12MM2 Search Results
12MM2 Price and Stock
APM HEXSEAL RM3X12MM-2701MACH SCREW PAN HEAD PHILLIPS M3 |
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RM3X12MM-2701 | Bulk | 4,192 | 1 |
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RM3X12MM-2701 | 3,786 |
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APM HEXSEAL SM3X12MM-2701MACH SCREW PAN SLOTTEDM3X0.5 |
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SM3X12MM-2701 | Bulk | 250 |
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SM3X12MM-2701 | 1,301 |
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APM HEXSEAL RM4X12MM-2701MACH SCREW PAN PHILLIPS M4X0.7 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RM4X12MM-2701 | Bulk | 250 |
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APM HEXSEAL RM2X12MM-2701MACH SCREW PAN HEAD PHILLIPS M2 |
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RM2X12MM-2701 | Bulk | 1 |
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APM HEXSEAL RM5X12MM-2701MACH SCREW PAN HEAD PHILLIPS M5 |
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RM5X12MM-2701 | Bulk |
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12MM2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PHOTODIODE 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12WB 450nm | |
Contextual Info: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12W 632nm | |
ODD-12WBContextual Info: PHOTODIODE: 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12WB 632nm 91site: ODD-12WB | |
ODD-12W
Abstract: 12W 60
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12mm2 ODD-12W 632nm ODD-12W 12W 60 | |
Contextual Info: PHOTODIODE 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C |
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12mm2 ODD-12W 632nm Newbur013 | |
Contextual Info: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C |
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12mm2 ODD-12W 632nm | |
Contextual Info: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C |
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12mm2 ODD-12W 632nm | |
ODD-12WBContextual Info: PHOTODIODE: 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12WB 450nm 91site: ODD-12WB | |
Contextual Info: PHOTODIODE 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12W 632nm | |
ODD-12WContextual Info: PHOTODIODE: 12mm2 ODD-12W FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12W 632nm 913om, ODD-12W | |
Contextual Info: PHOTODIODE 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C |
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12mm2 ODD-12WB 450nm | |
ODD-12WBContextual Info: PHOTODIODE: 12mm2 ODD-12WB FEATURES • TO-8 hermetic package • Circular active area • Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time |
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12mm2 ODD-12WB 632nm ODD-12WB | |
cell balancing
Abstract: LTC3625-1 LTC3625 balancing circuit for supercapacitor supercapacitor supercap charge
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12mm2 LTC3625 LTC3625-1, LTC3625/LTC3625-1 cell balancing LTC3625-1 LTC3625 balancing circuit for supercapacitor supercapacitor supercap charge | |
LTC4160-1Contextual Info: News Release ⎜ www.linear.com Switching Power Manager with USB On-The-Go & Overvoltage Protection in a Compact 12mm2 Footprint MILPITAS, CA – May 6, 2009 – Linear Technology Corporation announces the LTC4160 and LTC4160-1, the latest members in a family of power manager ICs for single-cell Li-Ion/Polymer |
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12mm2 LTC4160 LTC4160-1, LTC4160/-1 500mA LTC4160-1 | |
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XD 102 94V-0
Abstract: TDK Ferrite Core PC40 EE-25 200 6 transformer HT EE 19 transformer TDK H5C2 material TDK, TRANSFORMER, EPC19, pc40 core EE 25 transformer TDK Ferrite Core PC40 ei EE - 16 TRANSFORMER FEPC-17-A
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usPC40EEM12 PC50EEM12 100kHz, 200mT] 500kHz, 100kHz 500kHz 24Vdc XD 102 94V-0 TDK Ferrite Core PC40 EE-25 200 6 transformer HT EE 19 transformer TDK H5C2 material TDK, TRANSFORMER, EPC19, pc40 core EE 25 transformer TDK Ferrite Core PC40 ei EE - 16 TRANSFORMER FEPC-17-A | |
nir emitter leds with 700 to 900 nm
Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
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660nm ODD-660W nir emitter leds with 700 to 900 nm ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir | |
GBJ2005
Abstract: GBJ210 GB210 GBJ206
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GBJ2005 GB210 MIL-STD-202 300us GBJ210 GB210 GBJ206 | |
Contextual Info: MCC TM Micro Commercial Components Features • • • • • • RMB2S THRU RMB6S omponents 20736 Marilla Street Chatsworth !"# $ % !"# Surface Mount Package Glass Passivated Diode Construction |
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Contextual Info: KBP200 – KBP2010 W TE PO WE R SEM IC O ND UC TO R S 2.0A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards UL Recognized File # E157705 |
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KBP200 KBP2010 E157705 MIL-STD-202, | |
Contextual Info: MCC TM Micro Commercial Components Features • • • • Glass Passivated Die Construction High Surge Current Capabilit Case Material: Molded Plastic. Classification Rating 94V-0 Marking : type number 1.5 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts |
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KBP005M KBP10M KBP01M KBP02M KBP04M KBP06M KBP08M | |
Contextual Info: LM2757 Switched Capacitor Boost Regulator with High Impedance Output in Shutdown General Description Features The LM2757 is a constant frequency pre-regulated switchedcapacitor charge pump that operates at 1.25 MHz to produce a low-noise regulated output voltage. The device can be configured to provide up to 100 mA at 4.1V, 110 mA at 4.5V, or |
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LM2757 | |
KBP005MContextual Info: MCC TM Micro Commercial Components Features x x Glass Passivated Die Construction High Surge Current Capabilit x Case Material: Molded Plastic. Classification Rating 94V-0 Marking : type number UL Recognized File # E165989 x • KBP005M THRU KBP10M |
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KBP005M KBP10M E165989 -55qC 150qC 150qC KBP01M KBP02M | |
STPR320Contextual Info: STPR320 ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns FEATURES • ■ ■ ■ SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY |
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STPR320 DO-15 DO-15, STPR320 | |
Contextual Info: GBU6A – GBU6K WTE POWER SEMICONDUCTORS 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ! Glass Passivated Die Construction A ! ! ! ! Low Forward Voltage Drop D High Current Capability J High Reliability C High Surge Current Capability ! + ~ ~ Ideal for Printed Circuit Boards |
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E157705 |