT = 100 Ω, CL = 10 pF ■ High signaling rate:
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STSMIA832
TFBGA25
video decoder webcam circuit diagram
RAW10
decoder webcam circuit diagram
smia 65 camera module
CAMERA SMIA
STSMIA832
STSMIA832TBR
CAMERA SMIA 85
SCHEMATIC webcam plane
1-21-74
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC AD ALL RIGHTS RESERVED. BY - NOTCH DESIGNATES ROW A 27.0 D REVISIONS DIST 00 P LTR DESCRIPTION APVD 22MAR2014 AP DD B REVISED PER ECO-14-004985 12MAY2014 LAW DD 2 FINISH:
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ECO-14-004985
12MAY2014
UL94V-0
22MAR2014
ECO-14-002170
13MAY2010
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NAND512W3A2D
Abstract: NAND512R3A2D
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512W3A2D
NAND512R3A2D
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Doc ID 17486 Rev 7
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH100N10
O-254AA
STRH100N10HY1
STRH100N1
Doc ID 17486 Rev 7
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STRH100N10
Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened
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STRH100N10
O-254AA
STRH100y
STRH100N10
STRH100N
STRH100N10FSY1
MIL-STD-750E
DSASW003741
Doc ID 17486 Rev 4
STRH100N10FSY01
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Untitled
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened
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STRH100N10
O-254AA
SC30150
DocID17486
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a04l
Abstract: 45-21UMC B54L
Text: Technical Data Sheet Top View White LEDs 45-21UMC/XXXXXXX/TR8 Features ․Top View White LEDs ․Lead frame package with individual 2 pins ․Wide viewing angle ․Soldering methods: IR reflow soldering ․Pb-free ․The product itself will remain within RoHS compliant
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45-21UMC/XXXXXXX/TR8
45-21UMC/XX
DSE-0000098
13-May-2010
a04l
45-21UMC
B54L
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Untitled
Abstract: No abstract text available
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH100N10
O-254AA
STRH100N10HY1
STRH100N10HY01
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Untitled
Abstract: No abstract text available
Text: R DiePlus Advantage SiliconBlue January 25, 2011 2.0.6 Data Sheet DiePlus Advantage is SiliconBlue’s focused program to provide designers with an optimal device mounting solution for mobile handheld applications. This data sheet provides detailed information regarding DiePlus
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iCE65
iCE65L04
25-JAN-2011)
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74CB218ARTR
Abstract: 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: U-09-01 Last Buy Deadline for Submission of Order: 13-May-2009
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U-09-01
13-May-2009
13-May-2010
13-Aug-2010
DISCONTI74CB218R
MK74CB218RTR
MK74CB44R
MK74CB44RTR
MK74CG117BF
MK5818SLFTR
74CB218ARTR
7150MLF
1892YLF
MK1726-01SLFTR
1893bflf
5V551DCGI
MK9170
1522MLF PDN
MK9170-01CS08LF
343MPLFT
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Untitled
Abstract: No abstract text available
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened
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STRH100N10
O-254AA
O-254AA
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STRH100N10H
Abstract: vd 5205
Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH100N10
O-254AA
STRH100N10HY1
STRH100N1
STRH100N10H
vd 5205
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