transistor 2N4248
Abstract: 2N4248 2n4249
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage
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2N4248
2N4249
2N4250
2N4250A
O-106
VCB-40V
2N4250A
100yA
transistor 2N4248
2N4248
2n4249
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Untitled
Abstract: No abstract text available
Text: LED LIGHT BARS 5x10m m , 5x16m m , 5x22m m , 10x10m m , 10x16m m , 10x22mm LED PART NUMBER LED RADIATION COLOR ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C lr=100yA MAX Vf/LED X P If Iv mcd mA min/max typ/max nm NO OF LEDS PER LIGHT BAR 2SL200R6 ULTRA RED 20 2 0 .0 /1 0 0
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5x10m
5x16m
5x22m
10x10m
10x16m
10x22mm
100yA
2SL200R6
2SL200Y3
S423705
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CM500
Abstract: No abstract text available
Text: SLD-69BGC OPTOELECTRONIC CHARACTERISTICS 0 T=25°C Parameter Test Condition Short Circuit Current Symbol Min H*=25mw/cm^ 500 Ftc. ISC 50 Open Circuit Voltage H*=25mw/cm^ (500 Ftc.) VOC Dark Reverse Current VR=100mV XD Breakdown Voltage IR=100yA VBR Junction Capacitance
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SLD-69BGC
25mw/cm^
100mV
100yA
00raw/
SLCD-60-1328
Nov93l1
CM500
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TC57256AD-150
Abstract: No abstract text available
Text: 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY Id e s c r i p t i q n I The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri cally programmable read only memory. For read operation, the TC57256AD's access time
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TC57256AD
120ns,
30mA/8
100yA.
TD57256AD.
A9-12V
TC57256AD-12,
TC57256AD-150
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Untitled
Abstract: No abstract text available
Text: 8,192 W O R D X 8 B IT C M O S STA TIC R A M ¡d e s c r i p t i o n ] The TC5565APL/AFL is a 65,336 hit static random access m em ory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques
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TC5565APL/AFL
100ns/120ns/150ns.
100ns/div
TC5565APLâ
TC5565APL-12
TC5565APL-15
TC5565AFL-10
TC5565AFL-12
TC5565AFL-15
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Untitled
Abstract: No abstract text available
Text: iZ J L4972A L4972AD S G S -T H O M S O N 2A SWITCHING REGULATOR • ■ ■ . ■ ■ ■ . ■ ■ ■ ■ ■ ■ 2A OUTPUT CURRENT 5.1V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REG. INTERNAL CURRENT LIMITING PRECISE 5.1 V ± 2% ON CHIP REFERENCE
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L4972A
L4972AD
200KHz
L4972A
330pF
330uF
t191L49
50KHz
1-80UH
380UH
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29c51002
Abstract: No abstract text available
Text: M OSEL VITELIC V29C51002T/V29C51002B 2 MEGABIT 262,144x8-BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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V29C51002T/V29C51002B
144x8-BIT)
256Kx8-bit
100yA
29c51002
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MAX797
Abstract: No abstract text available
Text: JVÏÆXAJSA High-Accuracy Step-Down Controller 19-1175; RevO; 12/96 with Synchronous R ectifier for CPU Power The MAX798 has a logic-controlled and synchronizable fixed-frequency pulse-width-modulating PWM operating mode, which reduces noise and RF interference in sensi
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150kHz/300kHz
MAX798*
MAX797.
MAX796/MAX797/MAX799
MAX798
MAX797
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DE3005
Abstract: 1011S Matra-Harris
Text: european space agency agence spatiale européenne Pages 1 to 43 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 16K 16348 x 1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPES HM65262 AND HM65262B ESA/SCC Detail Specification No. 9301/018
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HM65262
HM65262B
DE3005
1011S
Matra-Harris
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2N65T
Abstract: 2N6515 CEB npn 10PA 20MHZ 2N6516 2N6517 2N6518 2N6519 2N6520
Text: 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP ♦I COMPLEMENTARY S IL IC O N HIGH VOLTAGE TRANSISTORS JED EC TO-92 CASE D ESC RIPTIO N The CENTRAL SEMICONDUCTOR 2N6515 N P N , p le m e n ta ry s i l i c o n t r a n s i s t o r s d e s ig n e d MAXIMUM RATINGS
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2N6515
2N6516
2N6517
2N6518
2N6519
2N6520
2N6515
2N65T
CEB npn
10PA
20MHZ
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2N6558
Abstract: 2N6557 2N6559
Text: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors
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2N6557
2N6558
2N6559
7j-202
20MHz
2N6558
2N6557
2N6559
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CSSD2003
Abstract: No abstract text available
Text: Data Sheet CSSD2003 f%oi6IH n t ri a r HI S em icon d u ctor Corp. SILIC O N SWITCHING DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION
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CSSD2003
DO-35
100yA
100mA
CSSD2003
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MPSA13
Abstract: MPSA12 MPSA14 mpsa13 central
Text: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors
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MPSA12
MPSA13
MPSA14
T0-92
MPSA12
MPSA14
MPSA13
mpsa13 central
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2N4058
Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '
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2N4058
2N4058)
2N4059,
2N4060,
2N4061,
2N4062)
2N3707
2N3711.
