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    12N10 Search Results

    12N10 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJMG1V812N101ER Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,1G V/T with LEDs Visit Amphenol Communications Solutions
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    12N10 Price and Stock

    TDK Corporation MLZ2012N101LT000

    FIXED IND 100UH 140MA 3.5OHM SMD
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    DigiKey MLZ2012N101LT000 Reel 322,000 2,000
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    TME MLZ2012N101LT000 1,980 1
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    Avnet Abacus MLZ2012N101LT000 60,000 19 Weeks 2,000
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    Chip One Stop MLZ2012N101LT000 Cut Tape 7,122 0 Weeks, 1 Days 50
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    New Advantage Corporation MLZ2012N101LT000 80,000 1
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    Vyrian MLZ2012N101LT000 115,396
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    Win Source Electronics MLZ2012N101LT000 75,250
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    TDK Corporation MLZ2012N100LTD25

    FIXED IND 10UH 500MA 300MOHM SMD
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    DigiKey MLZ2012N100LTD25 Reel 46,000 2,000
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    Newark MLZ2012N100LTD25 Cut Tape 2,580 1
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    Bristol Electronics MLZ2012N100LTD25 1,000 23
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    TME MLZ2012N100LTD25 1,955 1
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    ComSIT USA MLZ2012N100LTD25 4,546
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    Avnet Abacus MLZ2012N100LTD25 19 Weeks 2,000
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    Susumu Co Ltd RG2012N-102-W-T1

    RES SMD 1K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-102-W-T1 Digi-Reel 11,388 1
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    RG2012N-102-W-T1 Cut Tape 11,388 1
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    RG2012N-102-W-T1 Reel 11,000 1,000
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    Novacap LS1812N102K302NTM

    CAP CER 1000PF 250V C0G 1812
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    DigiKey LS1812N102K302NTM Digi-Reel 9,501 1
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    LS1812N102K302NTM Cut Tape 9,501 1
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    LS1812N102K302NTM Reel 8,500 500
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    Component Electronics, Inc LS1812N102K302NTM 105
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    Master Electronics LS1812N102K302NTM 1,000
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    UMW 12N10

    MOSFET N-CH 100V 15A DPAK
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    DigiKey 12N10 Cut Tape 2,450 1
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    12N10 Digi-Reel 2,450 1
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    12N10 Reel 2,500
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    12N10 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N10L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N-10M Inmet ATTENUATOR Scan PDF
    12N10W-00 Inmet ATTENUATOR Scan PDF
    12N10W-00F Inmet ATTENUATOR Scan PDF
    12N10W-01 Inmet ATTENUATOR Scan PDF
    12N10W-01F Inmet ATTENUATOR Scan PDF
    12N10W-02 Inmet ATTENUATOR Scan PDF
    12N10W-02F Inmet ATTENUATOR Scan PDF
    12N10W-03 Inmet ATTENUATOR Scan PDF
    12N10W-03F Inmet ATTENUATOR Scan PDF
    12N10W-04 Inmet ATTENUATOR Scan PDF
    12N10W-04F Inmet ATTENUATOR Scan PDF
    12N10W-04M Inmet ATTENUATOR Scan PDF
    12N10W-06 Inmet ATTENUATOR Scan PDF
    12N10W-06F Inmet ATTENUATOR Scan PDF
    12N10W-06M Inmet ATTENUATOR Scan PDF

    12N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12N100A

    Abstract: 12n100 IXGH12N100 IXGH12N100A
    Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C


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    12N100 12N100A O-247AD Mounti00 IXGH12N100/A IXGH12N100U/AU1 12N100A 12n100 IXGH12N100 IXGH12N100A PDF

    10N100

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt


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    12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged


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    12N10 12N10 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T 12N10L-TN3-T 12N10G-TN3-T 12N10L-TN3-R 12N10G-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt


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    ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


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    ISOPLUS247TM 12N100Q 10N100Q 12N100S IXFR10N100 IXFR12N100 IXFH12N100Q 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


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    12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 PDF

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


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    30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh PDF

    D1488

    Abstract: D2523 12n100q mss1000 ld12a
    Text: EIIXYS HiPerFET Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt V DSS ^D25 R DS on = 1000 V = 12 A = 1.05 Q trr < 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C


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    12N100Q O-247AD 00A/ns O-247 D1488 D2523 mss1000 ld12a PDF

    1000 volt mosfet

    Abstract: SHD225613 SHD2258
    Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series


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    SHD225613 SHD2258 12N100 1000 volt mosfet SHD225613 SHD2258 PDF

    12n100q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C


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    12N100Q 12N100Q O-247 O-268 100ms PDF

    IXFH12N100Q

    Abstract: 10N100 6a diode 12N100Q IXFR12N100
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS on 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances


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    ISOPLUS247TM 12N100Q 10N100Q 12N100 10N100 10N1IS IXFR10N100 IXFH12N100Q 10N100 6a diode IXFR12N100 PDF

    12N10

    Abstract: Mosfet 12N10L 12N10L
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell


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    12N10 12N10 O-220 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T O-251 12N10L-TN3-R 12N10G-TN3-R Mosfet 12N10L 12N10L PDF

    12N100

    Abstract: No abstract text available
    Text: IGBT with Diode Low VCE sat High speed IXGA/12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C


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    IXGA/IXGP12N100U1 12N100AU1 O-220 O-263 12N100 PDF

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


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    10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a PDF

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C


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    12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1 PDF

    shd2258

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series


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    SHD2258 SHD225613 12N100 SHD225613 O-254 O-254 shd2258 PDF

    IXYS DS 145 12A

    Abstract: IXYS DS 145 LTS 543
    Text: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


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    O-247 12N100Q 12N100Q to150 IXYS DS 145 12A IXYS DS 145 LTS 543 PDF

    12N100Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q Class IXFH 12N100Q IXFT 12N100Q VDSS ID25 RDS on = 1000 V = 12 A = 1.05 W trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    O-247 O-268 12N100Q 12N100Q O-268 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol


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    10N100 12N100 PDF

    12N100L

    Abstract: IXTH12N100L
    Text: Power MOSFETs for Linear Operation IXTH 12N100L VDSS = 1000 V = 12 A ID25 RDS on = 1.3 Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    12N100L O-247 O-247 728B1 123B1 065B1 12N100L IXTH12N100L PDF

    IXGH12N100AU1

    Abstract: IXGH12N100U1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


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    12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1 PDF

    12N100F

    Abstract: No abstract text available
    Text: HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 12N100F VDSS IXFT 12N100F ID25 RDS on = 1000 V = 12 A = 1.05 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet TO-247 AD (IXFH)


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    12N100F O-247 728B1 PDF

    10N100F

    Abstract: 10n100 98934
    Text: VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS on 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt


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    ISOPLUS247TM 12N100F 10N100F IXFR10N100 IXFR12N100 728B1 10n100 98934 PDF

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ID25 RDS on 1000 V 1000 V 10 A 12 A 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V


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    10N100 12N100 O-247 O-204 PDF