NAND512W3A2S
Abstract: nand512r3a2s VFBGA63 NAND512W4A2S 70nM NUMonyx NAND NAND512W3A2
Text: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions Density – 512 Mbit: 4096 blocks Electronic signature – Manufacturer ID: x8 device: 20h
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NAND512W3A2S
nand512r3a2s
VFBGA63
NAND512W4A2S
70nM
NUMonyx NAND
NAND512W3A2
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ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
ULGA52
NAND08GW3B2C
ONFI nand flash
NAND04GW3B2DN6
NAND08G-B2C
NAND08GR3B4C
NAND08GW3B4C
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NAND512W3A2C
Abstract: No abstract text available
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
512-Mbit,
528-byte/264-word
512-Mbit
NAND512W3A2C
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NAND02GW3B2D
Abstract: NAND02GW3B2DN6 NAND02GR3B2D NAND02G-B2D NAND02GR4B2D bad block ONFI VFBGA63 NAND02GW3B2D-N
Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface
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NAND02G-B2D
2112-byte/1056-word
TSOP48
VFBGA63
VFBGA63
NAND02GW3B2D
NAND02GW3B2DN6
NAND02GR3B2D
NAND02G-B2D
NAND02GR4B2D
bad block
ONFI
NAND02GW3B2D-N
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NAND02GW3B2C
Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications
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NAND01G-B2B
NAND02G-B2C
2112-byte/1056-word
TSOP48
NAND02GW3B2C
VFBGA63
NAND01GW3B2B
VFBGA-63
block code error management, verilog
NAND01GR3B2B
NAND01Gr4B2B
NAND02GR4B2C
Numonyx
NAND01G-B2B
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NAND01GW3B2C
Abstract: NAND01GW3B2B nand01gw3b2cza6
Text: NAND01G-B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3.0 V ■ Page size
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NAND01G-B2C
2112-byte/1056-word
NAND01GW3B2C
NAND01GW3B2B
nand01gw3b2cza6
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C7478
Abstract: No abstract text available
Text: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2B
4224-byte
C7478
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NAND512R3A2D
Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512R3A2D
NAND512W3A2D
NAND512W3A2
NI3087
t 0433 transistor
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Untitled
Abstract: No abstract text available
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
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Untitled
Abstract: No abstract text available
Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities
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NAND01GR3B2C
NAND01GW3B2C
NAND01GR4B2C
NAND01GW4B2C
2112-byte/1056-word
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NAND08GW3F2A
Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
transistor sr61
NAND08GW3F
NAND16GW3F2A
A20-A32
transistor SR60
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NAND512W3A2D
Abstract: NAND512R3A2D
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512W3A2D
NAND512R3A2D
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NAND512W3A2S
Abstract: NAND512R4A2S NAND512W4A2S
Text: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions Density – 512 Mbit: 4096 blocks Electronic signature – Manufacturer ID: x8 device: 20h
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NAND512W3A2S
NAND512R4A2S
NAND512W4A2S
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NUMONYX DDR
Abstract: NAND16GW3D2B
Text: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications
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NAND16GW3D2B
16-Gbit,
4320-byte
NUMONYX DDR
NAND16GW3D2B
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NI3205
Abstract: NAND04GW3B2
Text: Numonyx NAND SLC large page 41 nm Discrete 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features – Cache read – Multiplane block erase • Density – 4 Gbit: 4096 blocks ■ NAND Flash interface – x8 or x16 bus width
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Byte/1056
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NI3205
NAND04GW3B2
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NAND04GB2D
Abstract: NAND04G-B2D
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
TSOP48
NAND04GB2D
NAND04G-B2D
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Untitled
Abstract: No abstract text available
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
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t 0433 transistor
Abstract: NAND512R3A2D
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
t 0433 transistor
NAND512R3A2D
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NAND08GW3F2A
Abstract: NAND08GW3F nand16gw3
Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage
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NAND08GW3F2A
NAND16GW3F2A
16-Gbit,
4224-byte
NAND08GW3F
nand16gw3
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NAND02GR3BAD
Abstract: BIT3102
Text: NAND02G-BxD 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface
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NAND02G-BxD
2112-byte/1056-word
VFBGA63
TSOP48
NAND02GR3BAD
BIT3102
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NAND512R3A2D
Abstract: NAND512W3A2D NAND512R3A NAND01GW3A2C
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Preliminary Data Features ● ● High density NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA55
NAND512R3A2D
NAND512W3A2D
NAND512R3A
NAND01GW3A2C
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NAND01GW3B2C
Abstract: NAND01GR3b2c nand01gw3b2cza6
Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities
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NAND01GR3B2C
NAND01GW3B2C
NAND01GR4B2C
NAND01GW4B2C
2112-byte/1056-word
nand01gw3b2cza6
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NAND02GR3B2D
Abstract: No abstract text available
Text: Numonyx NAND SLC large page 41 nm Discrete 2 and 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features • – Single and multiplane cache program – Cache read – Multiplane block erase Density – 2 Gbit: 2048 blocks ®
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NAND02GR3B2D
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NAND04
Abstract: A15-A23
Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area
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NAND04GW3C2B
NAND08GW3C2B
2112-byte
NAND04
A15-A23
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