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    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit

    PF38F4060M

    Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901

    WP1F

    Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C

    WP1F

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original
    PDF M18-90nm/65nm) 512-Mbit 16-bit x32SH x16SB x16/x32 8x10x1 PF48F3000M0Y0QE WP1F

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original
    PDF 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32

    PF38F4060M

    Abstract: PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A
    Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original
    PDF 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 PF38F4060M PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A

    PF38F4060

    Abstract: PF48F6000 strataflash 512 p30 PF38F4060M PF556 R305A PF48F6000M0Y1BE INTEL NAND FLASH MEMORY pf58f00 3093* intel
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 309823-009US PF38F4060 PF48F6000 strataflash 512 p30 PF38F4060M PF556 R305A PF48F6000M0Y1BE INTEL NAND FLASH MEMORY pf58f00 3093* intel

    PF38F5060M0Y0C0

    Abstract: strataflash 512mbit Migration Guide for Intel StrataFlash Memory J PF38F4060 PF38F5050M0Y0C0 3093* intel x16C PF38F4050M0Y0C0 SCSP M18
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 512-Mbit, 1-Gbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output


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    PDF 512-Mbit, 256-Mbit 16-bit ECR14 309823-005US PF38F5060M0Y0C0 strataflash 512mbit Migration Guide for Intel StrataFlash Memory J PF38F4060 PF38F5050M0Y0C0 3093* intel x16C PF38F4050M0Y0C0 SCSP M18

    fcBGA PACKAGE thermal resistance

    Abstract: 409-ball CERAMIC PIN GRID ARRAY wire lead frame lead frame pin grid array 30-PIN TSOP 48 stacked flash bonding TSOP 48 thermal resistance Sharp Packages SSOP MM1248 ebga 304
    Text: IC PACKAGE FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America


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    PDF

    S9026PL

    Abstract: Patch 18 dBi S9026 S2407HVP
    Text: I Data Patches Cushcraft Weatherized Patch Antennas for 2 .4 GHz, 5 .8 GHz, ISM Bands and Cellular Cushcraft patch antennas are available in several different configurations and are suitable for both indoor and outdoor applications. All our patches can be wall, ceiling or m ast m ounted. T h e se antennas are also


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    PDF 11x12x7/16 10x11x1 5x5x7/16 3x26x1 6x66x2 5x7/16 S9026PL Patch 18 dBi S9026 S2407HVP

    Untitled

    Abstract: No abstract text available
    Text: SONY CXD3220R IEEE1394 Link/Transaction Layer Controller LSI for SBP-2 Description The CXD3220R is a Link/Transaction Layer LSI conforming to the IEEE1394 serial bus standard. It is mainly used when connecting the IEEE1394 digital l/F to a storage device such as a hard disk,


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    PDF CXD3220R IEEE1394 CXD3220R 100/200Mbps 01OOxxxx 100Mbits/s 200Mbits/s

    Untitled

    Abstract: No abstract text available
    Text: IN TEG RATED TO SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT DATA TC9283F SILICON MONOLITHIC TENTATIVE DATA CD SINGLE-CHIP PROCESSOR The TC9283F is a sin gle chip processor fo r sync separation p ro te ctio n /sy n ch ro n iza tio n , EFM d e m o d u latio n , error


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    PDF TC9283F TC9283F FP100-P-1420