s0913
Abstract: No abstract text available
Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Original
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Si4486EY
2002/95/EC
Si4486EY-T1-E3
Si4486EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s0913
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Original
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Si4484EY
2002/95/EC
Si4484EY-T1-E3
Si4484EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SI4850EY-t1g
Abstract: si4850
Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si4850EY
2002/95/EC
Si4850EY-T1-E3
Si4850EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4850EY-t1g
si4850
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PDF
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93c86vi
Abstract: 93C86V
Text: CAT93C86 Rev. C 16K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION High speed operation: 3 MHz Low power CMOS technology 1.8 to 5.5 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear
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Original
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CAT93C86
16K-Bit
CAT93C86
93c86vi
93C86V
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PDF
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Si9407AEY
Abstract: No abstract text available
Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si9407AEY
2002/95/EC
Si9407AEY-T1-E3
Si9407AEY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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irs26072
Abstract: PWM USING IC 555 TIMER dc motor control pwm 555 timer mosfet driver DC motor speed control using 555 timer and mosfet AN-1123 AN-978 JESD22-A114 JESD78 555 timer igbt driver DT04-4
Text: Data Sheet No. PD 97408A August 18, 2009 IRS26072DSPbF HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Integrated bootstrap diode suitable for Complimentary
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Original
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7408A
IRS26072DSPbF
IRS26072DSPBF
irs26072
PWM USING IC 555 TIMER dc motor control
pwm 555 timer mosfet driver
DC motor speed control using 555 timer and mosfet
AN-1123
AN-978
JESD22-A114
JESD78
555 timer igbt driver
DT04-4
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PDF
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SiE844DF-T1-E3
Abstract: SiE844DF-T1-GE3 SiE844DF
Text: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET
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Original
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SiE844DF
2002/95/EC
11-Mar-11
SiE844DF-T1-E3
SiE844DF-T1-GE3
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE818DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SI4470EY-T1-E3
Abstract: Si4470EY
Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Original
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Si4470EY
2002/95/EC
Si4470EY-T1-E3
Si4470EY-T1-GE3
18-Jul-08
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PDF
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SUM40N15-38
Abstract: SUM40N15-38-E3
Text: SUM40N15-38 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) • • • • • ID (A) 0.038 at VGS = 10 V 40 0.042 at VGS = 6 V 38 TrenchFET Power MOSFETs 175 °C Junction Temperature New Low Thermal Resistance Package
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Original
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SUM40N15-38
2002/95/EC
O-263
SUM40N15-38-E3
18-Jul-08
SUM40N15-38
SUM40N15-38-E3
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PDF
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Si9945AEY-T1-E3
Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A
Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si9945AEY
2002/95/EC
Si9945AEY-T1-E3
Si9945AEY-T1-GE3
18-Jul-08
SI9945
SI9945A
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE822DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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SI9945AEY-T1
Abstract: No abstract text available
Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si9945AEY
2002/95/EC
Si9945AEY-T1-E3
Si9945AEY-T1-GE3
11-Mar-11
SI9945AEY-T1
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE850DF
2002/95/EC
11-Mar-11
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE830DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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74485
Abstract: No abstract text available
Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE818DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
74485
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE860DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si4850EY
2002/95/EC
Si4850EY-T1-E3
Si4850EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE820DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling
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Original
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SiE820DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE860DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SiE802DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided
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Original
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SiE802DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE850DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiE802DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided
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Original
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SiE802DF
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling
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Original
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SiE800DF
2002/95/EC
11-Mar-11
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PDF
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