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    12 MHZ HLX Search Results

    12 MHZ HLX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD80C31BH/B Rochester Electronics LLC Microcontroller, 8-Bit, 12MHz, CMOS, CDIP40, DIP-40 Visit Rochester Electronics LLC Buy
    TP80C51FA Rochester Electronics LLC Microcontroller, 8-Bit, 12MHz, CMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy
    P8044AH-G-RC0117 Rochester Electronics LLC P8044 - Microcontroller, 8-Bit, MROM, 8051 CPU, 12MHz, CMOS Visit Rochester Electronics LLC Buy
    TP8044AH-RC0117 Rochester Electronics P8044 - Microcontroller, 8-Bit, MROM, 8051 CPU, 12MHz, CMOS Visit Rochester Electronics Buy
    P8044AH Rochester Electronics LLC Microcontroller, 8-Bit, MROM, 8051 CPU, 12MHz, CMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy

    12 MHZ HLX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HLXSR01608

    Abstract: No abstract text available
    Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit


    Original     		PDF HLXSR01608 HLXSR01608 16Mbit 150nm 110mW 40MHz

    Untitled

    Abstract: No abstract text available
    Text: HLXSR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns


    Original     		PDF HLXSR01632 1x10-12 5x10-12 150nm N40-1497-000-000

    HLX*8

    Abstract: HLX6228
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead HLX*8 HLX6228

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 30 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 Military & Space Products 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead 40-Lead

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 Packa2051.

    D-10

    Abstract: HLX6256 CDIP2-T28 nmos dynamic ram 6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 D-10 HLX6256 CDIP2-T28 nmos dynamic ram 6256

    hlx6256

    Abstract: D-10 nmos dynamic ram 6256 dynamic ram nmos 6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 hlx6256 D-10 nmos dynamic ram 6256 dynamic ram nmos 6256

    D-10

    Abstract: HLX6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 D-10 HLX6256

    E310A

    Abstract: HLX6228
    Text: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)


    Original     		PDF HLX6228 1x106 1x1014 1x109 1x1011 1x10-10 32-Lead E310A HLX6228

    honeywell SOI CMOS

    Abstract: HLX2000 Silicon on insulator SRAM HLX2015 HLX2060 HLX2120 HLX2240 HLX2450
    Text: RICMOS LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Supports System Speeds Beyond 50 MHz • Fabricated on Honeywell’s Radiation Hardened 0.55 µmLeff RICMOS™ IV SOI Process • Supports Chip Level Power Down for Cold Sparing


    Original     		PDF HLX2000 1x10-9 1x106 HLX2000 honeywell SOI CMOS Silicon on insulator SRAM HLX2015 HLX2060 HLX2120 HLX2240 HLX2450

    Untitled

    Abstract: No abstract text available
    Text: HLX6228 HLX6228 128K x 8 STATIC RAM—Low Power SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is


    Original     		PDF HLX6228 ADS-14207

    Untitled

    Abstract: No abstract text available
    Text: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage


    Original     		PDF HLX6256

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS M37735MHLXXXHP . ^ oVi î ? a,a^ So^ SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • In te r r u p ts .19 types, 7 levels T he M 37735M HLXXXHP is a single-chip m icrocom puter using the


    OCR Scan     		PDF M37735MHLXXXHP 16-BIT 37735M H-LF424-A KI-9605

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS M37735MHLXXXHP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • In te r r u p ts . 19 types, 7 levels The M 37735M HLXXXHP is a single-chip m icrocom puter using the


    OCR Scan     		PDF M37735MHLXXXHP 16-BIT 37735M 80P6D 80P6D. 80P6Q

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS M37733MHLXXXHP so'i«' ' SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • In te r r u p ts .19 types, 7 levels The M 37733M HLXXXHP is a single-chip m icrocom puter using the


    OCR Scan     		PDF M37733MHLXXXHP 16-BIT 37733M

    Transistors smd A7H

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x10erad 1x101 HLX6228 32-Lead Transistors smd A7H

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6228 1x106 1x101 1x109 0014flb 6C634

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6228 1x101 1x109 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HLX6408 5x10srad 1x101 1x109

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HLX6228 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6256 1x106ra 1x10l4 1x101 4551A72

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6256 1x109 28-Lead CDIP2-T28