11OCT04 Search Results
11OCT04 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ^ _ _ _ BY TYCO ELECTRONICS CORPORATION. - - DIST LOC ALL RIGHTS RESERVED. CE 16 R E V IS IO N S p LTR c DESCRIPTION REVISED PER 0 A 4 0 - 0 4 B 5 - 0 4 DATE DWN APVD 11OCT04 JW D JD |
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11OCT04 1310nm 31MAR2000 04APROO 04APRQQ | |
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. GP DIST R E V IS IO N S 00 LTR A 3. 125.06 [4.924] REF' DATE REVISED PER EC OS1 1 - 0 0 0 9 - 0 5 MATERIAL: HOUSING AND EJECTOR: HIGH TEMPERATURE NYLON |
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00064T 00102L 110CT04 23FEB95 | |
mosfet switch circuit diagram
Abstract: s41519rev
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Si6926AEDQ S-41519--Rev. 11-Oct-04 mosfet switch circuit diagram s41519rev | |
Contextual Info: Si6926AEDQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 Qg (Typ) ESD Protected 7.6 2000 V FEATURES |
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Si6926AEDQ 08-Apr-05 | |
Contextual Info: 194D Vishay Sprague Solid Tantalum Chip Capacitors MIDGET Conformal Coated FEATURES • 8mm, 12mm, 16mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3, 7” [178mm] standard. PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. |
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EIA-481-1 178mm] 50WVDC. RS-481. 11-Oct-04 | |
Contextual Info: 255D Vishay Sprague Organic Polymer, Low ESR, Tantalum Capacitors Commercial, Surface Mount Capacitors for Switch Mode Power Supplies and Converters FEATURES • Conductive polymer cathode technology • Low ESR • No-ignition failure mode • EIA standard case sizes |
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10WVDC 178mm] 330mm] EIA-481-1. 11-Oct-04 | |
Contextual Info: Si7220DN New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space of An SO-8 While |
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Si7220DN Si7220DN-T1--E3 S-41818--Rev. 11-Oct-04 | |
Si5404BDC-T1-E3
Abstract: SI5404BDC
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Si5404BDC Si5404BDC-T1--E3 S-41826--Rev. 11-Oct-04 Si5404BDC-T1-E3 | |
Si5404BDCContextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code |
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Si5404BDC Si5404BDC-T1--E3 08-Apr-05 | |
SQFP-48
Abstract: T6N 700 UCC5638
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SiP5638 15-Line UCC5638 SQFP-48 ULTRA-160) ULTRA-320) 08-Apr-05 T6N 700 UCC5638 | |
RISE3Contextual Info: WSZ Vishay Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power FEATURES ∑ Low cost, high power ∑ All welded construction ∑ Ceramic core ∑ Available on tape and reel STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING P25°C |
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E12/E241) TC-10. 80ppm/K2) 180ppm/K 50ppm/ 30ppm/ WSZ6720 WSZ7532 WSZ8027 GLOBAZ7532 RISE3 | |
Si5404BDCContextual Info: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code |
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Si5404BDC Si5404BDC-T1--E3 18-Jul-08 | |
MCT0603
Abstract: MCS 0402 AT - Precision
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11-Oct-04 MCT0603 MCS 0402 AT - Precision | |
SiP5678
Abstract: SQFP-48 UCC5638 T15N
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SiP5678 15-Line UCC5638 SQFP-48 ULTRA-160) ULTRA-320) S-41843--Rev. 11-Oct-04 UCC5638 T15N | |
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SiP5678
Abstract: SQFP-48 UCC5638
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SiP5678 15-Line UCC5638 SQFP-48 ULTRA-160) ULTRA-320) 18-Jul-08 UCC5638 | |
SQFP-48
Abstract: UCC5638 T5N 400
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SiP5638 15-Line UCC5638 SQFP-48 ULTRA-160) ULTRA-320) 18-Jul-08 UCC5638 T5N 400 | |
8409 diode
Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
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Si8409DB Si8401DB Si8409DB-T1--E1 08-Apr-05 8409 diode 8409 J-STD-020A S-41816 diode 8409 marking 8409 | |
T6N 700
Abstract: SQFP-48 UCC5628 t11N
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SiP5628 14-Line UCC5628 SQFP-48 ULTRA-160) ULTRA-320) 08-Apr-05 T6N 700 UCC5628 t11N | |
SQFP-48
Abstract: UCC5628
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SiP5628 14-Line UCC5628 SQFP-48 ULTRA-160) ULTRA-320) 18-Jul-08 UCC5628 | |
T12P
Abstract: SiP5668 SQFP-48 UCC5628
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SiP5668 14-Line UCC5628 SQFP-48 ULTRA-160) ULTRA-320) 08-Apr-05 T12P UCC5628 | |
diode 8409
Abstract: marking 8409 8409 diode
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Si8409DB Si8401DB Si8409DB-T1--E1 S-41816--Rev. 11-Oct-04 diode 8409 marking 8409 8409 diode | |
KDS 32kHZ crystal
Abstract: CRYSTAL 32.768KHz DATASHEET KDS KDS Crystals 32.768 KDS 70 Crystals quartz kds KDS oscillator KDS Crystals 8.192 kds 32.768 KDS Crystals KDS Crystals 32.768kHz
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M41T62, M41T63 M41T64, M41T65 350nA 400kHz) M41T63/64) M41T62/65) 32KHz M41T62/63/64) KDS 32kHZ crystal CRYSTAL 32.768KHz DATASHEET KDS KDS Crystals 32.768 KDS 70 Crystals quartz kds KDS oscillator KDS Crystals 8.192 kds 32.768 KDS Crystals KDS Crystals 32.768kHz | |
KDS 32kHZ crystal
Abstract: M41T63 M41T62 M41T64 M41T65 VSOJ20
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M41T62, M41T63 M41T64, M41T65 400kHz) 350nA QFN16 VSOJ20 32KHz KDS 32kHZ crystal M41T63 M41T62 M41T64 M41T65 VSOJ20 | |
top 8901
Abstract: SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A
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Si8901DB Si8901DB-T2--E3 S-41820--Rev. 11-Oct-04 top 8901 SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A |