X16C Search Results

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

Contextual Info: August 2005 Rev - National Semiconductor Evaluation Board User's Guide 12-, 10- and 8-Bit General Purpose Analog-to-Digital Converters with Input Multiplexer ADC122S101 / ADC102S101 / ADC082S101 ADC122S051 / ADC102S051 / ADC082S051 ADC122S021 / ADC102S021 / ADC082S021

Contextual Info: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

ADC082S021

Abstract: ADC082S021CIMM ADC082S051 ADC082S101 ADC102S021 ADC102S051 ADC102S101 ADC122S021 ADC122S051 ADC122S101
Contextual Info: ADC082S021 2 Channel, 50 ksps to 200 ksps, 8-Bit A/D Converter General Description Features The ADC082S021 is a low-power, two-channel CMOS 8-bit analog-to-digital converter with a high-speed serial interface. Unlike the conventional practice of specifying performance at

Contextual Info: MN101C65C , MN101C65D Type MN101C65C under planning MN101C65D (under planning) ROM (x× 8-bit) 48 K 64 K RAM (×× 8-bit) 2K 2K Package QFP100-P-1818B *Lead-free (under planning), LQFP100-P-1414 *Lead-free (under planning) Minimum Instruction Execution Time

AB28F200B5B80

Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
Contextual Info: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time

V60N

Abstract: AIC1680N X60C V59C X60NP voltage level indicator marking SA sot-23-5 sot-23 MARKING GU U60C U59C
Contextual Info: AIC1680 Ultra Low Power Voltage Detector FEATURES DESCRIPTION Ultra-Low Quiescent Current. 1.5V to 10.0V Input Voltage Operation. Flexible Detection Voltage Setting 0.1V Step in the Range of 1.6V to 6.0V The AIC1680 is an accurate, ultra-low power High Detection Voltage Accuracy at ±2.5%.

R7D-AP08H

Abstract: R7D-AP04H R7M-A40030-S1 OMRON CQM1H-CPU51 INSTALLATION MANUAL CQM1-CPU43-V1 XW2B-20J6 R7DAP04H SBCE-011 R7D-AP01H R7A-CCA002P2
Contextual Info: Cat. No. I533-E1-01 USER’S MANUAL SMARTSTEP A SERIES MODELS R7M-A@ Servomotors R7D-AP@ (Servo Drivers) Servomotors/Servo Drivers Thank you for choosing this SMARTSTEP A-series product. Proper use and handling of the product will ensure proper product performance, will lengthen

Contextual Info: ADC082S021 www.ti.com SNAS282D – APRIL 2005 – REVISED MARCH 2013 ADC082S021 2 Channel, 50 ksps to 200 ksps, 8-Bit A/D Converter Check for Samples: ADC082S021 FEATURES DESCRIPTION • • • • The ADC082S021 is a low-power, two-channel CMOS 8-bit analog-to-digital converter with a highspeed serial interface. Unlike the conventional

PF38F4050L0ZTQ0

Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

Stacked 4MB NOR FLASH & SRAM with AD multiplexed

Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Contextual Info: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed

MN101C65C

Abstract: MN101C65D QFP100-P-1818B
Contextual Info: MN101C65C , MN101C65D Type MN101C65C under planning MN101C65D (under planning) ROM (x× 8-bit) 48 K 64 K RAM (×× 8-bit) 2K 2K Package QFP100-P-1818B *Pb free (under planning), LQFP100-P-1414 *Pb free (under planning) Minimum Instruction Execution Time

PF38F4060

Abstract: PF38F4060M SCSP M18 PF38F4050 PF38F4060M0y 3076* intel 3098* intel tba 790
Contextual Info: Intel StrataFlash Cellular Memory M18 SCSP 2048-Mbit M18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ „ Device Architecture — Flash Die Density: 256, 512 Mbit, or 1 Gbit — PSRAM Die Density: 64 or 128 Mbit — x16 Non-Mux or AD-Mux I/O Interface

XEL16V

Abstract: XEL16VB
Contextual Info: ENHANCED DIFFERENTIAL RECEIVER Micrel, Inc. FEATURES • ■ ■ ■ ■ ■ ■ ■ SY10EL16VA-VF SY100EL16VA-VF SY10EL16VA-VF SY100EL16VA-VF DESCRIPTION 3.3V and 5V power supply options 250ps propagation delay Very high voltage gain vs. standard EL16 or EL16V

AIC1680

Abstract: U59P v60n U60N v59p DS-1680-01 U59C 3.GND SOT-23-5 AIC1680N C16C
Contextual Info: AIC1680 Ultra Low Power Voltage Detector n FEATURES n DESCRIPTION l Ultra-Low Quiescent Current. The AIC1680 is an accurate, ultra-low power l 1.5V to 10.0V Input Voltage Operation. consumption voltage detector IC, fabricated with l Flexible Detection Voltage Setting

BA56 Series

Contextual Info: 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory SST34HF3244C SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Top Sector Protection

Contextual Info: ADC082S021 ADC082S021 2 Channel, 50 ksps to 200 ksps, 8-Bit A/D Converter Literature Number: SNAS282C ADC082S021 2 Channel, 50 ksps to 200 ksps, 8-Bit A/D Converter General Description Features The ADC082S021 is a low-power, two-channel CMOS 8-bit analog-to-digital converter with a high-speed serial interface.

555H

Abstract: BKX555H SST34HF3244C
Contextual Info: 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory SST34HF3244C SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Top Sector Protection

Contextual Info: M ic r o c h ip PIC16C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: PIC16C61 • PIC16C64A PIC16C62 • PIC16CR64 PIC16C62A • PIC16C65 PIC16CR62 • PIC16C65A PIC16C63 • PIC16CR65 PIC16CR63 • PIC16C66 PIC16C64 • PIC16C67 • Low-power, high-speed CMOS EPROM/ROM

555H

Abstract: BKX555H SST34HF3244C
Contextual Info: 32 Mbit Concurrent SuperFlash + 4 Mbit SRAM ComboMemory SST34HF3244C SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory EOL Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation

Contextual Info: PRODUCT PREVIEW in te l SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 SmartVoltage Technology — Smart 5 Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V Vrp Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

TMPR3903AF

Abstract: TC5118165 TOSHIBA Thyristor QFP208-P-2828-0 P10GD toshiba lcd nmp tvs 5v sy 6551 MIPS R3000A
Contextual Info: Preface Thank you for your new or continued patronage of Toshiba semiconductor products. This is the 1998 edition of the databook for the TMPR3903AF 32-bit TX System RISC microcontroller. This databook is written so as to be accessible to engineers who may be designing a Toshiba

AB28F400B5B80

Abstract: AB28F400B5B80 FLASH AB28F200B5B80 E28F004B5B60 AB28F800B5B80 20000H 28f800b5 AB28F800B5B90 28F004B5 28F200B5
Contextual Info: E PRELIMINARY 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 n n n n n n n SmartVoltage Technology  5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes  Increased Programming Throughput at 12 V VPP Very High-Performance Read