1030MH Search Results

1030mhz

Abstract: 6610 KFF6384A
Contextual Info: Model KFF6384A Ceramic Monoblock Bandpass Filter WIRELESS COMPONENTS Features: • Small Size • High Performance • SMD Description and Applications: This monoblock filter is suitable for aeronautical radionavigation applications at 1030MHz, primarily

RFCR2304

Abstract: Circulator circulator 1080 MHz
Contextual Info: RFCR2304 RFCR2304 920MHz to 960MHz Single Junction Drop-In Circulator 1030MHz TO 1090MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1 in Features     Typical Insertion Loss Less than 0.25dB Isolation Greater than 23dB 1 200W Forward and Reverse

Contextual Info: 1030MHz SAW Filter 10MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT103001 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package �

1030MHz-1090MHz

Abstract: Avago 1090mhz signal Anaren anaren mixer 1030mhz airborn TriQuint radiall vco mimix
Contextual Info: Airborne Transponder/DMES Block Diagram: 1030MHz-1090MHz Transmitter PA PRE-DRIVER DRIVER Circulator Isolator H&S RADIALL Cables COUPLER Anaren M/A-COM FINAL Antenna M/A-COM RELL Avago M/A-COM Mimix Peregrine RELL Triquint FreescaleTM HVVi M/A-COM Microsemi

1030mhz

Contextual Info: JXWBDRO-T-1030-10 1030MHz DRO Test report is for reference only. TEST REPORT For JXWBDRO-T-1030-10 Page 1 JXWBDRO-T-1030-10 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

TA0690A

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 1030MHz MODEL NO.:TA0690A REV. NO.:3 A. MAXIMUM RATING:

MA04281

Abstract: 1030mhz ta0177a TA0177A Golledge 1030 mhz filter uk 1015
Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Ashwell Park, Ilminster Somerset, TA19 9DX, UK 1030MHz SAW Filter Part No: MA04281 Model: TA0177A REV NO.: 3 A. MAXIMUM RATING: 1.Input Power Level: 10 dBm 2.DC voltage: 0 V

Contextual Info: RFCR2304 RFCR2304 920MHz to 960MHz Single Junction Drop-In Circulator 1030MHz TO 1090MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1 in Features  Typical Insertion Loss Less than 0.25dB  Isolation Greater than 23dB  200W Forward and Reverse

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030mhz

Abstract: 1030 mhz 1030
Contextual Info: JXWBDRO-T-1030 1030MHz DRO Test report is for reference only. TEST REPORT for JXWBDRO-T-1030 Page 1 JXWBDRO-T-1030 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz

Contextual Info: Inverter Transformer SPECIFICATIONS TH TYPE Feature Low profile and small size Magnetically shielded Tray package Operating Temperature: -30 to +130 10% PRI Inductance:.205 SEC Inductance:.1030mH 10% PRI DCR :150.0m SEC DCR :530.0 PRI Coil SPC SEC Coil SPC :

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030mhz

Abstract: 1030
Contextual Info: JXWBDRO-T-1030 1030MHz DRO Test report is for reference only. TEST REPORT for JXWBDRO-T-1030 1 JXWBDRO-T-1030 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz DC Supply(V)

Contextual Info: Inverter Transformer SPECIFICATIONS TH TYPE Feature Low profile and small size Magnetically shielded Tape and reel package Operating Temperature: -30 to +130 PRI Inductance:.205 10% SEC Inductance:.1030mH 10% PRI DCR :150.0m SEC DCR :530.0 PRI Coil SPC SEC Coil SPC :

MA04281

Abstract: TA0177A Golledge 1030mhz
Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com 1030MHz SAW Filter Part No: MA04281 Model: TA0177A Rev No: 5 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC voltage: 0V

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date: Jun, 11, 2007

mode 5 IFF

Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

40ST1041S

Contextual Info: 40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER PN/:40ST1041S DATA SHEET A. GENERAL SPECIFICATIONS 1. 40-PIN SND PACKAGE COMPATIBL WITH BROADCOM, NS ,TMI,DAVICOM CHIPS. 2. DISIGNED FOR MULTIPORT REPEATER AND SWITCHED ERHERNET APPLICATIONS UTILIAING SINGLE RJ-45 CONNECTORS.

40ST1041M

Contextual Info: 40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER PN/:40ST1041M DATA SHEET A. GENERAL SPECIFICATIONS : 1. IEEE 802.3 ETHERNET COMPATIABLE, 100 BASE-TX. 2. SURFACE MOUNTABLE. 3. DESIGN FOR MULTIPORT REPEATER AND ETHERNET SWITCHING HUB APPLICATION 4. CUSTOMER DESGNS AVAILABLE FOR SPECIFIC APPLICATION.

35x45mm

Abstract: 6X6 mlp
Contextual Info: FIN212AC 12-Bit Serializer Deserializer with Multiple Frequency Ranges Features Description ƒ ƒ ƒ ƒ ƒ ƒ Low Power Consumption The FIN212AC µSerDes is a low-power serializer / deserializer optimized for use in cell phone displays and camera paths. The device reduces a 12-bit data path to

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7499010001A LAN-Übertrager WE-RJ45LAN 10/100BaseT LAN-Transformer WE-RJ45LAN 10/100BaseT DATUM / DATE : 2012-09-04 A Mechanische Abmessungen / dimensions :

Contextual Info: fax id: 3554 A £YPR p1122 CY2037 P R E LIM IN A R Y High Accuracy EPROM Programmable PLL Die for Crystal Oscillators Features Benefits EPROM-programmable die for in-package programming of crystal oscillators Enables quick turnaround of custom oscillators