2N4058
100yA
2N4061
2N4062
2N4060
2N3711
2N4059
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D12D
Abstract: MIL-HDBK-217 250kf n-sb3
Text: B O ^ H L IN N OVA TION a n d E X C E L L E N C E UN S S E B I E S Single Output Non-lsolated, 3.3V and 5V 3 Amp, DC/DC Converters Features „ Lo w c o st, high e fficiency, w id e in p u t vo lta g e ran g e and lo w o u tp u t noise _ . d e fin e DATEUs ne w U N S S e rie s o f n o n -iso la te d , ste p -d o w n , s w itc h in g D C /D C
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50mVp-p.
0Q0403Ã
D12D
MIL-HDBK-217
250kf
n-sb3
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 - MAY 94_ FEATURES * 120 V olt VCE0 * 1 A m p continuous current * Gain o f 3K a t lc=1 Am p * Ptot=1 W att APPLICATIONS * Lamp, solenoid and relay drivers
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ZTX704
ZTX705
001G35S
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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5517N
Abstract: 295 da hen ne 5517AN
Text: N E 5517 /5 5 1 7A Dual Operational Transconductance Amplifier Product Specification DESCRIPTION FEATURES T h e N E 5 5 1 7 c o n t a in s t w o c u r r e n t- c o n • Constant impedance buffers • AVbe of buffer is constant with amplifier Ibias change
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NE5517
NE5517/5517A
5517N
295 da hen ne
5517AN
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification Hex D-type flip-flop with reset; positive edge-trigger 74LV174 FEATURES DESCRIPTION • Wide operating voltage: 1.0 to 5.5V The 74LV174 is a low-voitage Si-gate CMOS device and is pin and function compatible with the 74HC/HCT174.
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74LV174
74LV174
74HC/HCT174.
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Untitled
Abstract: No abstract text available
Text: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con sists of one 2N2222A NPN silicon transistor and one individual isolated complementary
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CMLT2207
2N2222A
2N2907A
OT-563
x10-4
OT-563
13-November
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Untitled
Abstract: No abstract text available
Text: C hicago M 1080 Johnson Drive Buffalo Grove, IL 60089 iniature 708-459-3400 Fax 708-459-2708 W HERE INNOVATION COM ES TO LIG H T T - 1 3/ 4 U l t r a b r i g h t L E D L a m p s D E S C R I P T I O N The Ultrabright CMD3X50 Series LED lamp provides exceptional brightness in a very narrow viewing area, in a
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CMD3X50
CMD3350
CMD3750
100yA)
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Untitled
Abstract: No abstract text available
Text: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 C h ic a g o M iniature L a m r In c . WHERE INNOVATION COMES TO LIGHT These rectangular LED lamps provide a 2 x 5 mm lighted surface area. ± M4 •07t _ J t m i Stackable in X or Y direction, these lamps are typically used as legend
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CMD53123
CMD54123
CMD57123
300pps)
100yA)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification 16-bit buffer/line driver; 3-State 74LVCH16541A FEATURES PIN CONFIGURATION • 5 volt tolerant inputs/outputs for interfacing with 5V togic • Wide supply voltage range of 1.2 V to 3.6 V • Complies with JEDEC standard no. 8-1A
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16-bit
74LVCH16541A
74LVCH16541A
74LVC
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Untitled
Abstract: No abstract text available
Text: t ,• üh. !:*t L72CB/1STA2 RIGHT ANGLE LED LAMP p DESCRIPTION L72CB/1STA is a right angle LED lamp that incorporates one clear transparent high efficiency red LED lamp • in a black plastic housing. c ,K ~ 0 .5 . W ô?T, 1 2.54, 0.5 0 . 02S _« \~ r
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L72CB/1STA2
L72CB/1STA
L72CB/1STA2-L
30inA
100yA
20iaA
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