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    STMicroelectronics STRH100N10HY1

    Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH100N10HY1)
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    STMicroelectronics STRH100N6HYG

    Rad-Hard N-channel 60 V 40 A Power MOSFET - Bulk (Alt: STRH100N6HYG)
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    STMicroelectronics STRH100N10HYG

    Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH100N10HYG)
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    STMicroelectronics STRH100N6HY1

    STMSTRH100N6HY1 (Alt: STRH100N6HY1)
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    STRH100N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		STRH100N6 O-254AA STRH100N6HY1 DocID18353 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		STRH100N6FSY3 O-254AA 100kRad 34Mev/cm PDF

    MIL-STD-750E

    Abstract: STRH100N10 STRH100N10FSY1
    Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened


    Original     		STRH100N10 O-254AA MIL-STD-750E STRH100N10 STRH100N10FSY1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		STRH100N10 O-254AA SC30150 DocID17486 PDF

    STRH100N10FSY3

    Abstract: STRH100N10FSY1
    Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		STRH100N10FSY3 O-254AA 100kRad 34Mev/cm STRH100N10FSY3 STRH100N10FSY1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		STRH100N6 O-254AA STRH100N6HY1 DocID18353 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original     		STRH100N6 O-254AA STRH100N6HY1 PDF

    am-008

    Abstract: MIL-STD-750E STRH100N6H
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


    Original     		STRH100N6 O-254AA STRH100N6HY1 STRH100N6HYG DocID18353 am-008 MIL-STD-750E STRH100N6H PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.012Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N6FSY3 60V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STRH100N6FSY3 O-254AA STRH100N6 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STRH100N10FSY3 O-254AA O-254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH100N6FSY3 O-254AA 100kRad 34Mev/cm PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH100N10FSY1 STRH100N10FSY3 O-254AA 34Mev/cm O-254AA PDF

    STRH100N10FSY1

    Abstract: STRH100N10FSY3 STRH100N10 JESD97
    Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH100N10FSY1 STRH100N10FSY3 O-254AA 34Mev/cm STRH100N10FSY1 STRH100N10FSY3 STRH100N10 JESD97 PDF

    1128 marking

    Abstract: JESD97
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm 1128 marking JESD97 PDF

    Doc ID 17486 Rev 7

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		STRH100N10 O-254AA STRH100N10HY1 STRH100N1 Doc ID 17486 Rev 7 PDF

    MIL-STD-750E

    Abstract: malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3
    Text: STRH100N6 N-channel 60 V, 0.012 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened


    Original     		STRH100N6 O-254AA STRH100N6FSY1y MIL-STD-750E malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3 PDF

    STRH100N10

    Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
    Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened


    Original     		STRH100N10 O-254AA STRH100y STRH100N10 STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01 PDF

    TC 2608

    Abstract: JESD97 STRH100N6FSY1
    Text: STRH100N6FSY1 STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N6FSY1 60 V STRH100N6FSY3 60 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH100N6FSY1 STRH100N6FSY3 O-254AA 34Mev/cm TC 2608 JESD97 STRH100N6FSY1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened


    Original     		STRH100N10 O-254AA SC30150 DocID17486 PDF

    st 72a

    Abstract: No abstract text available
    Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		STRH100N10FSY3 O-254AA 100kRad 34Mev/cm O-254AA st 72a PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		STRH100N10 O-254AA STRH100N10HY1 STRH100N10HY01 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite


    Original     		STRH100N6 O-254AA STRH100N6HY1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened


    Original     		STRH100N10 O-254AA O-254AA PDF

    STRH100N10H

    Abstract: vd 5205
    Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite


    Original     		STRH100N10 O-254AA STRH100N10HY1 STRH100N1 STRH100N10H vd 5205 PDF