Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1215N Search Results

    1215N Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LM2770SD-1215/NOPB Texas Instruments High Efficiency Switched Capacitor Step-Down DC/DC Regulator with Sleep Mode 10-WSON -30 to 105 Visit Texas Instruments Buy
    SF Impression Pixel

    1215N Price and Stock

    Littelfuse Inc ITV4030L1215NR

    FUSE BATTERY PROTECTOR 12V 15A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ITV4030L1215NR Digi-Reel 4,647 1
    • 1 $3.96
    • 10 $3.96
    • 100 $2.3915
    • 1000 $1.879
    • 10000 $1.879
    		Buy Now
    ITV4030L1215NR Cut Tape 4,647 1
    • 1 $3.96
    • 10 $3.96
    • 100 $2.3915
    • 1000 $1.879
    • 10000 $1.879
    		Buy Now
    Mouser Electronics ITV4030L1215NR
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.87
    		Get Quote
    Newark ITV4030L1215NR Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.05
    		Buy Now
    RS ITV4030L1215NR Bulk 8 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.9
    		Get Quote

    Bourns Inc CW201212-15NJ

    FIXED IND 15NH 600MA 80 MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CW201212-15NJ Digi-Reel 3,501 1
    • 1 $0.25
    • 10 $0.207
    • 100 $0.25
    • 1000 $0.13965
    • 10000 $0.13965
    		Buy Now
    CW201212-15NJ Cut Tape 3,501 1
    • 1 $0.25
    • 10 $0.207
    • 100 $0.25
    • 1000 $0.13965
    • 10000 $0.13965
    		Buy Now
    CW201212-15NJ Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11488
    		Buy Now
    Avnet Americas CW201212-15NJ Reel 12 Weeks 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.10383
    		Buy Now
    Mouser Electronics CW201212-15NJ 4,119
    • 1 $0.25
    • 10 $0.204
    • 100 $0.164
    • 1000 $0.14
    • 10000 $0.104
    		Buy Now
    Newark CW201212-15NJ Cut Tape 915 5
    • 1 $0.333
    • 10 $0.275
    • 100 $0.205
    • 1000 $0.205
    • 10000 $0.205
    		Buy Now
    Avnet Abacus CW201212-15NJ Reel 15 Weeks 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Master Electronics CW201212-15NJ
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.117
    		Buy Now

    Maxecho Technologies Corp HBWS2012-15NJ

    FIXED IND 15NH 600MA 80MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HBWS2012-15NJ Digi-Reel 1,980 1
    • 1 $0.15
    • 10 $0.114
    • 100 $0.0885
    • 1000 $0.06874
    • 10000 $0.06874
    		Buy Now

    Texas Instruments LM2770SD-1215-NOPB

    IC REG CHARGE PUMP PROG 10WSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LM2770SD-1215-NOPB Digi-Reel 1,967 1
    • 1 $1.06
    • 10 $0.765
    • 100 $0.6092
    • 1000 $0.54688
    • 10000 $0.54688
    		Buy Now
    LM2770SD-1215-NOPB Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.5276
    • 10000 $0.48489
    		Buy Now
    LM2770SD-1215-NOPB Cut Tape 967 1
    • 1 $1.06
    • 10 $0.765
    • 100 $0.6092
    • 1000 $0.54688
    • 10000 $0.54688
    		Buy Now

    Diwell Electronics MUS-1215N

    DC/DC CONVERTER INPUT: 12V OUTPU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MUS-1215N Tube 84 1
    • 1 $4.03
    • 10 $3.539
    • 100 $3.1108
    • 1000 $2.73413
    • 10000 $2.73413
    		Buy Now
    Find more 1215N price and stock on Findchips.com

    1215N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    WED8L24257V

    Abstract: DSP5630X
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X PDF

    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


    Original     		EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V, PDF

    WED8L24513V

    Abstract: No abstract text available
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


    Original     		EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V, PDF

    WED8L24258V

    Abstract: No abstract text available
    Text: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24258V 256Kx24 256Kx24 WED8L24258VxxBC 256Kx8 WED8L24258V DSP5630x WED8L24258V10BC WED8L24258V12BC WED8L24258V15BC PDF

    Untitled

    Abstract: No abstract text available
    Text: WED8L24514V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns


    Original     		WED8L24514V 512Kx24 512Kx24 WED8L24514VxxBC 512Kx8 WED8L24514V DSP5630x MO-163 WED8L24514V12BI WED8L24514V15BI PDF

