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    12W 98 TRANSISTOR Search Results

    12W 98 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12W 98 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE 12w

    Abstract: smd transistor marking 12W transistor SMD 12W 07N60C2 smd transistor code 12w smd transistor 12W 98 smd transistor 12w 12W SMD MARKING CODE 12W smd transistor smd transistor 12W 55
    Text: SPP07N60C2 SPB07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated R DS on 0.6 W · Extreme dv/dt rated


    Original     		PDF SPP07N60C2 SPB07N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4309 07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W 07N60C2 smd transistor code 12w smd transistor 12W 98 smd transistor 12w 12W SMD MARKING CODE 12W smd transistor smd transistor 12W 55

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original     		PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2

    SPI07N60S5

    Abstract: 07N60S5 SPPX3N60S5
    Text: SPI07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		PDF SPI07N60S5 SPPx3N60S5 P-TO262 07N60S5 Q67040-S4249 SPI07N60S5 07N60S5 SPPX3N60S5

    07N60S5

    Abstract: infineon 07n60s5 SPB07N60S5 SPP07N60S5
    Text: SPP07N60S5 SPB07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP07N60S5 SPB07N60S5 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 P-TO220-3-1 07N60S5 Q67040-S4172 P-TO263-3-2 07N60S5 infineon 07n60s5 SPB07N60S5

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5

    Q67040-S4186

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 P-TO251-3-1 P-TO252 07N60S5 Q67040-S4186

    ATC100B

    Abstract: MAPLST2122-090CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090CF 28VDC, -45dB 096MHz) 2110MHz) ATC100B MAPLST2122-090CF transistor f1

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		PDF MAPLST2122-090WF 28VDC, -45dB 096MHz) 2110MHz)

    07N60S5

    Abstract: 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172
    Text: SPI07N60S5 Preliminary data SPP07N60S5, SPB07N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original     		PDF SPI07N60S5 SPP07N60S5, SPB07N60S5 SPPx3N60S5/SPBx3N60S5 P-TO220-3-1 07N60S5 Q67040-S4172 P-TO263-3-2 07N60S5 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172

    Q67040-S4351

    Abstract: SPP06N80C2
    Text: Preliminary data SPP06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 900 mW · Extreme dv/dt rated


    Original     		PDF SPP06N80C2 P-TO220-3-1 Q67040-S4351 Q67040-S4351 SPP06N80C2

    smd transistor marking 12W

    Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98
    Text: Preliminary data SPD06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated


    Original     		PDF SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high f T S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the


    Original     		PDF IB3135MH75 IB3135MH75 IB3135MH75-REV-NC-DS-REV-A

    siemens automotive relay dc 12v

    Abstract: Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723
    Text: 18th Conference ‘Vehicle Electronics’ 16/17 June 1998, Munich Semiconductor technologies and switches for the new automotive electrical system Semiconductor Technologies and Switches for new Automotive Electrical Systems Dr. Alfons Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. +49 89/636-22805


    Original     		PDF 32-bit de/semiconductor/products/36/3673 HDT98E siemens automotive relay dc 12v Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567

    transistor smd 5DW 73

    Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
    Text: Qualifications Validated Annually QUALIFIED MANUFACTURERS LIST OF CUSTOM HYBRID MICROCIRCUITS QUALIFIED UNDER MILITARY SPECIFICATION MIL-PRF-38534 CUSTOM HYBRID MICROCIRCUITS QML-38534-29 30-Jun-99 SUPERSEDING QML-38534-28 31-Mar-99 CUSTOM HYBRID MICROCIRCUITS


    Original     		PDF MIL-PRF-38534 QML-38534-29 30-Jun-99 QML-38534-28 31-Mar-99 MIL-PRF-38534. 16-BIT, transistor smd 5DW 73 sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA

    ac DC supplies MEAN WELL schematic

    Abstract: schematic diagram 230VAC to 24VDC POWER SUPPLY WEIDMULLER EMA i-i led display schematic 4000 watt power UPS circuit diagram 3000 watt ups circuit diagram vde 0550 T1 schematic diagram UPS 200 watt Schematic Circuit Diagram CP SNT 300W isolation converter weidmuller
    Text: Power Supplies 214 Power Supplies Transformers and power supplies are important links in the supply of power to automation systems. They are the core of each and every switchgear cabinet. At the same time, a control voltage of 24V for the supply of all electrical components has


    Original     		PDF 50/60Hz ac DC supplies MEAN WELL schematic schematic diagram 230VAC to 24VDC POWER SUPPLY WEIDMULLER EMA i-i led display schematic 4000 watt power UPS circuit diagram 3000 watt ups circuit diagram vde 0550 T1 schematic diagram UPS 200 watt Schematic Circuit Diagram CP SNT 300W isolation converter weidmuller

    ICL8002G

    Abstract: BCR421U 100 watt 220v dimmer AN214 IC BCR420U PFC buck converter design pfc 12V Power Adapter pcb Easy Kit xc836 Ac 230v to Dc 12v led driver with pwm dimming 220V to 12V AC transformer 12w
    Text: Efficient Lighting Power Management & Control Solutions www.infineon.com/lighting Contents 2 Smart Fluorescent Ballast Controllers 4 DC/DC LED Driver 7 AC/DC Offline LED Driver 12 N-Channel MOSFETs 18 Microcontrollers 20 Automotive Lighting Solutions 22 LED Driver Online Design Tool


    Original     		PDF

    transistor BD 222 SMD

    Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
    Text: ACT337 Rev 2, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant voltage, constant current CV/CC regulation without the need of an opto-coupler or reference


    Original     		PDF ACT337 14-Nov-12 ACT337 transistor BD 222 SMD D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc

    Untitled

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LT3599 4-Channel 100mA LED Driver with 2% Current Matching DESCRIPTION FEATURES n n n n n n n n n n n n n n n Drives Four Strings of LEDs at Up to 100mA 2% Accurate LED Current Regulation Wide Input Voltage Range: 3V to 30V


    Original     		PDF LT3599 100mA 200kHz 16-Channel QFN-56 40VMAX) QFN-24 3599p

    NTE130

    Abstract: NTE199 NPN RF Amplifier NTE241
    Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)


    OCR Scan     		PDF 27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241

    Transistor 2n6099

    Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Transistor 2n6099 BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 300W TRANSISTOR AUDIO AMPLIFIER 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786

    RCA 528

    Abstract: 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 528 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029