10JIS Search Results

Contextual Info: LC2M0S High-Speed 12-Bit ADC ANALOG DEVICES □ AD7672 FEATURES 12-Bit Resolution and Accuracy Fast Conversion Time AD7672XX03 - 3jts AD7672XX05 - 5|is AD7672XX10 - 10jis Unipolar or Bipolar Input Ranges Low Power: 110mW Fast Bus Access Times: 90ns Small, 0.3", 24-Pin Package and 28-Terminal

Contextual Info: S s? B U R R -BR O W N DAC7615 Serial Input, 12-Bit, Quad, Voltage Output DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • LOW POWER: 20mW • PROCESS CONTROL • UNIPOLAR OR BIPOLAR OPERATION • ATE PIN ELECTRONICS • SETTLING TIME: 10jis to 0.012%

Contextual Info: / T T SGS-THOMSON M29W004T A 7 # . [M»[g[LI gmMD(gS_ M29W004B 4 Mb (x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10jis typical

M28F256A

Contextual Info: SGS-mOMSON RíilD g[S [l[L[I(gTriS(0 R!lD(gi M28F256A CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200nA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10jis

HS5215

Contextual Info: SSDCX HS5210 SERIES * Corporation' SIGNAL PROCESSING EXCELLENCE 12-BIT ADJUSTMENT FREE ADCs FEATURES • ■ ■ ■ 12-bit conversion in 10jiS typ; 13^S max Adjustment-free. ±0.0125% linearity Low power: 670 mW typ W ide operating tem perature range: - 5 5 ° C to

SI931

Abstract: m29f040a
Contextual Info: _ M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jis typical ■ ERASE TIME - Block: 1.0 sec typical

Contextual Info: L IE BURR-BROlilN CORP D m 17313bS OOElObO TSb • IB U B BURR - BROW N ADS7808 ADVANCE INFORMATION SUBJECT TO CHANGE 12-Bit 10jis Serial CMOS Sampling ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • • • The ADS7808 is a complete 12-bit sampling A/D

m28f512-25

Contextual Info: M28F512 512 Kbit 64Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10jis typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5(iA typical

C7614

Contextual Info: B U R R -BR O W N DAC7614 w Serial Input, 12-Bit, Quad, Voltage Output DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • LOW POWER: 20mW • ATE PIN ELECTRONICS • UNIPOLAR OR BIPOLAR OPERATION • PROCESS CONTROL • SETTLING TIME: 10jis to 0.012% • CLOSED-LOOP SERVO-CONTROL

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson ADS7804 B U R R -B R O W N E 1 DEMO BOARD AVAILABLE See Appendix A 12-Bit 10jis Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • 100kHz min SAMPLING RATE The ADS7804 is a complete 12-bit sampling A/D

mm29f040

Contextual Info: SGS-THOMSON M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10jis typical ERASE TIME - Block: 1.0 sec typical - Chip: 2.5 sec typical

Contextual Info: SGS-THOMSON M29F102B [M D M [iL [iO T M O (§ S 1 Mb (x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10jis typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: I b ADS7820 I b www.burr-brown.com/databook/ADS7820.hIml H 12-Bit 10jis Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • • • • • • • The A D S 7820 is a complete 12-bit sampling A/D using state-of-the-art CMOS structures. It contains a

Contextual Info: SGS-THOMSON M29F002T * [Ä L [iO T M 0 § S 2 Mb (x8, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10jis typical PROGRAM/ERASE CONTROLLER (P/E.C.)

102119

Contextual Info: SGS-THOMSON [MD M[iL[iOTMO(§S M29F105B 1 Mb (x16, Block Erase SINGLE SUPPLY FLASH MEMORY PRELIM INARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10jis typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Applications Note U-137

Contextual Info: y UNITRODE UCC1776 UCC2776 UCC3776 PRELIMINARY Quad FET Driver FEATURES DESCRIPTION • High Peak Output Current Each Output - 1.5A Source, 2.0A Sink • W ide Operating Voltage Range 4.5V to 18V • Thermal Shutdown • CMOS Compatible Inputs • Outputs Are Active Low

Philips FA 261

Abstract: Microcontroller AT89S52 40 pin diagram TOP3 package WL 431 80C51 83L51FA 87L51FA 8XL51FA
Contextual Info: 711002b OObbll? ^47 H P H I N Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 3.0V 8-bit microcontroller DESCRIPTION FEATURES The 87L51 FA and 83L51 FA hereafter generically referred to as 8XL51FA Single-Chip 3.0V 8-Bit Microcontrollers are

AMD 28F512

Contextual Info: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current

Contextual Info: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling

Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

OD-820W

Abstract: OD820W OD-82QW
Contextual Info: OPTO DIODE CORP ssE j> m b flo m a oog oicio 2b3 m o?i> HIGH-SPEED GaAIAs IR EMITTERS OD-820W FEATURES • High reliability LPE grown GaAIAs • High power output • Fast response • Wide range of linear power output • Custom packages available • 100% test for minimum power requirement

op220 "direct replacement"

Abstract: LT1034 op220 AD707 LT1001 LT1012 LT1077 OP-07 OP-77
Contextual Info: r r TECHNOLOGY u r m _LT1Q77 Micropower, Single Supply, Precision Op Amp F€ATUA€S DCSCRIPTiOn • 60/iA Max Supply Current ■ 40/tV Max Offset Voltage ■ 350pA Max Offset Current ■ 0.5fiVp-p 0.1 Hz to 10Hz Voltage Noise ■ 2.5pAp-p 0.1 Hz to 10Hz Current Noise

Contextual Info: himMMS March 1994 HM 65788 DATA SHEET_ 16 K x 4 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME COMMERCIAL: 15/20/25/35/45 ns INDUSTRIAL/MILITARY : 20/25/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE : 267 mW typ STANDBY: 75 mW(typ)