Untitled
Abstract: No abstract text available
Text: KBP200 – KBP2010 W TE PO WE R SEM IC O ND UC TO R S 2.0A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards UL Recognized File # E157705
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KBP200
KBP2010
E157705
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: KBP200G – KBP2010G W TE PO WE R SEM IC O ND UC TO R S 2.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBP200G
KBP2010G
MIL-STD-202,
10uracies.
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200G
Abstract: 206G 208G KBP200G KBP2010G
Text: KBP200G – KBP2010G WTE POWER SEMICONDUCTORS Pb 2.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBP200G
KBP2010G
E157705
MIL-STD-202,
200G
206G
208G
KBP200G
KBP2010G
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Untitled
Abstract: No abstract text available
Text: KBP200 – KBP2010 2.0A SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBP200
KBP2010
E157705
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: KBP200G – KBP2010G 2.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability
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KBP200G
KBP2010G
E157705
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: KBP200PT CHENMKO ENTERPRISE CO.,LTD THRU SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 2.0 Amperes KBP2010PT FEATURES * Ideal for printed circuit board * Surge overload rating - 60 Amperes peak * Plastic material used carries Underwriters Laboratory
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KBP200PT
KBP2010PT
MIL-STD-19500
500Min.
300uS
100oC
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Untitled
Abstract: No abstract text available
Text: KBP200G – KBP2010G WTE POWER SEMICONDUCTORS Pb 2.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBP200G
KBP2010G
E157705
MIL-STD-202,
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KBP2010
Abstract: KBP200
Text: KBP200~KBP2010 SILICON BRIDGE RECTIFIERS VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic material used carries Underwriters Laboratory Recognition • Surge overload rating : 60 amperes peak • Exceeds environmental standards of MIL-STD-19500
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KBP200
KBP2010
MIL-STD-19500
2002/95/EC
MIL-STD-750
KBP2010
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Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package KBPM Package Weight mg 1700 Product Group Type No. KBP005M – KBP10M KBP150G – KBP1510G 2KBP005M – 2KBP10M KBP200G – KBP2010G Component Die Doped Silicon* Die Attach
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KBP005M
KBP10M
KBP150G
KBP1510G
2KBP005M
2KBP10M
KBP200G
KBP2010G
2011/65/EU.
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KBP201
Abstract: KBP2010 KBP200 KBP202 KBP204 KBP206 KBP208
Text: KBP200 – KBP2010 WTE POWER SEMICONDUCTORS Pb 2.0A SINGLE-PHASE BRIDGE RECTIFIER Features ! Diffused Junction ! Low Forward Voltage Drop A L ! High Current Capability ! High Reliability ! High Surge Current Capability J B ! Ideal for Printed Circuit Boards
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KBP200
KBP2010
E157705
MIL-STD-202,
14naccuracies.
KBP201
KBP2010
KBP200
KBP202
KBP204
KBP206
KBP208
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KBP200
Abstract: KBP201 KBP2010 KBP202 KBP204 KBP206 KBP208
Text: KBP200 – KBP2010 W TE PO WE R SEM IC O ND UC TO R S 2.0A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards UL Recognized File # E157705
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KBP200
KBP2010
E157705
MIL-STD-202,
KBP200
KBP201
KBP2010
KBP202
KBP204
KBP206
KBP208
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KBP206G
Abstract: KBP200G KBP2010G 200G 206G 208G 2010g
Text: KBP200G – KBP2010G W TE PO WE R SEM IC O ND UC TO R S 2.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBP200G
KBP2010G
MIL-STD-202,
KBP206G
KBP200G
KBP2010G
200G
206G
208G
2010g
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Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package KBP Package Weight mg 1700 Product Group Type No. KBP150 – KBP1510 KBP200 – KBP2010 Component Material Doped Silicon* Die Attach Solder Alloy Copper Alloy Plating Matte Tin
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KBP150
KBP1510
KBP200
KBP2010
2011/65/EU.