    WED8L24513V

    Abstract: 2106XL
    Text: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs


    Original     		WED8L24513V 512Kx24 512Kx24 14mmx22mm MO-163) WED8L24513VxxBC 512Kx8 2106XL WED8L24513V PDF

    512kx8

    Abstract: No abstract text available
    Text: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single


    Original     		WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630xTM 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC 512kx8 PDF

    DSP5630x

    Abstract: p 602 EDI8L24129V
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


    Original     		EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V, DSP5630x p 602 EDI8L24129V PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V


    Original     		EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V, PDF

    DSP5630X

    Abstract: No abstract text available
    Text: EDI8L24257V Asynchronous, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The EDI8L24257VxxBC is a 3.3V, three megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24257V is


    Original     		EDI8L24257V 256Kx24 256Kx24 MO-163) DSP5630xT EDI8L24257VxxBC 256Kx8 EDI8L24257V DSP5630X PDF

    Untitled

    Abstract: No abstract text available
    Text: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630x 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC PDF

    IBJT

    Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
    Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,


    Original     		PDF

    7 k 3456

    Abstract: WED8L24513V
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL 7 k 3456 PDF

    IBJT

    Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
    Text: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but


    Original     		AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi­


    OCR Scan     		I8L24129V 128KX24 128Kx24 EDI8L24129\taBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L PDF

    intel 80368 Instruction set Architecture

    Abstract: i386 dx i386 DX-25 80286 microprocessor paging mechanism logical block diagram of 80286 386TM 230985 pkc 2111 i386dx CA 5210 PL
    Text: in te i Intel386 DX MICROPROCESSOR 32-BIT CHMOS MICROPROCESSOR WITH INTEGRATED MEMORY MANAGEMENT Flexible 32-Bit Microprocessor — 8, 16, 32-Bit Data Types — 8 General Purpose 32-Bit Registers Very Large Address Space — 4 Gigabyte Physical — 64 Terabyte Virtual


    OCR Scan     		Intel386â 32-BIT intel 80368 Instruction set Architecture i386 dx i386 DX-25 80286 microprocessor paging mechanism logical block diagram of 80286 386TM 230985 pkc 2111 i386dx CA 5210 PL PDF

    EDI88128CS45CB

    Abstract: as128Kx8 663D
    Text: EDI88128CS ^ E D l 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 72RfGtf Monotihic Hicfi Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 12,15r 17,2Q 25,35r 45r & 55ns TTie EDI88128CS is a high speect high performance


    OCR Scan     		EDI88128CS 12SKx8 128Kx8 EDI88128LPS) 72RfGtf EDI88128CS EDI88128C 663D1 EDI88128CS45CB as128Kx8 663D PDF

    TDK CE-0702

    Abstract: ce-0702 0505n CE-0703 0505-n 15p20 CE-0700 15N20 TDK ce series converter 1205P
    Text: 9 Power supplies DC to DC Converters DC to DC conve rters DC TO DC CONVERTERS Input voltage Edc: 5V, 4.5 to 5.5V and 4.5 to 16V SZC, CFK Single or multi-output and CHG series SZC SERIES FEATURES • On board, non isolation type DC to DC converter. SPECIFICATIONS


    OCR Scan     		12P25 15P20 SZC12N25 15N20 58x11 CE-0700 CE-0702 CE-0703 12x5x24 AVE-002 TDK CE-0702 0505n CE-0703 0505-n CE-0700 15N20 TDK ce series converter 1205P PDF

    DSP5630x

    Abstract: EDI8L24129V
    Text: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI8L24129V 128KX24 MO-163) DSP5630xâ EDI8L24129VxxBC 128Kx8 EDI8L24129V10BC EDI8L24128V12BC DSP5630x EDI8L24129V PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti­ Random Access Memory Array


    OCR Scan     		I8L24129V 128KX24 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V SP5630x EDI8L24129V15BI MO-163 PDF

    Untitled

    Abstract: No abstract text available
    Text: LA N H S e r i e s 1 W a t t SIP or to 1 W att DIP - LAN H S e r ie s F ea tures Up to One W att Output Power 10ODVDC Input/ Output Isolation Miniature Package Size Single and Dual Outputs Five Year Warranty T he LAN H S e r ie s fr o m W all I n d u s t r ie s


    OCR Scan     		10ODVDC 80TT0M PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI88130CS ^EDI 128Kx8 Monolithic Static Ram ELECTRONIC DESIGNS, INC Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory • The EDI88130CS is a high speed, high performance, Fast Access Times: monolithic Static RAM organized as 128Kx8 bits.


    OCR Scan     		EDI88130CS 128Kx8 EDI88130CS EDI88130LPS) 050Typ PDF