13MAY02 Search Results
13MAY02 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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521-9214Contextual Info: TH IS DRAWING IS U N P U B LIS H E D . C COPYRIGHT R ELEASED FOR PUBLICATIO N BY TYCO ELECTRONICS CORPORATION. - - LOC R EVISIO N : D I5 T EH 00 A LL RIGHTS R E S E R V E D . LTR c D E SC R IPTIO N REV/EC —OB 10 —0 0 8 1 —02 DATE DWN APVD 13MAY02 |
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13MAY02 MAR20 521-9214 | |
M48T212V
Abstract: M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44
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M48T212Y M48T212V M48T212Y: M48T212V: 44-LEAD 44-pin M48T212V M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44 | |
M40Z300
Abstract: M40Z300W M4ZXX-BR00SH SOH28
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M40Z300 M40Z300W M40Z300: M40Z300W: M40Z300 M40Z300W M4ZXX-BR00SH SOH28 | |
SMPS CIRCUIT DIAGRAM 12v 5v
Abstract: flyback smps CMPD2836 Si4812DY Si9137 Si9137DB Si9137LG SSOP-28 5v pc smps pwm design SMPS CIRCUIT DIAGRAM for computers
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Si9137 300-kHz /30-mA 28-Pin Si9137 S-20642--Rev. 13-May-02 SMPS CIRCUIT DIAGRAM 12v 5v flyback smps CMPD2836 Si4812DY Si9137DB Si9137LG SSOP-28 5v pc smps pwm design SMPS CIRCUIT DIAGRAM for computers | |
"MARKING CODE L5"
Abstract: BAT60WS
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BAT60WS OD-323 OD-323 30K/box 100mA 13-May-02 "MARKING CODE L5" BAT60WS | |
Si8900EDBContextual Info: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B |
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275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-02077--Rev. 13-May-02 93-5224-x Si8900EDB | |
Si9169BQ-T1
Abstract: Si9169DQ-T1 TSSOP-20 Si9165 Si9169 si91
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Si9169 200-mA Si9169 S-20675--Rev. 13-May-02 Si9169BQ-T1 Si9169DQ-T1 TSSOP-20 Si9165 si91 | |
Contextual Info: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET |
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Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02 | |
s6 general semiconductor
Abstract: General Semiconductor diode marking s6 diode s6 650 General Semiconductor general semiconductor s6 GENERAL SEMICONDUCTOR MARKING s6 marking code DIODE d6 SD103CWS surge diode marking code d6 Vishay s6
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SD103AWS SD103CWS OD-323 SD103 200mA SD103AWS SD103BWS 13-May-02 s6 general semiconductor General Semiconductor diode marking s6 diode s6 650 General Semiconductor general semiconductor s6 GENERAL SEMICONDUCTOR MARKING s6 marking code DIODE d6 SD103CWS surge diode marking code d6 Vishay s6 | |
30V 200mA schottky barrier diode
Abstract: General Semiconductor minimelf diodes color ALL103A 10V Schottky Diode LL103A LL103B LL103C SD103A SD103AW
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LL103A LL103C LL103A, DO-35 SD103A, OD123 SD103AW 200mA, LL103A LL103B 30V 200mA schottky barrier diode General Semiconductor minimelf diodes color ALL103A 10V Schottky Diode LL103B LL103C SD103A SD103AW | |
Contextual Info: TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. r— CONTACT REV 1SIONS D I ST 47 p LTR W A A A A A v 0.76cm MI N GOLD OVER RELEASED PER OU1B- 0 15 8- 0 0 |
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Y2001 040CT200I I3JUN00 13MAY02 27jjm CK000 17MAR2000 | |
minimelf diodes color
Abstract: BAT41 equivalent glass diode color codes BAT41 LL41
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OD-80C) DO-35 BAT41. D1/10K 20K/box 200mA 13-May-02 minimelf diodes color BAT41 equivalent glass diode color codes BAT41 LL41 | |
M48T201V-85MH1FContextual Info: M48T201Y M48T201V 5.0 or 3.3V TIMEKEEPER Supervisor FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs YEAR 2000 COMPLIANT BATTERY LOW FLAG INTEGRATED REAL TIME CLOCK, POWERFAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL |
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M48T201Y M48T201V M48T201Y: M48T201V: 44-LEAD 85MH1E M48T201V-85MH1F M48T201V | |
Contextual Info: 1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g |
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1N4454 DO-204AH DO-35 150mA F2/10K 50K/box F3/10K 50K/box junct25 | |
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BAT85
Abstract: BAS85 DO-204AH
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BAT85 DO-204AH DO-35 BAS85. D7/10K 20K/box D8/10K BAT85 BAS85 DO-204AH | |
88109
Abstract: 1N4448 1N4448W IMBD4448 LL4448
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1N4448W 150mA OD-123 DO-35 1N4448, LL4448, OT-23 13-May-02 88109 1N4448 1N4448W IMBD4448 LL4448 | |
8p8c jack filter
Abstract: RJ45 8P8C
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-35dB 100MHz 13MAY02 8p8c jack filter RJ45 8P8C | |
Contextual Info: Si4724CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.0105 W @ VDD = 4.5 V |
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Si4724CY S-20628--Rev. 13-May-02 | |
Vishay Diode SOD-123
Abstract: 1N4150 1N4150W LL4150 marking code A4 Switching diode 50V 200mA
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1N4150W OD-123 OD-123 D3/10K 30K/box 200mA 13-May-02 Vishay Diode SOD-123 1N4150 1N4150W LL4150 marking code A4 Switching diode 50V 200mA | |
General Semiconductor
Abstract: SD101C SD101A SD101AW SD101CW DO-204AH LL101 LL101A LL101C
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SD101A SD101C LL101 OD-123 SD101AW SD101CW LL101A LL101C. DO-204AH DO-35 General Semiconductor SD101C DO-204AH LL101C | |
Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. REV 1SIONS D I ST 47 p LTR MI N GOL D OVER N T I N-LEAD MATERIAL: CONTACT O T Y :50 |
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27jjm 13MY2 I7MAR2000 | |
Contextual Info: TH 1 S DRAW 1NG C 1S U N P U B L 1SHED. C O P Y R I G H T 20 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L RIGHTS LOC RE S E RV E D. r— C O N T A C T AREA TYP I CA L U \r — r— AD \f — n |
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Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O P Y R I G H T 20 CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. REV 1SI ONS D I ST 47 p LTR D E S C R 1P T I O N RELEASED PER OU1B- 0 1 5 8 - 0 0 |
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1N4151
Abstract: 1N4151W LL4151 88107 general semiconductor
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1N4151W OD-123 DO-35 1N4151, LL4151. OD-123 13-May-02 1N4151 1N4151W LL4151 88107 general semiconductor |