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kbp208g
Abstract: 200G 206G 208G KBP200G KBP2010G
Text: KBP200G – KBP2010G WTE POWER SEMICONDUCTORS Pb 2.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBP200G
KBP2010G
E157705
MIL-STD-202,
kbp208g
200G
206G
208G
KBP200G
KBP2010G
|
|
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Untitled
Abstract: No abstract text available
Text: KBP200G – KBP2010G WTE POWER SEMICONDUCTORS Pb 2.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction ! Low Forward Voltage Drop A L ! High Current Capability ! High Reliability ! High Surge Current Capability J
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KBP200G
KBP2010G
E157705
MIL-STD-202,
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FI 201 datasheet
Abstract: KBP 201 datasheet KBP200 KBP2010
Text: KBP200 – KBP2010 W TE PO WE R SEM IC O ND UC TO R S 2.0A BRIDGE RECTIFIER Features ! Diffused Junction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards UL Recognized File # E157705
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KBP200
KBP2010
E157705
MIL-STD-202,
FI 201 datasheet
KBP 201 datasheet
KBP200
KBP2010
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Untitled
Abstract: No abstract text available
Text: KBP200 – KBP2010 WTE POWER SEMICONDUCTORS Pb 2.0A SINGLE-PHASE BRIDGE RECTIFIER Features Diffused Junction Low Forward Voltage Drop A L High Current Capability High Reliability High Surge Current Capability J B Ideal for Printed Circuit Boards
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KBP200
KBP2010
E157705
MIL-STD-202,
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CTC0004
Abstract: KBP2005G KBP2010G
Text: Compact Technology KBP2005G thru KBP2010G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS KBP FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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KBP2005G
KBP2010G
2002/95/EC
118x45
CTC0004
KBP2010G
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SMD DIODE UF4007
Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Text: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and
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O-220,
O-220A
BZT52C2V4S
BZT52C51S
OD-323
BZX84C2V4W
BZX84C51W
OT-323
MMBZ5221BW
MMBZ5259BW
SMD DIODE UF4007
1N5819 SOD-323
1N4007 sod-123
1a7 sot-23
FR107 SOD-123
uf5408 SMD diode
Bosch alternator diode
bosch alternator
1N5822 SMD
1n5400 smd
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3KBP10
Abstract: E165989 SDB-205 2KBP005 mb5010w KBP3010G 3KBP06 RS405G
Text: MCC TM Micro Commercial Components BRIDGE RECTIFIERS MCC Part Number Working Peak Reverse Voltage VRWM V Average Forward Current @ Half-Wave Resistive Load 60Hz IO @ TL A °C Forward Peak Surge Current @ 8.3mS Superimposed IFSM A 50 100 200 400 600 800 1000
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MB05M
MB10M
E165989
DB101
DB102
DB103
DB104
DB105
DB106
DB107
3KBP10
E165989
SDB-205
2KBP005
mb5010w
KBP3010G
3KBP06
RS405G
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BRIDGE RECTIFIERS kbp 206
Abstract: KBP datasheet bridge rectifier 206 3 PHASE SILICON BRIDGE BRIDGE RECTIFIERS KBP200 KBP2010
Text: Silicon Bridge Rectifiers COMCHIP www.comchiptech.com KBP200 Thru 2010 Reverse Voltage: 50 - 1000 Volts Forward Current: 2.0 Amp KBP Features Diffused Junction Low Forward Voltage Drop KBP Dim Min Max 14.22 15.24 A 10.67 11.68 B 15.20 C 4.57 5.08 D 3.60 4.10
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KBP200
MIL-STD-202,
MDS0306002A
KBP2010)
BRIDGE RECTIFIERS kbp 206
KBP datasheet
bridge rectifier 206
3 PHASE SILICON BRIDGE
BRIDGE RECTIFIERS
KBP2010
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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2010-G
Abstract: KBP200-G KBPP200-G
Text: Silicon Bridge Rectifiers KBP200-G thru 2010-G RoHS Device Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Diffused Junction KBP A Low Forward Voltage Drop High Reliability B C + ~ ~ - High Current Capability High Surge Current Capability
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KBP200-G
2010-G
STD-202,
KBPP200-G
KBP2010-G)
2010-G
KBPP200-G
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KBP206G
Abstract: No abstract text available
Text: MCC 2 .0 AMPERE / KBP KBP2005G KBP201G KBP202G KBP204G KBP206G KBP208G KBP2010G Package Outline Pg. A-19 •SO 100 200 400 eoo 800 - . -1Q00 . 2.0 2.0 2.0 2.0 2.0 2.0 2.0 105 105 105 105 105 105 105 65 65 65 65 65 65 65
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OCR Scan
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KBP2005G
KBP201G
KBP202G
KBP204G
KBP206G
KBP208G
KBP2010G
-1Q00
PB305
PB310
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