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    12N60 EQUIVALENT Search Results

    12N60 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    12N60 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original     		G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB PDF

    Untitled

    Abstract: No abstract text available
    Text: [ /Title HGTP 12N60 C3R, HGT1 S12N6 0C3RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch HGTP12N60C3R, HGT1S12N60C3RS T UCT ROD RODUC P E P T E E OL UT


    Original     		GTP12 HGTP12N60C3R, HGT1S12N60C3RS 12N60 S12N6 PDF

    12N60 equivalent

    Abstract: 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer
    Text: 3VD499600YL 3VD499600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø 3 1 Advanced termination scheme to provide enhanced


    Original     		3VD499600YL 3VD499600YL O-220 12N60; 12N60 equivalent 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF